78results about "Polycrystalline material growth" patented technology

A process for the manufacture of a gallium rich gallium nitride film is described. The process comprises (a) preparing a reaction mixture containing a gallium species and a nitrogen species, the gallium species and the nitrogen species being selected such that, when they react with each other, gallium nitride is formed; and (b) growing the gallium rich gallium nitride film from the reaction mixture, by allowing the gallium species to react with the nitrogen species and to deposit gallium nitride on a substrate selected from the group consisting of silicon, glass, sapphire, quartz and crystalline materials having a lattice constant closely matched to gallium nitride, including zinc oxide, optionally with a zinc oxide buffer layer, at a temperature of from about 480° C. to about 900° and in the presence of a gaseous environment in which the partial pressure of oxygen is less than 10⁻⁴ Torr, wherein gallium atoms to nitrogen atoms in the gallium rich gallium nitride film is from 1.01 to 1.20. The invention also provides the option of annealing the gallium rich gallium nitride film at a temperature of from about 20° C. to about 650° C. and for a time sufficient to decrease the resistivity of the film so that it becomes electrically conductive, for instance to a resistivity below 100 ohm·cm.

A method for growing a crystal of an Al-containing III-V group compound semiconductor by the conventional HVPE method, characterized in that it comprises a step of reacting Al with hydrogen halide at a temperature of 700° C. or lower to form a halide of Al. The method has allowed the suppression of the formation of aluminum chloride (AlCl) or aluminum bromide (AlBr) reacting violently with quartz, which is the material of a reaction vessel for the growth, resulting in the achievement of the vapor phase growth of an Al-containing III-V group compound semiconductor at a rate of 100 microns/hr or more, which has lead to the mass-production of a substrate and a semiconductor element having satisfactory resistance to adverse environment.

The present invention provides a process for forming a bulk monocrystalline gallium nitride by using supercritical ammonia. The process comprises the steps of forming a supercritical solvent containing ion or ions of alkali metals in an autoclave; and dissolving a monocrystalline gallium nitride prepared by flux methods as a feedstock in this supercritical solvent to form a supercritical solution, and simultaneously or separately recrystallizing gallium nitride on the face of a seed.

The present invention relates to an apparatus and method for growing a high melting point single crystal having a predetermined orientation, which is grown from a culture rod (3) by a floating zone method or a suspension zone method. The device comprises: culture rods (3) and crystal nuclei (4), a strip-shaped resistance heating type heating strip (6) provided with at least one opening is installed between its ends and next to it, and it is heated To the crystal melting temperature, so as to form the melting zone (5), drive mechanism (8, 11), so that relative movement occurs between the heating belt (6) and the crystal nucleus (4) and the culture rod (3) that are installed next to the heating belt , the molten liquid material of the culture rod (3) is obtained through each opening of the heating belt, and causes single crystal growth on the crystal nucleus (4) by cooling, and another heating device (15, 16), which is arranged at the melting The vicinity of the zone (5) in order to set the temperature gradient within the range of the melting zone (5). In order to reduce the temperature gradient in the melting zone, said further heating device (15, 16) comprises at least one heating coil (17, 19), which is driven with radio frequency, wherein the heating strip (6) and the respective heating coil are thus mounted opposite each other (17, 19) so that radio frequency radiation is coupled on the heating strip in order to generate an additional inductive heat input in the heating strip and to set a temperature gradient across the melting zone (5). This enables an inductive heat input into the heating strip, which can be varied or varied in a targeted manner.

The invention discloses a crucible and a substrate slice for growing and casting monocrystalline silicon, which can effectively reduce the using amount of seed crystal in the process of casting the monocrystalline silicon and have the advantages of simple structure and low cost. The bottom of the crucible is provided with a plurality of continuous hopper-shaped cap-like structures, a plurality of continuous cellular structures or a plurality of continuous hemispherical structures. The external wall of the substrate slice has a square structure, while the inner wall has the plurality of continuous hopper-shaped cap-like structures, the plurality of continuous cellular structures or the plurality of continuous hemispherical structures.

The invention provides a method of forming a dense, shaped article, such as a crucible, formed of a refractory material, the method comprising the steps of placing a refractory material having a melting point of at least about 2900° C. in a mold configured to form the powder into an approximation of the desired shape. The mold containing the powder is treated at a temperature and pressure sufficient to form a shape-sustaining molded powder that conforms to the shape of the mold, wherein the treating step involves sintering or isostatic pressing. The shape-sustaining molded powder can be machined into the final desired shap and then sintered at a temperature and for a time sufficient to produce a dense, shaped article having a density of greater than about 90% and very low open porosity. Preferred refractory materials include tantalum carbide and niobium carbide.

