Complementary type resistive random access memory and preparation method thereof

A resistive memory, complementary technology, applied in electrical components and other directions, can solve the problems of increasing the complexity of the circuit and the area of ​​the components, and achieve the effects of compatible manufacturing processes, simple circuits and stable properties.

Inactive Publication Date: 2017-10-10
HENAN INST OF ENG
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  • Abstract
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AI Technical Summary

Benefits of technology

This new type of device called CRAM (Compact Random Access Memory) uses two different types of materials - zirconium oxide and copper oxide – instead of just one material used for each layer. These devices are simpler than previous designs but still work well together due to their easy-to-manufacture nature.

Problems solved by technology

Technological Problem: Current methods used by computer systems are prone to causing data stored on these types of memory device (such as magnetic hard disk) to get lost due to interference from signals transmitted through nearby wires that may also affect their performance. Crosstalks can occur during writing operations caused by voltage differences across adjacent wirings. A solution involving connecting certain components together into an integrated unit called a hybrid resistor architecture was developed to address this issue.

Method used

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  • Complementary type resistive random access memory and preparation method thereof
  • Complementary type resistive random access memory and preparation method thereof

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Embodiment Construction

[0027] The present invention will be further described below in conjunction with specific examples, but the present invention is not limited to the following examples. The methods are conventional methods unless otherwise specified.

[0028] like figure 1 As shown, the complementary RRAM in this embodiment includes, as the bottom layer, an AZO conductive electrode 1 , a polycrystalline CuO storage medium layer 2 , an amorphous ZrO storage medium layer 3 , and a W electrode 4 . The bottom conductive electrode can also be made of materials such as ITO, FTO or GZO, preferably AZO; the thickness of the AZO electrode 1 is 100nm-500nm, preferably 200nm; the thickness of the polycrystalline CuO storage medium layer 2 is 10nm-200nm, preferably 50nm; amorphous The thickness of the ZrO storage medium layer 3 is 5nm-200nm, preferably 20nm. The thickness of the top electrode W is 50nm-500nm, preferably 100nm.

[0029] figure 1 The specific preparation process of the complementary RRAM in

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Abstract

The invention discloses a complementary type resistive random access memory and preparation method thereof. The complementary type resistive random access memory includes a bottom layer conductive oxide electrode, a CuO storage medium layer arranged on the upper surface of the bottom layer conductive oxide electrode and a ZrO storage medium layer arranged on the upper surface of the CuO storage medium layer. The method is as follows: direct current magnetron sputtering is adopted to prepare a conductive oxide thin film on a Si substrate, magnetron sputtering is adopted to prepare a CuO storage medium layer on the upper surface of the conductive oxide thin film, magnetron sputtering is adopted to prepare a ZrO storage medium layer on the upper surface of the CuO storage medium layer, and magnetron sputtering is adopted to prepare a W electrode on the upper surface of the ZrO storage medium layer. The complementary type resistive random access memory structure solves the problem of crosstalk of a cross array resistive random access memory without additionally using a diode or triode, and has the characteristic that a circuit is simple.

Description

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Claims

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Application Information

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Owner HENAN INST OF ENG
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