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97results about "Electric discharge tubes" patented technology

Light emitting diode illumination apparatus

ActiveUS20060232974A1Effective lightingEfficient heatingCoupling device connectionsPoint-like light sourceLight-emitting diodeMetal substrate
The present invention describes a light emitting diode illumination apparatus made of a light bulb base, a heat dissipating device, a plastic lid, a drive substrate, a metal substrate, a circular insulated base and a casing, and the heat dissipating device is in contact with the metal substrate in normal conditions, such that the heat source produced by each light emitting diode is conducted to the heat dissipating device through the metal substrate and then conducted from the heat dissipating device to the light bulb base for effectively dispersing the heat source and maintaining the light emitting efficiency of each light emitting diode.
Owner:TAIWAN OASIS TECH CO LTD

Power receptacle device with rotatable sockets

ActiveUS7771239B1Coupling device connectionsElectric discharge tubesElectric shock
A power receptacle device has a stationary base and at least one rotating base. The at least one rotating base is mounted rotatably in the stationary base and has at least one socket. The at least one socket is covered when the rotating base is rotated to a position to prevent users from touching the at least one socket and getting electric shock. Further, because the at least one rotating base is rotatable, the at least one socket on the at least one rotating base is exposed and accessible when the at least one rotating base is turned out from the at least one rotating base.
Owner:RITE TECH INDAL

Plasma etching method and plasma treatment apparatus

To realize reduction in size and low cost of a matching circuit in the double-frequency superimposing and impressing system. In this plasma etching apparatus, an upper electrode 18 is connected (grounded) to the ground potential via a chamber 10, while a lower electrode 16 is electrically connected to a first radio frequency power source 40 (for example, 13.56 MHz) and a second radio frequency power source 42 (for example, 3.2 MHz) via a first matching unit 36 and a second matching unit 38. The second matching unit 38 in the lower frequency side is formed of a T-type circuit in which a coil 62 is provided in the final output stage and the coil 62 is also operated as a high-cut filter for shielding the radio frequency (13.56 MHz) from the first radio frequency power source 40.
Owner:TOKYO ELECTRON LTD

Thin film forming device for forming silicon thin film having crystallinity

InactiveUS6192828B1Electric discharge tubesSemiconductor/solid-state device manufacturingElectric dischargeSilicon thin film
An insulating member is interposed between a film formation chamber container and a plasma chamber container. Both containers are adjacent to and communicated with each other. In the film formation chamber container, a base material holder is provided for holding the base material. Raw material gas is introduced into the plasma chamber container and ionized by high frequency electric discharge, to generate plasma. A high frequency electrode and a high frequency electric power source are provided as a plasma generating unit. There is provided a porous electrode 30, the electric potential of which is the same as that of the plasma chamber container 24, between both chambers 22, 24 to partition both chambers. A pulse electric powder source for impressing bipolar pulse voltage, in which a positive polarity portion and a negative polarity portion are alternately repeated, is provided between the base material holder and both of the plasma chamber container and the porous electrode 30, the electric potential of which is the same as that of the plasma chamber container 24.
Owner:NISSIN ELECTRIC CO LTD

Ceramic nanofibers for liquid or gas filtration and other high temperature (> 1000 °c) applications

InactiveUS20100139226A1Electric discharge heatingElectric discharge tubesFiberOxide ceramic
In accordance with the invention there are devices and processes for making ceramic nanofiber mats and ceramic filters for use in high temperature and in corrosive environments. The process for forming a ceramic filter can include electrospinning a preceramic polymer solution into a preceramic polymer fiber having a diameter from about 10 nm to about 1 micron and forming a preceramic polymer fiber web from the preceramic polymer fiber onto a collector. The process can also include pyrolyzing the preceramic polymer fiber web to form a ceramic nanofiber mat having a diameter less than the diameter of the preceramic polymer fiber, the ceramic nanofiber mat comprising one or more of an oxide ceramic and a non-oxide ceramic such that the ceramic fiber mat can withstand temperature greater than about 1000° C.
Owner:UNIV OF FLORIDA RES FOUNDATION INC

