97 results about "Si substrate" patented technology

A composite flow field element, such as a separator plate used in a high temperature air-cooled fuel cell assembly, preferably includes a metal sheet substrate of non-uniform thickness, such as a mesh, and flexible graphite layers bonded to the metal mesh substrate by an electrically conductive bonding agent.

A silicon on insulator shaped structure formed to reduce floating body effect comprises a T-shaped active structure and a body contact for back bias. Etching a T-shape through two layers of oxide will form the T-shaped active areas. A back bias is formed when a metal line is dropped through the SOI structure and reaches a contact plug. This contact plug is doped with N+ or P+ dopant and is embedded in a Si substrate. The T-active shaped structure is used to reduce the short channel effects and junction capacitance that normally hinder the effectiveness of bulk transistors. The back bias is used as a conduit for generated holes to leave the SOI transistor area thus greatly reducing the floating effects generally associated with SOI structures.

There is provided a liquid processing method for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The liquid processing method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution.

The invention relates to a thermoelectric generator module with a hot zone and a cold zone including at least a first metal-ceramic substrate, which has a first ceramic layer and at least one structured first metallization applied to the first ceramic layer and is assigned to the hot zone, and at least a second metal-ceramic substrate, which has a second ceramic layer and at least one structured second metallization applied to the second ceramic layer and is assigned to the cold zone, and also a number of thermoelectric generator components located between the first and second structured metallizations of the metal-ceramic substrates. The first metal-ceramic substrate, assigned to the hot zone, has at least one layer of steel or high-grade steel, wherein the first ceramic layer is arranged between the first structured metallization and the at least one layer of steel or high-grade steel. The invention also relates to an associated metal-ceramic substrate and to a method for producing it.

The invention provides a pre-alignment device and method of square substrates. The pre-alignment device of the square substrates is used for measuring the piece feeding error (eccentricity and deviation of substrates) of a mechanical arm in the substrate transmission process, and the measurement process is named as pre-alignment. In the method, a mechanical arm, a workpiece platform, a first detector, a second detector and a controller are mainly adopted, wherein the square substrates are loaded on the workpiece platform, the first detector is used for scanning the first edges of the square substrates and calculating the deviation values of the first edges; the second detector is used for scanning the second edges of the square substrates and calculating the deviation values of the second edges, and the second edges are vertical to the first edges; the controller is used for controlling and driving the workpiece platform according to the deviation values of the first edges and the deviation values of the second edges. The pre-alignment device and method of the square substrates, provided by the invention, generate no damage to the square substrates, save the time and improve the economic efficiency. Since an edge scanning surface manner is adopted, numerous sampling points are adopted and are close to the actual states of the edges, thereby improving the measuring precision.

The invention provides a method for preparing a semiconductor material through ion injection and fixed-point adsorption technologies. The method comprises the steps of firstly extending at least one period of an SixGe1-x/Si superlattice structure (x is greater than or equal to 0 and smaller than 1) on an Si substrate, sequentially growing an Si buffer layer and an SizGe1-z layer on the superlattice structure, then injecting H or He ions into the Si substrate and performing rapid annealing treatment, so as to ensure that the superlattice structure is adsorbed to the ions, and finally obtaining an SizGe1-z layer with low defect concentration and high relaxation. By bonding with the Si substrate with an oxidation layer, SGOI with low defect concentration and high relaxation can be prepared through smart cut, strained silicon with the thickness being smaller than the critical thickness is expanded on the obtained relaxation SizGe1-z layer, and strained silicon (sSOI) with high relaxation and low defect concentration on insulators can be prepared through smart cut. The method improves the stability of relaxation SiGe material prepared through ion injection through superlattice adion, obtains SiGe material with low defect concentration and high relaxation, reduces the technology difficulty, and is applicable to industrial production.

A solid-state image sensor includes a pixel formed, upon forming a structure where a photoelectric conversion layer is laminated on a wiring layer constituting a pixel circuit, by forming at least the photoelectric conversion layer and a wiring layer bonding layer on a different substrate from a semiconductor substrate in which the wiring layer is formed, and by bonding the wiring layer bonding film of the different substrate and the wiring layer of the semiconductor substrate together.

A radio frequency circuit includes a multilayer substrate, series arm circuits in a first path connecting the input/output terminals (T1 and T2) on the multilayer substrate, a parallel arm circuit in a second path connecting a node on the first path and a ground, a wiring A on the multilayer substrate connected to the input/output terminal (T1) as a part of the first path, a wiring B on the multilayer substrate connected to the input/output terminal (T2) as a part of the first path, and a wiring C on the multilayer substrate as a part of the second path. The parallel arm circuit includes an impedance variable circuit, the wiring A and the wiring B in a layer different from the multilayer substrate. When viewed in a plan view, the wiring C does not overlap with the wiring A and the wiring B.

The invention discloses a complementary type resistive random access memory and preparation method thereof. The complementary type resistive random access memory includes a bottom layer conductive oxide electrode, a CuO storage medium layer arranged on the upper surface of the bottom layer conductive oxide electrode and a ZrO storage medium layer arranged on the upper surface of the CuO storage medium layer. The method is as follows: direct current magnetron sputtering is adopted to prepare a conductive oxide thin film on a Si substrate, magnetron sputtering is adopted to prepare a CuO storage medium layer on the upper surface of the conductive oxide thin film, magnetron sputtering is adopted to prepare a ZrO storage medium layer on the upper surface of the CuO storage medium layer, and magnetron sputtering is adopted to prepare a W electrode on the upper surface of the ZrO storage medium layer. The complementary type resistive random access memory structure solves the problem of crosstalk of a cross array resistive random access memory without additionally using a diode or triode, and has the characteristic that a circuit is simple.

