7 results about "Wafer" patented technology

The invention provides an ion implantation device. The device comprises a shielding room, an ion source, an extraction electrode, an analyzer, an analysis diaphragm, a focusing lens, an accelerating tube, a symmetric electrostatic scanning electrode and a uniform magnetic field parallel lens which are successively arranged. A first chamber and a second chamber which are isolated from each other are arranged in the shielding room. A high-voltage bin is arranged in the first chamber. A target chamber is arranged in the second chamber. The ion source, the extraction electrode, the analyzer and the analysis diaphragm are arranged in the high-voltage bin. The accelerating tube is arranged in the first chamber. A first outlet for an ion beam to enter the accelerating tube is formed in the high-voltage bin. The first chamber is provided with a second outlet for the ion beam to enter the symmetric electrostatic scanning electrode. The symmetric electrostatic scanning electrode and the uniformmagnetic field parallel lens are arranged in the second chamber. A target table, an orientation table, a wafer library and at least one manipulator for transferring wafers are arranged in the target chamber. The target chamber is provided with an injection port for the ion beam to be injected into the wafers on the target table. The device provided by the invention has the advantages of simple structure, low cost, convenience for realizing high-energy high-precision injection and the like.

The invention discloses a wafer lifting and drying method and a wafer drying device. The method comprises the steps that a wafer is placed on a supporting part in a cleaning tank through a washing spray rod, wherein the supporting part wings laterally so as to drive the wafer to incline towards a jacking mechanism; the clamping part of a lifting mechanism moves to the lower side of a handover position in advance, and the jacking mechanism opposite to the position of the supporting part pushes the wafer to move upwards; when the center of the wafer passes through the clamping part, the clamping part accelerates to move upwards until the speed of the clamping part is the same as that of the jacking mechanism, and the clamping part and the jacking mechanism move upwards at a uniform speed; when the clamping part and the jacking mechanism uniformly move to the handover position, the clamping part clamps the wafer and continues to move upwards, and the jacking mechanism moves upwards along with the clamping part and then moves downwards to the initial position; and in the process that the wafer obliquely moves upwards, a drying spraying rod sprays drying gas towards the surface of the wafer passing through the drying spraying rod so as to complete lifting and drying of the wafer.

The invention provides a semiconductor structure and a semiconductor device. In the semiconductor structure and the semiconductor device, a first bonding pad group in a first mixed bonding layer of a first chip and bonding pads in a second bonding pad group in a second mixed bonding layer of a wafer are correspondingly bonded; at least one bonding pad in the at least one second bonding pad group is located in the gap between the two adjacent first chips, and the bonding pads located in the gap are exposed, so that the bonding pads can be directly punctured for electrical testing.

The invention relates to the technical field of semiconductor manufacturing and computers, and discloses a semiconductor wafer acceptability-based test method, which comprises the following steps of: transmitting a data file generated by a test machine to a file temporary storage system in real time through a file transfer protocol; reading and analyzing all the files into the database within the time period, and deleting the files after the read files are stored; presetting a task request; according to the formulated data judgment task request, obtaining judged wafer batch test data, presetting an activation rule, performing combined judgment on the wafer batch test data according to the activation rule, and obtaining a judgment result; and feeding back a judgment result to the manufacturing execution management system, performing automatic station crossing, and providing a report interface according to the judgment result to display to a user for viewing. The invention further provides a testing system based on the acceptability of the semiconductor wafer. The processing design and implementation of a mass data set during wafer acceptability testing in the semiconductor manufacturing process are achieved.

The invention discloses a control method for effectively achieving rotation and spraying in a single wafer cleaning process, and relates to the technical field of wafer cleaning, and the method comprises the steps: S1, providing a wafer and a wafer bearing platform, clamping the wafer, enabling the wafer to be located on the wafer bearing platform, and then driving the wafer to rotate through the wafer bearing platform; s2, providing a first chemical cleaning solution, and uniformly spraying the first chemical cleaning solution on the surface of the wafer through reciprocating swing of a first spraying assembly; s3, providing a first ultrapure water cleaning solution, and spraying the first ultrapure water cleaning solution on the surface of the wafer through compound swing of a second spraying assembly; and S4, providing a drying solvent, spraying the drying solvent through a third spraying assembly, and covering the surface of the wafer with the drying solvent. According to the invention, the adhesive force between the cleaning fluid and the wafer surface can be increased, the reaction between the cleaning fluid and the wafer surface is more thorough, and impurities on the wafer surface can be gathered and removed, so that the impurities can be effectively removed.

The invention provides a wafer grinding method. The wafer grinding method comprises the steps that a grinding pad and a grinding pad adjuster are provided; obtaining the service life of the grinding pad; adjusting the pressure intensity of the downward pressure of the polishing pad adjuster to the characteristic pressure intensity according to the used time of the service life of the polishing pad, wherein the characteristic pressure intensity is increased along with the increase of the used time of the service life of the polishing pad; and after the service life of the grinding pad is obtained, the grinding pad is adopted to grind the wafers with the characteristic number, and in the process that the grinding pad is adopted to grind the wafers with the characteristic number, the grinding pad adjuster adopts the characteristic pressure to act on the grinding pad to conduct surface finishing on the grinding pad. According to the wafer grinding method, the surface topography difference of the abraded grinding pad is made up, the surface of the grinding pad is in a uniform abrasion state, it is guaranteed that the grinding liquid can be evenly distributed on the grinding pad in different use stages, and therefore the surface removal rate of different batches of wafers can be maintained within a small fluctuation range, and the grinding efficiency is improved. And the process stability is improved.