727results about "Semiconductor devices" patented technology

Flip-flops in a monolithic three-dimensional (3D) integrated circuit (IC)(3DIC) and related method are disclosed. In one embodiment, a single clock source is provided for the 3DIC and distributed to elements within the 3DIC. Delay is provided to clock paths by selectively controllable flip-flops to help provide synchronous operation. In certain embodiments, 3D flip-flop are provided that include a master latch disposed in a first tier of a 3DIC. The master latch is configured to receive a flip-flop input and a clock input, the master latch configured to provide a master latch output. The 3D flip-flop also includes at least one slave latch disposed in at least one additional tier of the 3DIC, the at least one slave latch configured to provide a 3DIC flip-flop output. The 3D flip-flop also includes at least one monolithic intertier via (MIV) coupling the master latch output to an input of the slave latch.

A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.

A lighting device comprising first, second and third groups of solid state light emitters, the first group emitting light having a dominant wavelength of 430 to 490 nm, the second group at 525 to 575 (in some devices 540 to 575 nm), the third group at 610 to 640 nm. In some devices, wavelength of light from emitters in first and second groups, and light from second and third groups, differs by at least 70 nm. Some devices emit light having CRI Ra of at least 70 when first, second and third groups of emitters are illuminated. Also, a lighting arrangement comprising first, second and third groups as above, in addition to a fourth emitter emitting light of dominant wavelength outside the ranges for the first, second and third groups, and not more than 10 nm different from a dominant wavelength of a color on an item to be illuminated.

A mirror or other reflecting surface is used for collecting and reflecting incident solar radiation. The mirror is supported for independent motion about a pair of axes. An accelerometer generates signals representative of an amount and direction of motion of the mirror about each of the axes. Motors or other drive mechanisms independently drive the mirror about each of the axes. A tracking device provides information about the current position of the Sun. A control is connected to the accelerometer, the motors and the tracking device for maintaining a predetermined optimum orientation of the mirror as the Sun moves across the sky. Position sensors that sense the position of the mirror relative to the earth's magnetic field may also be employed.

LED lamp assembly particularly adapted for automotive applications that utilizes one or more standard replaceable LED bulbs with changeable optics to make multiple beam patterns. Preferably the optic is molded and easily replaced. An electric module is mounted directly under the LED to facilitate the electrical connection and provide good thermal contact. The LED light source(s) and interchangeable optic are positioned and sealed in the base of a main reflector or the vehicle hull by means well known to those skilled in the art.

A display apparatus including a light emitting diode part including a plurality of regularly arranged light emitting diodes, and a TFT panel part configured to drive the light emitting diode part. The light emitting diode part includes a transparent electrode, the light emitting diodes regularly disposed on a first surface of the transparent electrode and electrically connected to the transparent electrode, a plurality of first reflective electrodes disposed at sides of the light emitting diodes, surrounding the light emitting diodes, and electrically connected to the transparent electrode, and a plurality of second reflective electrodes electrically connected to the light emitting diodes, respectively, and reflecting light emitted from the light emitting diodes.

In the case where high speed differential signals are transmitted in differential transmission lines through via holes with open-stubs, signal waveforms are distorted due to impedance mismatch in the open-stubs of the via holes, thus causing jitter, which has become an issue of high speed signals. For differential transmission lines that pass through via holes with open-stubs, a degree of coupling of the lines is decreased while the differential characteristic impedance is made constant. Thereby, the effects of backward cross talk noise caused by the coupling can be minimized, and thus jitter can be suppressed.

An image pickup device is disclosed that has little deformation caused by thermal expansion of a transparent resin for sealing an image pickup element. The image pickup device includes an image pickup element having a light receiving surface, a micro-lens for condensing incident light to the image pickup element, a first transparent plate disposed on the light receiving surface of the image pickup element with the micro-lens in between, a transparent resin that seals the image pickup element and the first transparent plate, and a second transparent plate disposed on the transparent resin to face the first transparent plate.

An upper electrode is formed on one surface of a semiconductor multilayer structure including a light emitting layer. An interface electrode is formed at a region of another surface of the semiconductor multilayer structure except a region right under the upper electrode. A center of the interface electrode coincides with a center of the upper electrode. At least a part of the interface electrode has a similar shape to a shape of an outer periphery of the upper electrode. A current blocking layer is formed at another region of another surface of the semiconductor multilayer structure except the region where the interface electrode is formed. A reflecting layer for reflecting a part of the light emitted from the light emitting layer is electrically connected to the interface electrode. A conductive supporting substrate is electrically connected to the semiconductor multilayer structure.

A polymer resin composition, a method for forming a pattern using the polymer resin composition, and a method for fabricating a capacitor using the polymer resin composition are disclosed. The polymer resin composition includes about 75 to 93 percent by weight of a copolymer prepared from benzyl methacrylate, methacrylic acid, and hydroxyethyl methacrylate; about 1 to 7 percent by weight of a cross-linking agent; about 0.01 to 0.5 percent by weight of a thermal acid generator; about 0.01 to 1 percent by weight of a photoacid generator; about 0.00001 to 0.001 percent by weight of an organic base; and a solvent.

A luminescent solar collector is provided comprising a substrate and a light energy converter, such as a photocell, operatively connected thereto. The substrate is molded from a thermoplastic composition comprising a polymer and a fluorescent dye or quantum dot dispersed therein. The polymer comprises a polycarbonate unit and a polyester unit derived from the reaction of isophthalic acid, terephthalic acid, and resorcinol (ITR). In further embodiments, the substrate comprises two or more layers including a fluorescent layer and an overcoat layer. The fluorescent layer comprises the fluorescent dye or quantum dot and a polycarbonate polymer. The overcoat layer comprises the ITR unit. The substrate, in single layer or multiple layer form, has reduced haze levels over a prolonged period of time.

