A kind of etching method of diffusion layer of crystalline silicon solar cell

[0017] Step 1: Put the silicon wafer on which the diffusion layer has been formed into a thermal oxidation furnace, and deposit a silicon dioxide film with a thickness of 65 nm on the surface of the silicon wafer.

[0018] Step 2: Prepare a mixed solution of phosphoric acid and nitric acid with a molar ratio of 3:10, put the silicon chip into it for 55 seconds, so that the silicon chip and the solution fully react.

[0019] Step 3: Put the silicon chip into a 20% hydrofluoric acid solution, soak it for 60 seconds, then take it out and rinse it with deionized water for about 60 seconds.

[0020]

[0022] Step 1: Put the silicon wafer on which the diffusion layer has been formed into a thermal oxidation furnace, and deposit a silicon dioxide film with a thickness of 62nm on the surface of the silicon wafer.

[0023] Step 2: Prepare a mixed solution of phosphoric acid and nitric acid with a molar ratio of 2:10, put the silicon chip into it for 60 seconds, so that the silicon chip and the solution fully react.

[0024] Step 3: Put the silicon chip into a 20% hydrofluoric acid solution, soak it for 60 seconds, then take it out and rinse it with deionized water for about 60 seconds.

[0025]

[0027] Step 1: Put the silicon wafer on which the diffusion layer has been formed into a thermal oxidation furnace, and deposit a silicon dioxide film with a thickness of 63nm on the surface of the silicon wafer.

[0028] Step 2: Prepare a mixed solution with a molar ratio of phosphoric acid and nitric acid of 5:10, put the silicon chip into it for 62 seconds, so that the silicon chip can fully react with the solution.

[0029] Step 3: Put the silicon wafer into a 20% hydrofluoric acid solution, soak for 60 seconds, then take it out and rinse it with deionized water for about 60 seconds.

[0030]