The invention belongs to the technical field of diamond preparation and discloses a method and a system for splicing and growing single-crystal diamonds. The method comprises the following steps: putting a seed crystal into a plasma CVD equipment cavity, sucking off ultimate pressure, introducing hydrogen, inputting energy, generating power discharge, and adjusting the temperature of the seed crystal; introducing a methane (or carbon-containing gases such as acetone and carbon dioxide) gas, growing the seed crystal for 1-100 hours at 800-1000 DEG C, and the like. According to the method, single-crystal diamonds are grown by using a CVD method through spicing growth, the purpose that the single-crystal diamonds is grown in a large scale is achieved, synthesis sizes directly depend on sizesof the seed crystals since conventional growth of single-crystal diamonds can be only longitudinally amplified on original seed crystals, two single-crystal diamond flakes of a same size and approximate thicknesses are fixed and spliced and grown simultaneously, then a large-size single-crystal diamond is grown, and bottle neck problems are solved.

The invention discloses a novel single-crystal furnace for a zinc cadmium telluride single crystal and a growth process. A furnace body and a heating power supply are provided; a quartz tube is arranged in the hearth; a crucible is arranged in the quartz tube; a seed crystal cavity is form on a lower part in the crucible; a support frame is arranged below the quartz tube; sealing plugs are arranged at an upper end and a lower end of the hearth; nine heating areas are arranged in the hearth of the furnace body from top to bottom in sequence; each heating area is provided with an electrode which communicates with a power supply cabinet, a cable and a self-control switch; a temperature control system is provided further. The novel single-crystal furnace has the advantages of suitability for growth of the zinc cadmium telluride single crystal, omission of mechanical movement, formation of a no-vibration growth environment, realization of segmental flexible control of the growth temperature, great reduction in time for heating and smelting materials and receiving the seed crystal, and improvement on the quality and production efficiency of the single crystal. Moreover, the novel single-crystal furnace has the advantages of compact entire structure, small floor area, lower equipment cost, easiness in mounting, programmed control, accurate running, and stable repeatability. By adopting the novel single-crystal furnace, a large-diameter zinc cadmium telluride single crystal can be generated rapidly.

The invention discloses an oxygen atmospheric control making method of a-axle oriental YBCO hyperconductive thick film, which is characterized by the following: utilizing liquid-phase epitaxial device to make high-crystal product; allocating Ba-Cu-O powder according to the rate of Ba and Cu at 3: 5; grinding; sintering; placing in the Y2O3 copple to fuse; obtaining Y-Ba-Cu-O flux; changing 100% pure-oxygen atmosphere in the sealed furnace; adjusting flux temperature in the copple lower than YBCO peritectic fusing temperature by 5-20K; obtaining high-quality a-axle YBCO film on the liquid-phase of (110) single-crystal neodymium gallium acid base.

A silicon single crystal is produced by the CZ process by setting a hydrogen partial pressure in an inert atmosphere within a growing apparatus to 40 Pa or more but 400 Pa or less, and by growing a trunk part of the single crystal as a defect-free area free from the Grown-in defects. Therefore, a wafer the whole surface of which is composed of the defect-free area free from the Grown-in defects and which can sufficiently and uniformly form BMD can be easily produced. Such a wafer can be extensively used, since it can significantly reduce generation of characteristic defectives of integrated circuits to be formed thereon and contribute for improving the production yield as a substrate responding to the demand for further miniaturization and higher density of the circuits.

The invention discloses a seeding mold for growing silicon crystals by using an orientated solidification method and a crystal growing method. The seeding mold is arranged at the internal bottom of a quartz crucible and comprises a seed crystal container and a sealing liquid container, wherein the sealing liquid container consists of cavities connected to the periphery of the seed crystal container and is used for accommodating a sealing substance; and the seed crystal container is provided with a first cavity for accommodating seed crystals. A method for growing monocrystalline silicon/similar monocrystalline silicon by adopting the seeding mold comprises the following steps of: arranging or setting the seeding mold at the bottom of the quartz crucible; arranging the sealing substance and the seed crystals in the sealing liquid container and the seed crystal container respectively; putting a silicon raw material into the quartz crucible; and growing monocrystals/similar monocrystals by adopting orientated solidification. By adopting the seeding mold and the crystal growing method, the problem of placement of the seed crystals can be solved without changing the structures of the conventional orientated solidification and quartz crucible, dislocation of the seed crystals in the seeding process is eliminated, and the spontaneous nucleation phenomenon of melt from the bottom wallface of the crucible is avoided. The seeding mold has low cost and is easy to process.

