123results about "Vacuum evaporation coating" patented technology

A reactor for processing a substrate includes a first housing defining a processing chamber and supporting a light source and a second housing rotatably supported in the first housing and adapted to rotatably support the substrate in the processing chamber. A heater for heating the substrate is supported by the first housing and is enclosed in the second housing. The reactor further includes at least one gas injector for injecting at least one gas into the processing chamber onto a discrete area of the substrate and a photon density sensor extending into the first housing for measuring the temperature of the substrate. The photon density sensor is adapted to move between a first position wherein the photon density sensor is directed to the light source and a second position wherein the photon density sensor is positioned for directing toward the substrate. Preferably, the communication cables comprise optical communication cables, for example sapphire or quartz communication cables. A method of processing a semiconductor substrate includes supporting the substrate in a sealed processing chamber. The substrate is rotated and heated in the processing chamber in which at least one reactant gas is injected. A photon density sensor for measuring the temperature of the substrate is positioned in the processing chamber and is first directed to a light, which is provided in the chamber for measuring the incident photon density from the light and then repositioned to direct the photon density sensor to the substrate to measure the reflection of the light off the substrate. The incident photon density is compared to the reflected light to calculate the substrate temperature.

A sheet-like pane bearing a low-maintenance coating on one surface and a low-emissivity coating on the opposite surface, wherein one of the low-maintenance coating and the low-emissivity coating has a single surface reflectivity of less than 3 times, and more than one-third, that of the other coating.

A supported graphene device comprises at least one graphene feature of 1 to about 10 graphene layers having a predetermined shape and pattern, with at least a portion of each graphene feature being supported on a substrate. In some embodiments the device comprises graphene features supported on crystalline semiconductor substrate, such as silicon or germanium. The graphene features on a crystalline semiconductor substrate can be fabricated by forming an amorphous carbon doped semiconductor on the crystalline semiconductor substrate and then epitaxially crystallizing the amorphous semiconductor with carbon migration to the surface to form a graphene feature of one or more graphene layers. The epitaxy can be promoted by heating the device or by irradiation with a laser. Methods for fabricating graphene on a variety of substrates, over large areas with controlled thicknesses employ ion implantation or other doping techniques followed by pulsed laser annealing or other annealing techniques that result in solid phase regrowth are presented.

Provided is a copper or copper alloy target/copper alloy backing plate assembly in which the anti-eddy current characteristics and other characteristics required in a magnetron sputtering target are simultaneously pursued in a well balanced manner. This copper or copper alloy target/copper alloy backing plate assembly is used for magnetron sputtering, and the copper alloy backing plate is formed from low beryllium copper alloy or Cu—Ni—Si-based alloy. Further, with this copper or copper alloy target/copper alloy backing plate assembly, the copper alloy backing plate has electrical conductivity of 35 to 60% (IACS), and 0.2% proof stress of 400 to 850 MPa.

A write-once-read-many optical recording medium enabling excellent recording and reproducing properties at a wavelength of blue-laser wavelengths or shorter, i.e. 500 nm or less, particularly at wavelengths of near 405 nm and high density recording. To this end, a write-once-read-many optical recording medium of the invention comprises a recording layer using a material represented by BiOx (0<x<1.5), in which a recorded mark comprises crystal of Bi and/or crystal of a Bi oxide. Another write-once-read-many optical recording medium comprises a recording layer which comprises Bi, oxygen, and M (M represents at least one element selected from Mg, Al, Cr, Mn, Co, Fe, Cu, Zn, Li, Si, Ge, Zr, Ti, Hf, Sn, Mo, V, Nb, Y, and Ta), in which a recorded mark comprises crystal of the elements contained in the recording layer and crystal of an oxide of the elements.

The invention discloses a preparation method of a molybdenum-niobium alloy sputtering target. The method comprises the following steps: (1) molybdenum powder and niobium powder are put in a mixing tank of a mixing machine for uniformly mixing to obtain mixed powder; (2) the cold isostatic pressing is performed for the mixed powder to obtain a slab; and the slab is pre-sintered under the vacuum or hydrogen atmosphere protection condition to obtain a molybdenum-niobium alloy prefabricated blank; (3) the surface of the molybdenum-niobium alloy prefabricated blank is turned and milled; and the hot isostatic pressing is performed to obtain a molybdenum-niobium alloy part; and (4) the mechanical processing and the surface grinding are performed for the molybdenum-niobium alloy part to obtain the molybdenum-niobium alloy sputtering target. The preparation method is simple in process, and saves raw materials; the introduction of impurity elements can be reduced in the preparation process; the prepared molybdenum-niobium alloy sputtering target is uniform in components, free of segregation and fine in grains; the theoretic density can reach above 99%; the oxygen mass content is lower than 500 ppm; and the requirements of the sputtering target can be preferably satisfied.

