388 results about "Electrode" patented technology

An electrode device is for microwave coagulation therapy disclosed in which the direction of its electrode tip can be controlled by operation in its proximal region. The device comprises: a handpiece provided with a rigid hollow support shaft extending toward a distal end, a movable support provided at the distal end of the support shaft and carrying thereon an electrode, a coaxial cable which is connected at its proximal end to a coaxial connector and extending through the support shaft and connected in the movable support to the electrode, wherein: (a) the movable support comprises one or more links each surrounding the coaxial cable and longitudinally connected to the distal end of the support shaft so that the movable support can be bent and stretched in a single plane, and (b) the electrode device comprises a resilient stiff member fixed at one of its end to the deflection side of the most distal one of the links composing the movable support and extending through the support shaft and so connected at its proximal end to a control section of the handpiece that the resilient stiff member can be pulled and pushed back at the proximal end of the handpiece.

A display apparatus including a light emitting diode part including a plurality of regularly arranged light emitting diodes, and a TFT panel part configured to drive the light emitting diode part. The light emitting diode part includes a transparent electrode, the light emitting diodes regularly disposed on a first surface of the transparent electrode and electrically connected to the transparent electrode, a plurality of first reflective electrodes disposed at sides of the light emitting diodes, surrounding the light emitting diodes, and electrically connected to the transparent electrode, and a plurality of second reflective electrodes electrically connected to the light emitting diodes, respectively, and reflecting light emitted from the light emitting diodes.

An upper electrode is formed on one surface of a semiconductor multilayer structure including a light emitting layer. An interface electrode is formed at a region of another surface of the semiconductor multilayer structure except a region right under the upper electrode. A center of the interface electrode coincides with a center of the upper electrode. At least a part of the interface electrode has a similar shape to a shape of an outer periphery of the upper electrode. A current blocking layer is formed at another region of another surface of the semiconductor multilayer structure except the region where the interface electrode is formed. A reflecting layer for reflecting a part of the light emitted from the light emitting layer is electrically connected to the interface electrode. A conductive supporting substrate is electrically connected to the semiconductor multilayer structure.

A technique of manufacturing a display device with high productivity is provided. In addition, a high-definition display device with high color purity is provided. By adjusting the optical path length between an electrode having a reflective property and a light-emitting layer by the central wavelength of a wavelength range of light passing through a color filter layer, the high-definition display device with high color purity is provided without performing selective deposition of light-emitting layers. In a light-emitting element, a plurality of light-emitting layers emitting light of different colors are stacked. The closer the light-emitting layer is positioned to the electrode having a reflective property, the shorter the wavelength of light emitted from the light-emitting layer is.

A solar cell includes a doped layer disposed on a first surface of a semiconductor substrate, a doped polysilicon layer disposed in a first region of a second surface of the semiconductor substrate, a doped area disposed in a second region of the second surface, and an insulating layer covering the doped polysilicon layer and the doped area. The insulating layer has openings exposing portions of the doped polysilicon layer and the doped layer, and the doped polysilicon layer and doped layer are respectively connected to a first electrode and a second electrode through the openings. The semiconductor substrate and the doped layer have a first doping type. One of the doped polysilicon layer and the doping area has a second doping type, and the other one of the doped polysilicon layer and the doping area has the first doping type which is opposite to the second doping type.

A touch-sensitive display panel including a first substrate, a second substrate, an active pixel matrix, many driving circuits, many sensing electrodes and many color filter layers is provided. The active pixel matrix includes many pixels. The second substrate has a first surface and a second surface, wherein the first surface faces the active pixel matrix. The driving circuits are corresponding to the edges of the pixels for forming many openings. Each driving circuit includes a first main line and a second main line. The first main line has a first end connected to the active pixel matrix and a second end connected to the first substrate. The second main line is connected to the second end of the first main line through the first substrate. The color filter layers are filled in the openings. The sensing electrodes and the driving circuits are used for detecting at least one touch point.

An instrument is disclosed for measuring resistivity of Earth formations from within a conductive pipe inside a wellbore drilled through the formations. The instrument includes a plurality of housings connected end to end and adapted to traverse the wellbore. At least one electrode is disposed on each housing. Each electrode is adapted to be placed in electrical contact with the inside of the pipe. The instrument includes a source of electrical current, a digital voltage measuring circuit and a switch. The switch is arranged to connect the source of electrical current between one of the electrodes and a current return at a selectable one of the top of the pipe and a location near the Earth's surface at a selected distance from the top of the pipe, and to connect selected pairs of the electrodes to the digital voltage measuring circuit. The pairs are selected to make voltage measurements corresponding to selected axial distances and selected lateral depths in the Earth formations.

A welder for welding a base metal. The welder may include a first electrode for forming a first arc with the base metal and a second electrode for forming a second arc between the first and second electrodes. A compact welder, welding system, and method are also provided.

An electronic system includes a three terminal device having a light emitting portion and a magnetically sensitive portion. The magnetically sensitive portion is for modulating light emission from the light emitting portion. The device is a spin valve transistor having a light-emitting quantum well in its collector. The device can convert a magnetic digital signal to both an electrical digital signal and an optical digital signal, wherein either or both of these signals can be provided as a device output. The magnetically sensitive portion of the device is formed of a pair of magnetically permeable layers. When the layers are aligned electron current can pass through with sufficient energy to reach a quantum well where they recombine, generating light. The device may be used to read a magnetic storage medium, such as a disk drive. Or it can be used to provide a display or a memory array composed of single device magnetic write, optical read memory cells. Amplification can be provided to the transistor by adjusting the collector base voltage to provide secondary electrons by impact ionization to provide greater electron current and a correspondingly larger optical emission signal.

