22 results about "Etching" patented technology

The invention provides a preparation method of a top gate metal oxide thin film transistor (TFT), belonging to the technical field of semiconductors. The method comprises the following steps: preparing a source/drain electrode; then preparing a metal oxide material; coating a photoresist on the surface of the metal oxide material and carrying out chemical mechanical polishing on the photoresist layer; processing the metal oxide which is not masked by the photoresist by annealing or plasmas; and finally stripping the photoresist and depositing a gate insulation layer material through magnetronsputtering and forming a gate through wet etching. The method has the following beneficial effects: reliable ohmic contact between the metal oxide thin film and the source/drain electrode can be formed by utilizing the characteristic that the metal oxide material can be converted into a conductor from a semiconductor after undergoing special processing.

The electrode for high-voltage in-situ impedance spectroscopy measurement of the present invention and its preparation method and application belong to the technical field of in-situ measurement of electrical quantities under high-voltage conditions. The electrode consists of an aluminum oxide protective layer (3) deposited on the surface of the diamond anvil (2) and a metal film electrode (1); the metal film electrode (1) is circular in the center of the anvil surface of the diamond anvil (2), Copper wire (5) is bonded to the metal film electrode (1) on the side of the diamond anvil (2); the metal spacer (4) is used as another electrode, forming an axisymmetric electrode together with the metal film electrode (1) system. Electrodes are prepared by magnetron sputtering, molybdenum coating, aluminum oxide deposition, photolithography and chemical corrosion. The invention solves the problems of electrode fixing and sample cavity insulation, and can ignore the influence of the parasitic capacitance and inductance of the system on the measurement results, making it possible to measure the material impedance spectrum in situ with the diamond anvil under high pressure.

The invention discloses a multi-wavelength femtosecond laser scanning type etching method for a printed circuit board. According to the multi-wavelength femtosecond laser scanning type etching method for the printed circuit board, a femtosecond laser device provided with a frequency doubling module is used as a laser source, and the femtosecond laser device can emit laser beams with different wavelengths so as to etch different layers, made of different materials, on the printed circuit board correspondingly; etching of all the layers of the printed circuit board can be completed on the same station, and machining errors caused by repeated positioning are avoided; meanwhile, more refined line-width etching can also be achieved, so that the printed circuit board is made smaller, lighter and thinner; machining is convenient, and the machining precision and quality are excellent.

A method is used for manufacturing a semiconductor wafer. The back surface of a semiconductor wafer is ground. The back surface is cleaned with ozone water. The back surface of the semiconductor wafer is etched with a mixed acid that contains hydrofluoric acid and nitric acid. The cleaning and etching are carried out alternately such that the cleaning and etching are each repeated a plurality of times. The etching is performed after the grinding, beginning when the semiconductor wafer is wet with the ozone water. The cleaning is performed after the etching, beginning when the semiconductor wafer is wet with an etching solution.

The invention relates to a preparation method of a tunneling oxidation passivation PERC battery with selective contact with an emitter junction; the preparation method comprises the following steps that a silicon wafer is subjected to single-side texturing, and a tunneling oxidation layer SiO2 and a P-doped polycrystalline silicon layer are prepared on the texturing surface to form an N+ emittingjunction; selective etching is carried out to remove the P-doped polycrystalline silicon layer wound on the back surface, and a front phosphorus-doped polycrystalline silicon layer is activated, and selective doping is carried out on the surface of the emitter junction; an AL2O3 layer is deposited on the back surface of the silicon wafer, and a hydrogenated amorphous silicon nitride passivation antireflection layer is deposited on the front surface and the back surface of the silicon wafer separately; selective patterning and film opening are carried out on the back surface passivation layer;and silk-screen printing is performed on a back surface aluminum electric field, a back electrode and a front surface metal electrode grid line to form front and back electrode metalized ohmic contact. Compared with the prior art, the preparation method disclosed by the invention has the advantages that the emitter junction surface compounding of the existing single-crystal PERC battery is improved, and the Voc of the battery is greatly improved; and the method is compatible with an existing PERC mass production path and is a key development direction of a next-generation high-efficiency single-crystal PERC battery.

The invention discloses a device and a method for measuring the concentration of <222>Rn and <220>Rn synchronously by adopting electrostatic collection and solid nuclear track. The measurement device consists of a box body, a third filter, a first aluminum diaphragm, a first solid nuclear track detector, a first filter, a second solid nuclear track detector, a second aluminum diaphragm, a second filter, a high-voltage module, a battery, a base plate and a frame-shaped seal ring. In measurement, the high-voltage module in the measurement device is started up, so that high-voltage electrostatic fields are formed between the inner surface of a first measurement cavity of the measurement device and the surface of the first solid nuclear track detector as well as between the inner surface of a second measurement cavity and the surface of the second solid nuclear track detector respectively, and then the measurement device is placed in a measurement environment to measure the concentration of <222>Rn and <220>Rn in air, and the measurement time is T. After the measurement process, the first solid nuclear track detector and the second solid nuclear track detector are taken off, and are subjected to chemical etching, and the concentration of <222>Rn and <220>Rn in the environment is obtained by calculation.

