Circuit for transistor level implementation scheme of five input end combination logical circuit

A combinational logic circuit, transistor-level technology, applied in logic circuits, logic circuits with logic functions, electrical components, etc., can solve the problems of large transmission delay, high circuit cost, large signal transmission delay, etc., and achieve the reduction of silicon chip area. , the effect of reducing the number of transistors

Inactive Publication Date: 2017-05-17
HEFEI HENGSHUO SEMICON CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Second, the signal transmission delay is large
The transmission delay from input to output is too large, and it will be fatal for circuits with high frequency, which are very concerned about the

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0016] Hereinafter, preferred embodiments of the present invention are given in conjunction with the drawings to illustrate the technical solutions of the present invention in detail.

[0017] Such as figure 1 As shown, the circuit of the transistor-level implementation scheme of the five-input combinational logic circuit of the present invention includes a first triode Q1, a second triode Q2, a third triode Q3, a fourth triode Q4, and a fifth triode. The transistor Q5, the sixth transistor Q6, the seventh transistor Q7, the eighth transistor Q8, the ninth transistor Q9, the thirteenth transistor Q10, the gate and the first transistor Q1 The gate of the six transistor Q6 is connected, the source of the first transistor Q1 is connected to the drain of the second transistor Q2, the gate of the second transistor Q2 and the gate of the seventh transistor Q7 are connected Connected, the source of the second transistor Q2 is connected to the drain of the third transistor Q3, the gate of

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a circuit for a transistor level implementation scheme of a five input end combination logical circuit. The circuit comprises a first triode, a second triode, a third triode, a fourth triode, a fifth triode, a sixth triode, a seventh triode and the like, a grid electrode of the first triode is connected with a grid electrode of the sixth triode, a source electrode of the first triode is connected with a drain electrode of the second triode, a grid electrode of the second triode is connected with a grid electrode of the seventh triode, a source electrode of the second triode is connected with a drain electrode of the third triode, a grid electrode of the third triode is connected with a grid electrode of an eighth triode, a grid electrode of the fourth triode is connected with a grid electrode of a ninth triode, a source electrode of the fourth triode is connected with a drain electrode of the fifth triode, and a grid electrode of the fifth triode is connected with a grid electrode of a thirteenth triode. Accordingly, the number of transistors is reduced, the purpose of reducing the number of the transistors is achieved, and finally the purpose of greatly reducing the silicon area occupied by the same logical function is achieved.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Owner HEFEI HENGSHUO SEMICON CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products