A microelectromechanical structure and device and methods of forming and using the structure and device are disclosed. The structure includes a mechanical element, an ion conductor and a plurality of electrodes. Mechanical properties of the structure are altered by applying a bias across the electrodes. Such structures can be used to form devices such as resonators for RF applications.

Provided are a method of fabricating a light-emitting apparatus with improved light extraction efficiency and a light-emitting apparatus fabricated using the method. The method includes: preparing a monocrystalline substrate; forming an intermediate structure on the substrate, the intermediate structure comprising a light-emitting structure which comprises a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type stacked sequentially, a first electrode which is electrically connected to the first conductive pattern, and a second electrode which is electrically connected to the second conductive pattern; forming a polycrystalline region, which extends in a horizontal direction, by irradiating a laser beam to the substrate in the horizontal direction such that the laser beam is focused on a beam-focusing point within the substrate; and cutting the substrate in the horizontal direction along the polycrystalline region.

The plasma processing apparatus includes main electrodes 5, 31 opposed to each other with a plasma processing space 15 interposed therebetween. The plasma processing apparatus further has a side electrode 6 opposed to side faces 5B-1, 5B-2 of the main electrode 5, as well as a side electrode 32 opposed to side faces 31B-1, 31B-2 of the main electrode 31. Therefore, in addition to the plasma processing space 15 between the main electrode 5 and the main electrode 31, an electric field can be formed in spaces between the side faces of the main electrodes 5, 31 and the side electrodes 6, 32, the spaces serving as predischarge areas 16-1, 16-2. By this electric field, processing gas present in the predischarge areas 16-1, 16-2 can be transformed into plasma. Electrons and excitation species of the plasma generated in these predischarge areas 16-1, 16-2 can be supplied directly to the plasma processing space 15.

Transistor bodies of semiconductor material located at a main surface of a semiconductor substrate between shallow trench isolations are provided with a rounded or curved upper surface. A floating gate electrode is arranged above said upper surface and electrically insulated from the semiconductor material by a tunnel dielectric having essentially the same tiny thickness throughout a primary tunnel area encompassing the area of curvature. The floating gate electrode may bridge the transistor body and is covered with a coupling dielectric provided for a control gate electrode, which forms part of a wordline.

A non-aqueous electrolyte battery according to the present invention is a non-aqueous electrolyte battery including: a positive electrode including a positive collector and a positive active material containing layer formed on the positive collector; a negative electrode including a negative collector and a negative active material containing layer formed on the negative collector; and a separator provided between the positive electrode and the negative electrode. The positive electrode has a positive collector exposed portion at a part of the positive collector, on which the positive active material containing layer is not formed. An insulating resin film formed of a base substance of a heat resistant resin having a heat resistant temperature of 150° C. or more, the resin film containing a thermoplastic resin therein, is provided at a portion where the positive collector exposed portion and the negative active material containing layer are opposed to each other with the separator positioned therebetween.

A transconductance amplifier mirror circuit is connected to an electrode for sensing the capacitance of the electrode with reference to ground, or the capacitance between the electrode and another electrode. A voltage level change is produced on the electrode connected to the transconductance amplifier mirror circuit to cause the transconductance amplifier mirror circuit to supply charges to or drain charges from a charge calculation circuit. The charge amount variation is converted to a signal for calculating the sensed capacitance.

A towrope type ocean controllable source electromagnetism and earthquake data collection system is composed of electric field sensors (non-polarized electrodes) distributed in three or more towropes uniformly or not, three-component induction coil type or three-component fluxgate type magnetic field sensors and sonic sensors composed of hydrophones or accelerometers and is used for measuring ocean three-component magnetic-field components, electric field components EX distributed in the cable direction, electric field components EY distributed in the vertical cable direction and ocean earthquake data. The towrope type ocean controllable source electromagnetism and earthquake data collection system can collect ocean electromagnetism data and ocean earthquake data in the time domain and the frequency domain at the same time, increase the collection quantity of ocean geophysics data of advancing construction at a time in a multiplying mode, effectively improve the target detection precision and explore and evaluate ocean mineral products, oil and gas resources and methane hydrates through combination and comprehensive application of ocean controllable source time-frequency electromagnetism and the earthquake exploration technology.

It is an object to provide a semiconductor device for high power application which has good properties. A means for solving the above-described problem is to form a transistor described below. The transistor includes a source electrode layer; an oxide semiconductor layer in contact with the source electrode layer; a drain electrode layer in contact with the oxide semiconductor layer; a gate electrode layer part of which overlaps with the source electrode layer, the drain electrode layer, and the oxide semiconductor layer; and a gate insulating layer in contact with an entire surface of the gate electrode layer.

A highly reliable semiconductor device is provided. A semiconductor device is manufactured at a high yield, so that high productivity is achieved. In a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, an oxide semiconductor film containing indium, and an insulating layer provided on and in contact with the oxide semiconductor film so as to overlap with the gate electrode layer are stacked and a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor film and the insulating layer, the chlorine concentration and the indium concentration on a surface of the insulating layer are lower than or equal to 1×10¹⁹/cm³ and lower than or equal to 2×10¹⁹/cm³, respectively.

A negative electrode current collector for a non-aqueous electrolyte secondary battery comprising copper or a copper alloy, characterized in that the copper or copper alloy has a ratio I200/I111 of an intensity I200 of a peak attributed to (200) plane to an intensity I111 of a peak attributed to (111) plane, which satisfies the equation (1): 0.3<=I200/I111<=4.0 (1) in an X-ray diffraction pattern measured using CuKalpha radiation as a radiation source.