The invention discloses a self-driven Schottky junction near-infrared photoelectric detector based on a silicone nanowire array and a preparation method of the photoelectric detector.The preparation method is characterized in that the silicone nanowire array is formed on the surface of a silicon substrate through a silver-assisted chemical etching method; the outer surfaces of silicone nanowires are evenly covered with metal copper films through a liquid phase reduction reaction, and Schottky junctions are formed by the metal copper films and the silicone nanowires; the back face of the silicone substrate is coated with an In/Ga conductive glue layer in a brushed mode, and the In/Ga conductive glue layer and the silicone substrate are in ohmic contact.According to the Schottky junction near-infrared photoelectric detector, the preparation process is simple and easy to carry out, and the performance of the detector is excellent.

An optical device includes a unitary substrate of optically transparent material. The unitary substrate has formed therein at least one collection lens and channel, the channel for receiving an optical fibre and arranged to align the optical fibre inserted therein such that the collection lens couples light collected by the collection lens into the optical fibre.

The invention relates to an intelligent power supply device for a low-temperature etching-free iron plating process, which is characterized in that three-phase alternating current supplies power for a silicon controlled rectifying circuit; an input end of the silicon controlled rectifying circuit is connected with a signal output end of a pulse signal generator; an output end of the silicon controlled rectifying circuit is connected with low-temperature iron plating loads; and signal output ends of a synchronizing signal generator and a PLC (programmable logic controller) are respectively connected with a signal input end of the pulse signal generator. The invention also discloses a power supply method of the intelligent power supply device. Phase-shifting control signals generated by the PLC are used for controlling the pulse signal generator, thus adjusting AC (alternating-current) and DC (direct-current) amplitudes; and AC and DC switching signals generated by the PLC are used for mutually switching between AC output and DC output. The power supply device is used for setting output duration of DC signals and output duration of AC signals, can be controlled automatically without manual operations, and is strong in reliability of power supply and convenient to operate.

A plasma treatment method for etching a portion of an isolating layer present on a surface of an opening in a semiconductor structure is provided. The method comprising: providing a semiconductor structure comprising an opening in an external surface, wherein the external surface of the semiconductor structure and surfaces defining the opening are at least partially covered by the isolating layer, introducing a treatment gas to the semiconductor structure and the isolating layer, the treatment gas comprising a first component providing forming of a protective polymer during plasma treatment and second component providing etching of the isolating layer during plasma treatment, and treating the semiconductor structure and the isolating layer by inducing a plasma in the treatment gas, such that a protective polymer layer is formed on at least portions of the isolating layer present on the external surface of the semiconductor structure and on at least portions of the isolating layer present on upper portions of sidewalls of the opening, thereby protecting the portions of the isolating layer where the protective polymer layer is being formed, from the plasma, wherein portions of the isolating layer being exposed to the plasma are etched.

The invention discloses an etching method for the diffusion layer of a crystalline silicon solar battery sheet. First, the silicon sheet that has been diffused and doped is put into a tubular thermal oxidation furnace, and a silicon sheet is deposited on the front side of the silicon sheet by a chemical vapor deposition method. layer of silicon dioxide film; place the silicon chip in the mixed solution of phosphoric acid and nitric acid to fully react the silicon chip with the solution, wherein the molar ratio of phosphoric acid to nitric acid is phosphoric acid: nitric acid = 2-5:10; Put the chip into hydrofluoric acid solution, remove the silicon dioxide film layer on the surface of the silicon chip, and then rinse it with deionized water. The etching method of the invention has the advantages of simple process, low equipment requirements, easy monitoring of the etching process, high production efficiency, and can effectively reduce the number of low-efficiency cells caused by etching.

This invention relates to non crystal diamonds film electrode with phosphor and its process method, which solves the problems of non crystal diamonds film low conductive property and large stress and bad basic sticking force and comprises the following steps: a, clearing base; b, ion etching; c, flowing mixture gas; d, using filter cathode vacuum arc deposition system for film deposition; e, connecting wires; f, electricity chemical process to get the electrode.

The invention relates to a method for arranging a circulating pump in a fluidized bed hydrogenation device and belongs to the technical field of petrochemical engineering and coal chemical industry. The method for arranging the circulating pump in the fluidized bed hydrogenation device disclosed by the invention comprises the following steps: (1) removing solid residues from inferior heavy oil and dehydrating; (2) mixing the inferior heavy oil treated in the step (1) with hydrogen, and feeding the mixed gas into a fluidized bed hydrogenation reactor; (3) feeding the reaction product obtained in the step (2) into a high-pressure hot separator for flashing so as to obtain high fraction hot gas and high fraction hot oil; and (4) delivering the high fraction hot gas and one part of the high fraction hot oil obtained in the step (3) to a downstream treatment facility, pressurizing the other part of the high fraction hot oil by a circulating pump, and feeding to the bottom of the first fluidized bed reactor. According to the method disclosed by the invention, the investment of the device is reduced, the interior part design of the reactor is simplified, the mounting height of the reactor is reduced, and the engineering problem that gas etching of the circulating pump is easily caused is solved.