Display device and a televsion receiver having the same

InactiveUS20090231506A1Electric discharge tubesPrinted circuit aspectsDisplay deviceElectrical element
A display device is capable of efficiently cooling electronic or electrical components disposed therein without installing a cooling element or member on the electronic or electrical components. In the display device, a ceramic or ceramic-containing layer is formed on any one of a surface of a member placed in proximity to the electronic or electrical component, the surface facing at least the electronic or electrical component, a surface of the member placed in proximity to the electronic or electrical component, the surface opposite to the surface facing the electronic or electrical component, a surface of the electronic or electrical component, and a surface of a circuit board, the surface opposite to a surface of the circuit board on which the electronic or electrical component is mounted.
Owner:SHARP KK

Ion beam emission source for outputting single ionic energy

The invention relates to an ion beam emission source capable of outputting single iron energy so as to solve the problems of the prior art that the extracted ion does not have single energy, the quality of the film is greatly influenced and the repeatability of ion beam assistance is difficult to realize. The technical proposal is as follows: the emission source comprises a gas discharge chamber, a focusing magnetic field generating unit, an ion energy selector and a beam expanding magnetic field generating unit; the gas discharge chamber comprises an anode, a cathode and an extracting grid plate; the ion energy selector comprises an upper magnetic polar plate and a lower magnetic polar plate which are oppositely arranged, and a selecting cylinder which is formed by a first electrode plate and a second electrode plate which are oppositely arranged; polar plate insulating members are arranged among the upper magnetic polar plate, the first electrode plate, the lower magnetic polar plate and the second electrode plate; and the centers of an inlet cover plate and an outlet cover plate at two ends of the selecting cylinder are respectively provided with an energy band limit through hole. Compared with the prior art, the emission source has the advantages that: 1. ion with single energy can be generated and extracted; 2. the energy of the ion is adjustable; and 3. the manufacture process is simple.
Owner:XIAN TECHNOLOGICAL UNIV

Mini Receptacle

ActiveUS20100210139A1Avoid short circuit failureAvoid failureContact member assembly/disassemblyElectric discharge tubesElectrical connectorShort circuit
An electrical connector comprises: an insulating housing having an accommodating chamber at a rear portion thereof and a tongue plate protruding forwards from a front portion thereof; a plurality of conductive terminals comprising an upper row of conductive terminals and a lower row of conductive terminals which are mounted on upper and lower sides of the tongue plate respectively, each conductive terminal including a butting portion, a soldering portion, and a bending portion connected between the butting portion and the soldering portion, the butting portions of said upper row of conductive terminals and lower row of conductive terminals being mounted on the upper and lower sides of the tongue plate respectively, the soldering portions of each row of conductive terminals extending from below the rear portion of the insulating housing and being arranged in a front column and a rear column; a shielding casing covering periphery of the insulating housing; and two positioning modules being mounted into the accommodating chamber of the insulating housing and enveloping periphery of the bending portions of said plurality of conductive terminals. The electrical connector can efficiently prevent bending portions of the conductive terminals from further bending and contacting with each other when an external force is applied and thus can prevent the short circuit failure.
Owner:MOLEX INC

Semiconductor processing equipment and process control method thereof

The embodiment of the invention provides semiconductor processing equipment and a process control method thereof. The semiconductor processing equipment comprises a cavity, a lifting assembly, a baseand a temperature measuring assembly, wherein the base and the temperature measuring assembly are arranged in the cavity; the lifting assembly is used for bearing and driving wafers to be selectivelylocated at multiple stations above the base, the multiple stations correspond to the multiple target temperature values in a one-to-one mode, and the distance between each station and an upper surfaceof the base is inversely proportional to the corresponding target temperature value; and the temperature measuring assembly is arranged at positions where the lifting assembly is in contact with thewafers and is used for acquiring actual measurement temperature values of the wafers in real time. According to the embodiment of the invention, the purpose of adjusting the target temperature value according to different types of wafers and different processes is achieved, and the requirement for temperature change in the process can be met such that the yield of the wafers is effectively improved, and the process efficiency is greatly improved.
Owner:BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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