A method of depositing a layer of a coating material (e.g., DLC protective overcoats of magnetic and magneto-optical recording media) on a surface of a substrate/workpiece, the layer including relatively thin and relatively thick regions defining a thickness gradient at a boundary therebetween, comprising steps of: (a) providing a filtered cathodic arc deposition (FCAD) process/treatment chamber comprising a FCAD source including means for providing a focused plasma beam containing ions of a coating material and means for scanning the plasma beam over a substrate/workpiece surface; (b) providing the process/treatment chamber with a substrate/workpiece including a surface for deposition thereon; and (c) forming on the surface a layer of coating material including the relatively thin and relatively thick regions defining the thickness gradient at the boundary therebetween by scanning the plasma beam over at least a portion of the surface.

A thin film deposition apparatus and method are disclosed in this invention. The apparatus includes a depositing thin-film particle source, a beam-defining aperture between the particle source and the deposited substrate(s), and a substrate holder to rotate the substrate(s) around its center and move the center along a lateral path so that the substrate(s) can scan across the particle beam from one substrate edge to the other edge. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface of each substrate facing the beam of thin-film particles. The method further includes a step of providing a rotational means for rotating the substrate holder to rotate each of the substrates exposed to the thin-film particles for depositing a thin film thereon. And, the method further includes a step of providing a laterally reciprocal moving means for reciprocally moving said substrate holder for said beam traversing on said substrate holder from one side of the edge to the other side of the edge or at least passing through the central area of said substrate holder.

The invention discloses a product surface double-color glaze and matte treatment method. Firstly, a layer of silver powder paint is sprayed to a product surface, and a layer of colored paint is sprayed to the surface of the silver powder paint; a layer of transparent colorless UV/PU paint is sprayed to the surface of the colored paint; a film layer with indium as a target material is plated on the surface of the UV/PU paint; a layer of transparent colorless UV/PU protective paint is sprayed on the surface of the film layer; part of the UV/PU protective paint and the film layer of a product are carved out through an optical fiber laser etching machine; the area formed after laser etching is deplated, and gasified matter formed after laser etching is removed; a layer of transparent colorless UV/PU intermediate paint and a layer of transparent colorless UV/PU surface paint are sprayed; the area subjected to laser etching and pervious to the colored paint is subjected to extinction treatment through a carbon dioxide laser etching machine. In the product surface double-color glaze and matte treatment method, the product can present a metallic look high in light reflection due to the film plating procedure. By means of laser etching, the film layer and the protective paint at some positions are carved out, the positions are pervious to the color of bottom paint, finally, the surface of the whole product is sprayed with the intermediate paint and the surface paint, the corresponding area pervious to the bottom paint after laser etching is subjected to extinction treatment, and the double-color glaze and matte integral effect is achieved on the product surface.

The invention relates to an ion beam emission source capable of outputting single iron energy so as to solve the problems of the prior art that the extracted ion does not have single energy, the quality of the film is greatly influenced and the repeatability of ion beam assistance is difficult to realize. The technical proposal is as follows: the emission source comprises a gas discharge chamber, a focusing magnetic field generating unit, an ion energy selector and a beam expanding magnetic field generating unit; the gas discharge chamber comprises an anode, a cathode and an extracting grid plate; the ion energy selector comprises an upper magnetic polar plate and a lower magnetic polar plate which are oppositely arranged, and a selecting cylinder which is formed by a first electrode plate and a second electrode plate which are oppositely arranged; polar plate insulating members are arranged among the upper magnetic polar plate, the first electrode plate, the lower magnetic polar plate and the second electrode plate; and the centers of an inlet cover plate and an outlet cover plate at two ends of the selecting cylinder are respectively provided with an energy band limit through hole. Compared with the prior art, the emission source has the advantages that: 1. ion with single energy can be generated and extracted; 2. the energy of the ion is adjustable; and 3. the manufacture process is simple.

The invention belongs to the field of luminescent materials, and discloses a preparation method for a gallium-doped zinc oxide transparent conducting film. The method comprises the following steps of: preparing a Ga2O3:ZnO ceramic target; performing vacuum treatment on a cavity of coating equipment; and adjusting parameters of a magneto-controlled sputter coating process, and coating a film. According to the prepared gallium-doped zinc oxide transparent conducting film, the used target is a single-Ga-component target, and the film with different Ga contents can be prepared by adjusting the parameters of the magneto-controlled sputter coating process; and the resistivity of the gallium-doped zinc oxide transparent conducting film is reduced and then increased along with the increasing of the Ga content; and when the Ga content is 4.6 weight percent, the lowest resistivity is 6.6*10<-4> Omega cm, and the average visible light transmissivity is more than 85 percent.