The invention relates to a method for preventing abnormal chip etching caused by damage to parts. The method comprises the following steps of: placing the chip to be etched on a dry type etching machine station, wherein a preset time segment and a preset standard are set in the machine station; and comparing values of measured parameters with the preset standard in the whole process of the dry type etching of the chip, and if the average value of the measured parameters during the preset time segment is higher than the preset standard, automatically stopping the dry type etching process by the machine station. By adopting the method, the abnormity of a radio frequency generator of the machine station can be known in time, so that the probability of generating unqualified products is reduced.

The invention provides an alignment method of a photoetching process. The method comprises the following steps: providing a base which comprises a substrate, a first functional pattern, an alignment mark and a filling medium which are formed on the substrate, the upper surfaces of the first functional pattern, the alignment mark and the filling medium being in a first plane; forming a groove in the outer side of the alignment mark, and forming an opening of the groove in the first plane; forming a second functional layer on the first plane, the second functional layer forming a conformal topological structure on the groove; and detecting the alignment mark according to the conformal topological structure, and completing photoetching and etching of the second functional layer. According tothe invention, the concave-convex structure is formed around the alignment mark, and the conformal topological structure is formed on the second functional layer, so that the position of the alignmentmark under the opaque film can be identified through the conformal topological structure, and accurate photoetching alignment is realized.

The invention provides a method for rounding the top of a trench. The method comprises the following steps of: forming a hard mask layer on a substrate and defining a trench region pattern by using aphotoetching process; etching the hard mask layer according to the trench region pattern, wherein the upper surface of the substrate is an etching stop layer; carrying out wet etching on the substratealong the side wall of the hard mask layer to form the shallow region trench of the substrate; continuously etching the substrate along the side wall of the hard mask layer by adopting a dry etchingprocess to form a deep region trench communicating with the shallow region trench of the substrate; removing the hard mask layer, and performing a filleting process on the top of the trench; and performing sacrificial oxidation on the trench, and further rounding the top of the trench. According to the method, after the hard mask layer is opened, one-step wet etching is firstly carried out, then trench etching is carried out, the hard mask layer is removed through wet etching after trench etching, then filleting is carried out on the trench through a filleting process, the effect of filletingthe top of the trench can be achieved, the process is simplified, and the production cost is reduced.

The invention discloses an automatic line body for front-section printing of a touch screen. The automatic line body comprises an upper etching process section, a lower etching process section, a lower silver paste process section, a lower insulation process section, an upper silver paste process section and a cutting process section which are sequentially connected and directly mounted on the ground of a factory building, wherein the upper etching process section is used for processing an upper etching line, the lower etching process section is used for processing a lower etching line, the lower silver paste process section is used for screen printing of lower silver paste, the lower insulation process section is used for screen printing of lower insulation, and the upper silver paste process section is used for screen printing of upper silver paste. According to the automatic line body, existing single-machine equipment with various functions is organically combined and changed into the automatic line body, a manual operation part in the production process is omitted, the personnel intervention and contact frequency is reduced, thus, the probability that a product is scratched and collided in the production process is reduced, and the capacity and the efficiency are improved. Meanwhile, the automatic line body for front-section printing of the touch screen has high mounting flexibility and adaptability, can be flexibly arranged and mounted according to actual conditions of the production factory building, reasonably utilizes conditions of the production factory building, is flexible in planning and layout and has high universality, adaptability and practicability.

The method comprises: ventilating the silane and nitrous oxide gas or the silane and ammonia gas into the cavity of high density plasma body to form a layer of silicon nitride film in the cavity of high density plasma body. By using the invention, the deposition and the etching can be made at same time, and the deposition tip can be removed at the time of etching to increase the filling capacity in a sub-region.

The invention belongs to the technical field of etching antennas, and particularly relates to a corrosion inhibitor for reducing lateral etching of etching antennas. The corrosion inhibitor is prepared from the following raw materials in parts by weight: 3-7 parts of urotropine (hexamethylenetetramine), 2-5 parts of thiourea, 16-28 parts of chlorinated poly (N-carboxymethyl-4-vinyl pyridine) salt,7-10 parts of EDTA (ethylene diamine tetraacetic acid), 6.5-10.5 parts of maleic anhydride, 4-8 parts of citric acid, 6-8 parts of ascorbic acid, 8-12 parts of sodium percarbonate, 2-5 parts of polyethylene glycol and 28-48 parts of deionized water. The corrosion inhibitor is non-toxic and harmless, the overall etching speed can be increased, meanwhile, the local etching speed is decreased, lateral etching can be reduced as much as possible while it is guaranteed that etching is thorough in the process of overall etching, and the etching process can be operated stably and evenly.