The invention relates to a method for preparing nano-scale alpha-type calcium sulfate hemihydrate whiskers in a reverse microemulsion system under normal pressure by using raw phosphogypsum as a raw material, and belongs to the technical field of preparation of inorganic functional materials. A fatty primary alcohol, a surfactant, and water are adopted to construct the reverse microemulsion reaction system, the raw phosphogypsum is added in a proportion, after uniform stirring, a PH regulator is added to control the PH value, and a crystal accelerator is added in a proportion; the reverse microemulsion reaction system is heated to a control temperature, and alpha-type calcium sulfate hemihydrate whiskers are formed by crystallization in nano-scale water droplets; and after filtering, washing and drying, the nano-scale alpha-type calcium sulfate hemihydrate whiskers having a high added value and having a diameter range of 200 nm to 500 nm are formed. The method has the advantages of simple process, high operability, short preparation time, low energy consumption, high yield, multiple times of use of the reverse microemulsion and washing water, high product added value, and the like,and is of great significance to ecological environment protection, natural gypsum resource saving, promotion of high value-added resource utilization of the phosphogypsum.

The invention belongs to a synthesis method of nano material, in particular to a synthesis method of platy-ZnSe fluorescent nano monocrystal, which comprises: under inert gas protection, heating and stirring or ultra-dissolving elementary substance Se in trioctylphosphine to obtain Se precursor; dissolving Zn source in octadecene, and adding activator long-chain alkylamines under inert gas protection to carry out 'activation' treatment; then introducing template agent long-chain alkyl sulfhydryl to carry out 'templated' treatment to activated Zn precursor, and finally heating up to the synthesis reaction temperature (300 to 350 DEG C) under inert gas protection; quickly adding the Se precursor in the Zn precursor, and reacting for a certain time to obtain original solution crude product of the platy-ZnSe fluorescent nano monocrystal. The final product of clear solvent of platy-ZnSe fluorescent nano monocrystal can be obtained through adding mixed solution consisting of high-polar organic solvent and low-polar organic solvent to wash and centrifuge, and finally dissolving with the low-polar organic solvent. The method has the advantages of simple reaction system, easy availability of raw material, little environment pollution, good crystallinity and high fluorescent quantum yield.

A method utilising microwave plasma chemical vapour deposition (MPCVD) process of producing electronic device grade single crystal diamond comprising of: (a) selecting a diamond seed or substrate having a pre-determined orientation, (b) cleaning and/or etching of non-diamond phases and other induced surface damages from the diamond seed or substrate, whereby this step can be performed one or more times, (c) growing a layer of extremely low crystal defect density diamond surface on the cleaned/etched diamond seed or substrate, whereby this step can be performed one or more times, and (d) growing electronics device grade single crystal diamond on top of the layer of the low crystal defect density diamond surface.

The invention provides a crucible guide die structure for growing an extra-thick monocrystal alumina wafer. The crucible guide die structure has the advantages of capacity of growing 8 to 18-mm type extra-thick monocrystal alumina wafers, simple die core structure of each crystallizer, capacity of controlling and adjusting the temperature gradient of crystallization table-board wafers, and guarantee of no bubbles, no growth striations, low internal stress, difficult cracking and high qualification rate of crystal finished products. The crucible guide die structure comprises a crucible, wherein the crucible is arranged in a heater through a grip; the heater is arranged in an electrode plate; a thermal insulation screen is arranged outside the heater; the crystallizers are arranged in the crucible; a seed crystal is arranged above the crystallization table-board of each crystallizer; the seed crystal is connected with a seed crystal coupling sleeve through a connection structure; the crucible has a cuboid shape or a rectangular strip shape with two arc ends; the crystallizers are arranged along the central line of the length direction of the crucible sequentially; and the heater has a cuboid shape or a rectangular strip shape with two arc ends. The crucible guide die structure is characterized in that: each crystallizer comprises a die core; the die core comprises two inversed L-shaped molybdenum plates; the end parts of the two inversed L-shaped molybdenum plates are hermetically welded with each other; and the two inversed L-shaped molybdenum plates are in symmetrical rivet weld connection with each other through a molybdenum rod.

The inorganic scintillator of the invention is an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising a metal oxide containing Lu, Gd, Ce and Si and belonging to space group C2/c monoclinic crystals, and which satisfies the condition specified by the following inequality (1A), wherein A_Lu represents the number of Lu atoms in the crystal and A_Gd represents the number of Gd atoms in the crystal.

{A_Lu/(A_Lu+A_Gd)}<0.50  (1A)

A low temperature poly-silicon thin film element, method of making poly-silicon thin film by direct deposition at low temperature, and the inductively-coupled plasma chemical vapor deposition equipment utilized, wherein the poly-silicon material is induced to crystallize into a poly-silicon thin film at low temperature by means of high density plasma and substrate bias voltage. Furthermore, the atom structure of the poly-silicon thin film is aligned in regular arrangement by making use of the induction layer having optimal orientation and lattice constant close to that of the silicon, thus raising the crystallization quality of the poly-silicon thin film and reducing the thickness of the incubation layer.