To provide a magnetron sputtering cathode, a magnetron sputtering apparatus, and a method of manufacturing a magnetic device, capable of generating a leakage magnetic field sufficiently large to form a magnetic tunnel necessary for discharge on the surface of a target even when the target is a magnetic body and thick and a ferromagnetic body is used as the target. The magnetron sputtering cathode of the present invention includes a target having a second annular groove provided on the sputtering surface of the target, a third annular projection provided on the non-sputtering surface of the target, a fourth annular groove provided outside the third annular projection on the non-sputtering surface, and a fourth annular projection provided outside the fourth annular groove on the non-sputtering surface. Further, the magnetron sputtering cathode includes a first magnet and a second magnet 6 having a polarity different from that of the first magnet on the non-sputtering surface side.

The objective of the invention is to provide an adhesion-prevention plate used for a vacuum film-forming device, a manufacturing method of the plate, a vacuum film-forming device adopting the adhesion-prevention plate and a vacuum film forming method, wherein the adhesion-prevention plate has good stripping preventing effects of a film forming material in a repeated evaporation circumstances. The adhesion-prevention plate is used for preventing adhesion of the film forming material to an unneeded position in the vacuum film-forming device, is made of aluminum, and comprises a surface of a concave-convex structure having concave parts with an average opening diameter being 0.01-9 [mu]m. A plurality of convex parts having an average height of 30-1000 [mu]m are arranged on the surface. The average density of the convex parts is higher than 10/10 mm<2>. The ratio of the bottom area of the convex parts is larger than 90% in a square area having a size of 10 mm.

The invention relates to a plating method for an anti-reflection film with high transmittance and low reflectivity, wherein the method is the key technology of window glasses and filters of digital cameras, and the technology can further be applied in fields of radiation protection glasses, thermal insulation glasses, window glasses, solar energy utilization and the like. The method comprises the following steps in vacuum plating equipment: (1) pumping vacuum; (2) heating; (3) cleaning ions (Ar and O2); (4) plating SiO2; (5) etching under full oxygen atmosphere (only introducing O2); (6) plating TiO2; and (7) etching under full oxygen atmosphere (only introducing O2), and repeated performing the steps of (4)-(7) until the film system is completed. According to the present invention, the transmittance of the anti-reflection film in the optical wavelength region of 400-700 nm is improved without improvement of vacuum plating equipment requirements, and the reflectivity is further reduced.

The invention discloses a method for preparing a fluorine-doped tin oxide thin film, which is low in cost and simple in process, and utilizes a radio frequency magnetron sputtering technology. The method comprises the following steps of: a, uniformly mixing tin oxide powder and fluoride, and drying; b, preparing a powder target by using the dried mixture obtained in the step a, installing on a radio frequency target of a sputtering instrument, cleaning and drying a substrate material, and then installing at a sample position of a vacuum chamber of the sputtering instrument; and c, starting a sputtering process, and thus preparing the fluorine-doped tin oxide thin film. The method is simple, the production cost is low, and the fluorine-doped tin oxide (FTO) thin film also has high transmitting and electric conduction performance, is high in comprehensive index FTC value, and has good application prospect.

Disclosed herein is a deposition apparatus with a guide roller for a long superconducting tape. The deposition apparatus has a supply reel which is provided in a vacuum chamber and rotated to supply the tape, a feed and deposition unit which is spaced apart from the supply reel and vacuum deposits a superconducting layer on the tape while feeding the tape, and a collection reel which is spaced apart from the feed and deposition unit and is rotated to collect the vacuum-deposited tape. The feed and deposition unit includes a drum which is rotated to wind the tape on a predetermined portion of an outer circumference of the drum several times, thus feeding the tape, and a guide roller which is spaced apart from the drum, includes a plurality of rollers each having on an outer circumference thereof grooves and protrusions at regular intervals, and is inclined at a predetermined angle with respect to a rotating shaft of the drum by a sum of a width of the tape and a thickness of each of the protrusions, with the tape passing over an outer circumference of the guide roller. The invention deposits a superconducting layer while maintaining constant tension when the tape is thermally deposited, thus preventing the tape from being deformed because of the difference in the thermal expansion and contraction of the tape resulting from non-uniform tension.

The invention provides a Cr-Fe-V-Ta-W-series high-entropy alloy thin film for high throughput screening and a preparation method thereof and belongs to the field of high-entropy alloys. The componentexpression of the Cr-Fe-V-Ta-W-series high-entropy alloy thin film for high throughput screening is (CrFeV<c>)<100-x>(Ta<d>W<e>)<x>, wherein x is larger than 6 and smaller than 100; values of a,b and c meet the situation that the difference of substance amounts of any two of Cr, Fe and V does not exceed 2% of the total substance amount of all elements, and values of d and e meet the situation that the difference of substance amounts of Ta and W does not exceed 3% of the total substance amount of all the elements; and the transverse components of the Cr-Fe-V-Ta-W-series high-entropy alloy thin film for high throughput screening are the same, and the atom percentage compositions of longitudinal Cr, Fe and V are distributed in a gradient mode. The method is simple, the throughput is high, and the Cr-Fe-V-Ta-W-series high-entropy alloy thin film for high throughput screening and with components distributed in a gradient mode can be obtained through one-time co-sputtering.