Oxide thin film
Inactive Publication Date: 2001-09-25
TDK CORPARATION +1
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However, since prior art transparent conductive oxides are all of n type and no transparent conductive oxides of p type are available, it is difficult to form a p-n junction solely from transparent conductive oxides.
This suggests that even if a hole is successfully created by any suitable means in order to provide a p-type transparent conductive thin film, the hole is localized on the oxygen ion and has a deep level that cannot be ionized at room temperature, failing to prov
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Abstract
An object of the invention is to provide an oxide thin film which exhibits a widegap or transparency and p-type conductivity although it has heretofore been very difficult to form. The oxide thin film formed on a substrate contains copper oxide and strontium oxide as a main component and exhibits p-type conductivity at a bandgap of at least 2 eV.
Description
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