Methods and systems related to an improved controlled heat extraction system for crystal growth, such as sapphire crystal growth are described, including methods and systems for mechanical probe-based and pyrometer-based inspection and automation processes, methods and systems for avoiding fusion of components, methods and systems for purging an inspection window, and methods and systems related to alternative crucible shapes.

A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.

The invention relates to a crystal growth for Te-Zn-cadmium crystal ingot. The process includes the following steps: according to the selected superiority crystal seeding direction to make seed crystal block or stick in certain specification, adding the seed crystal into silica tube bottom cavity, and the upper adding to Te-Zn-cadmium alloy crystal ingot to grow Te-Zn-cadmium crystal ingot. The invention would improve crystallizing rate from 40% to 65%, and yield from 10% to 20%, and effectively decrease producing cost.

Provides is a compound semiconductor substrate about which the thickness of its nitride semiconductor single crystal layer can be made large while the generation of cracks, crystal defects or the like is restrained in the nitride semiconductor single crystal layer. The substrate has a first intermediate layer 110 formed on a Si single crystal substrate 100 having a crystal plane orientation of {111}. In the layer 110, a first metal compound layer 110a made of any one of TiC, TiN, VC and VN, and a second metal compound layer 110b made of any one of compounds which are different from the compound of the first metal compound layer out of TiC, TiN, VC and VN are laminated in this order alternately each other over the Si single crystal.

The invention relates to a circulating mass crystal continuous culture apparatus. The circulating mass crystal continuous culture apparatus comprises a culture tank and a continuous filter device; the continuous filter device comprises a hot water bath system and a cold water bath system; a first stirrer and a temperature controller are arranged in the culture tank; the hot water bath system comprises a hot water tank, and a first S-shaped coil pipe, a hot water bath receiving tank, a delivery pump, a first filter and a second filter which are all arranged in the hot water tank and orderly communicated with each other by use of catheters; a second stirrer is further arranged in the hot water tank; and the first S-shaped coil pipe is communicated with the culture tank by use of a catcher. The circulating mass crystal continuous culture apparatus is reasonable in structure, and prone to control even temperature and concentration and improve the quality of the crystals; and rapid growth of large-size good-quality KDP and DKDP crystals is realized and the yield of the crystals is increased.

The invention relates to a preparation method of perovskite structure lead titanate single crystal nanoparticles. The method adopts hydrothermal reaction and subsequent high-temperature calcination, a mixed precipitate of titanium and lead ions introduces reactant material of hydrothermal reaction, a potassium hydroxide mineralizer promotes partial crystallization of a product to form precursor powder, then the precursor powder is completely crystallized in a subsequent high-temperature calcination process, therefore, synthesis of perovskite structure lead titanate single crystal nanoparticles is realized. The method provided by the invention has characteristics of simple process, easy control, no pollution and low cost, and is easy for large-scale production. The prepared perovskite structure lead titanate single crystal nanoparticles have high purity, good dispersity, and uniform size.

The invention relates to the field of monocrystalline silicon growth furnaces and aims at providing a mounting plate assembly for a monocrystalline silicon growth furnace. The mounting plate assembly for the monocrystalline silicon growth furnace comprises a connector bolt, a mounting plate and switch assemblies, wherein the switch assemblies comprise a switch assembly A and a switch assembly B; the switch assembly A is used for controlling a secondary furnace chamber and a furnace lid of the monocrystalline silicon growth furnace to move or not; the switch assembly B is used for controlling the secondary furnace chamber to move independently or move together with the furnace lid; by matching of the connector bolt and the mounting plate, the secondary furnace chamber and the furnace lid of the monocrystalline silicon growth furnace can be connected or disconnected. The mounting plate assembly can be used for conveniently and safely taking monocrystalline silicon at any time in the middle, the monocrystalline silicon can be taken out without waiting for the monocrystalline silicon is slowly cooled in the furnace body, and thus, the material cooling time and the residual material reheating time can be saved, the production cost can be lowered, and the production efficiency can be improved.

The invention discloses a method for growing optical crystal. The method comprises the following steps: washing and preparing raw materials, washing and preparing a high pressure kettle and auxiliary pieces inside the high pressure kettle, heating for 28-30 hours according to an optimally designed time-temperature relationship curve, further keeping and controlling the temperature for 115 days according to another optimally designed time-temperature relationship curve, subsequently naturally cooling down to be less than 100 DEG C, and opening the high pressure kettle. As the time-temperature relationship curves in different periods and other details are optimized, a growth process of the optical crystal is relatively more complete, and the use effect is more ideal.