The invention provides a fabrication method of a display panel, the display panel and a display device. The display panel comprises a color film substrate, a first array substrate and a second array substrate which are arranged in a lamination way, the first array substrate comprises a first effective display region and a first bonding region, the first bonding region is arranged at the peripheryof the first effective display region, the first bonding region is arranged near to a first side edge of the display panel, the second array substrate comprises a second effective display region and asecond bonding region, the second bonding region is arranged at the periphery of the second effective display region, and the second bonding region is arranged at one side, far away from the first side edge, of the display panel. Since the first bonding region and the second bonding region are respectively arranged at two ends, opposite to each other, of the display panel, the temperatures and the pressure of the two bonding regions cannot be affected with each other during performing a bonding process, and the process difficulty is reduced; and moreover, a spacing region is not needed to bearranged between the two bonding regions, so that the frame width of the display panel is reduced.

The invention relates to a process method for preparing a lithium battery diaphragm by using a 3D printing technology. The method comprises the following steps: A) uniformly mixing a diaphragm base material, an ultrafine ceramic powder and one of PVDF and PMMA in a blender mixer according to a required ratio, transferring into a grinding machine, and grinding to obtain a mixed material with required granularity; B) transferring the obtained mixed material into a heater with a stirring function, heating to melt the material, adding an organic solvent to adjust viscosity of the material, and stirring for 2-5 hours; and C) transferring the molten material into a material injector of a 3D printer, pushing a piston of the injector to enable the material to be sprayed on a substrate in a certainshape and thickness through a spray head of the 3D printer, peeling off the material from the substrate after complete cooling, curing and molding, and rolling to obtain the multifunctional compositediaphragm embedded with the ultrafine nano ceramic powder. The method has the beneficial effect that the thickness-controllable multifunctional composite diaphragm embedded with the ultrafine nano ceramic powder is obtained by applying the 3D printing technology.

A thin film capacitor is provided with a lower electrode made of a metal foil containing many metal grains, a dielectric thin film formed on an upper surface of the lower electrode, and an upper electrode formed on an upper surface of the dielectric thin film. A lower surface of the lower electrode is an etched surface from which cross sections of the metal grains appear. The height difference between the cross sections of adjacent metal grains in the etched surface is 1 μm or more and 8 μm or less.

The invention discloses an Ni film annealing patterned graphene preparation method based on 3C-SiC/chlorine gas reaction, which mainly solves the problem that the graphene prepared by the prior art can cause damage and result in electron mobility reduction when being used for photoetching technology as a transistor channeling material. The preparation method comprises the following steps: (1) growing a carbonization layer on an Si substrate as a transition layer; (2) growing a 3C-SiC film on the carbonization layer; (3) depositing SiO2 on the surface of the 3C-SiC film, and etching a pattern on the SiO2; (4) reacting the patterned sample wafer with Cl2 to generate a carbon film; (5) removing the SiO2 except the pattern; (6) depositing an Ni film on the carbon film by using an electron beam; and (7) putting the sample wafer with the deposited Ni film in Ar gas, and annealing for 15-30 minutes so that the carbon film reconstitutes the patterned graphene in the pattern position. The invention has the advantages of simple technique and high safety; the graphene can be directly used as a conducting channel without photoetching when making a transistor on the graphene; and the graphene can be used for making graphene transistors with superhigh mobility.

Discussed is a device for self-assembling semiconductor light-emitting diodes includes a substrate chuck that is provided in an assembly chamber and supports a substrate and disposes the substrate at an assembly position, wherein the substrate chuck sucks or injects a gas present between the substrate and a fluid during loading and unloading of the substrate.

An embodiment of the invention discloses a cover plate, a preparation method thereof and a display device. The cover plate comprises a glass substrate and a filter film, wherein the filter film is arranged on the glass substrate and used for preventing blue-violet light on the side of the glass substrate from penetrating through the cover plate. According to the cover plate, the filtering function of the filter film is utilized, blue-violet light in external light is prevented from penetrating through the cover plate and entering an OLED display panel, the risk that the blue-violet light in the external light irradiates a blue light-emitting material of the OLED display panel, and consequently the blue light-emitting material is damaged is avoided, the blue light-emitting material is protected, the light emitting quality of the OLED display panel is protected, and the service life of the OLED display panel is prolonged.

An electronic component mounting device (100) bonds a semiconductor die (150) to a substrate by thermocompression bonding, and seals, using an insulating resin, a gap between the semiconductor die (150) and the substrate. The electronic component mounting device is provided with: a film cutting mechanism (200) for cutting a long film (210) into cut pieces; and a mounting tool (110), which vacuum-sucks the semiconductor die (150), and bonds the die to the substrate by thermocompression bonding. Consequently, in the electronic component mounting device (100) that moves a mounting head in the horizontal direction, adhesion of the insulating resin to the mounting tool can be suppressed.