A supported graphene device comprises at least one graphene feature of 1 to about 10 graphene layers having a predetermined shape and pattern, with at least a portion of each graphene feature being supported on a substrate. In some embodiments the device comprises graphene features supported on crystalline semiconductor substrate, such as silicon or germanium. The graphene features on a crystalline semiconductor substrate can be fabricated by forming an amorphous carbon doped semiconductor on the crystalline semiconductor substrate and then epitaxially crystallizing the amorphous semiconductor with carbon migration to the surface to form a graphene feature of one or more graphene layers. The epitaxy can be promoted by heating the device or by irradiation with a laser. Methods for fabricating graphene on a variety of substrates, over large areas with controlled thicknesses employ ion implantation or other doping techniques followed by pulsed laser annealing or other annealing techniques that result in solid phase regrowth are presented.

A multilayer wiring board capable of feeding sufficient electric power to a circuit element, such as an IC chip. In one embodiment of the present invention, a multilayer wiring board is comprised of: a core board; a build up layer disposed on an upper surface of the core board; a build up layer disposed on a lower surface of the core board; and a power supply structure embedded in a through hole penetrating the core board and the build up layers. The power supply structure is comprised of: a conductive metal rod made of copper as a main material; a conductive metal tube made of copper as a main material and provided coaxially with the conductive metal rod; and an insulating material filling a gap between the conductive metal rod and the conductive metal tube.

The invention discloses an organic light emitting display panel and a manufacturing method. The organic light emitting display panel comprises a substrate base plate; a light emitting element layer, located on a substrate base plate and provided with a plurality of first grooves; and a packaging layer, located above the light emitting element layer and filled in the plurality of first grooves. According to the invention, the plurality of first grooves are arranged in the light emitting element layer so that the packaging layer packaged above the light emitting element layer is filled in the plurality of first grooves, that is, a pinning structure is formed between the packaging layer and the light emitting element layer, thereby enhancing the adhesion between the packaging layer and the light emitting element layer and avoiding the stripping between the packaging layer and the light emitting element layer in a bending process.

A solar cell includes a doped layer disposed on a first surface of a semiconductor substrate, a doped polysilicon layer disposed in a first region of a second surface of the semiconductor substrate, a doped area disposed in a second region of the second surface, and an insulating layer covering the doped polysilicon layer and the doped area. The insulating layer has openings exposing portions of the doped polysilicon layer and the doped layer, and the doped polysilicon layer and doped layer are respectively connected to a first electrode and a second electrode through the openings. The semiconductor substrate and the doped layer have a first doping type. One of the doped polysilicon layer and the doping area has a second doping type, and the other one of the doped polysilicon layer and the doping area has the first doping type which is opposite to the second doping type.

A solar-energy conversion (SEC) array (24) and method of operation are presented. The array (24) has an aim direction (48) substantially coincident with a solar direction (50) when the array (24) is operational. The array (24) is made up of an array-support structure (26), and a plurality of SEC clusters (28). Each cluster (28) is made up of a number of SEC units (44) and a single cell-support structure (32). Each SEC unit (44) is made up of a concave mirror (30) coupled to the array-support structure (26), and a cell assembly (34). The cell assembly (34) is made up of a cell housing (68) containing an SEC cell (72), and a passive heat-extraction unit (70) thermally coupled to the cell (72) and configured to extract and dissipate heat. The cell-support structure (32) is made up of a support column (56) coupled to the array-support structure (26), and individual support arms (60) coupling each of cell assemblies (34) to the support column (56).

Disclosed is a porous electrode comprising a porous film (A) with through pores and an electrically conducting material selected from the group consisting of conductor and semiconductor, the porous film (A) having an average pore size d1 of from 0.02 to 3 μm and a porosity of from 40 to 90%, the electrically conducting material being filled in the through pores of the porous film (A). A dye-sensitized solar cell and an electric double layer capacitor including the porous electrode as a constituent are also disclosed.

The present invention provides a display panel of a flat panel display device of a four-color structure in which color mixture may not occur in a white sub-pixel and a method for fabricating the same. The display device includes first, second, third, and fourth sub-pixels, and each sub-pixel includes a thin film transistor. A color filter is formed adjacent to the thin film transistor of each of the first, second, and third sub-pixels, a planarization layer is formed on the color filters, and a pixel electrode is connected to each thin film transistor.

Disclosed is an organic electroluminescent device (organic EL device) that is improved in luminous efficiency, sufficiently secures driving stability, and has a simple configuration. This organic EL device comprises organic layers between an anode and a cathode piled one upon another on a substrate and at least one organic layer selected from a light-emitting layer, a hole-transporting layer, an electron-transporting layer, and a hole-blocking layer contains a carbazole compound represented by the following formula (1). In the case where the light-emitting layer of the organic electroluminescent device contains a phosphorescent dopant and a host material, it is the carbazole compound that is contained as the host material. In formula (1), X is C—Y or a nitrogen atom; Y is a hydrogen atom, an alkyl group, a cycloalkyl group, or an aromatic group; n is an integer of 2 to 4: A is an n-valent aromatic group; L is a direct bond or a divalent aromatic group; and R is a hydrogen atom, an alkyl group, or a cycloalkyl group.