91results about "Chemical vapor deposition coating" patented technology

Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I:

wherein R¹ is independently selected from hydrogen, a linear or branched C₁ to C₆ alkyl, a linear or branched C₂ to C₆ alkenyl, a linear or branched C₂ to C₆ alkynyl, a C₁ to C₆ alkoxy, a C₁ to C₆ dialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and R² is independently selected from hydrogen, a linear or branched C₁ to C₆ alkyl, a linear or branched C₂ to C₆ alkenyl, a linear or branched C₂ to C₆ alkynyl, a C₁ to C₆ alkoxy, a C₁ to C₆ dialkylamino, a C₆ to C₁₀ aryl, a linear or branched C₁ to C₆ fluorinated alkyl, and a C₄ to C₁₀ cyclic alkyl group.

A reactor for processing a substrate includes a first housing defining a processing chamber and supporting a light source and a second housing rotatably supported in the first housing and adapted to rotatably support the substrate in the processing chamber. A heater for heating the substrate is supported by the first housing and is enclosed in the second housing. The reactor further includes at least one gas injector for injecting at least one gas into the processing chamber onto a discrete area of the substrate and a photon density sensor extending into the first housing for measuring the temperature of the substrate. The photon density sensor is adapted to move between a first position wherein the photon density sensor is directed to the light source and a second position wherein the photon density sensor is positioned for directing toward the substrate. Preferably, the communication cables comprise optical communication cables, for example sapphire or quartz communication cables. A method of processing a semiconductor substrate includes supporting the substrate in a sealed processing chamber. The substrate is rotated and heated in the processing chamber in which at least one reactant gas is injected. A photon density sensor for measuring the temperature of the substrate is positioned in the processing chamber and is first directed to a light, which is provided in the chamber for measuring the incident photon density from the light and then repositioned to direct the photon density sensor to the substrate to measure the reflection of the light off the substrate. The incident photon density is compared to the reflected light to calculate the substrate temperature.

A method for reforming an amorphous carbon film as part of a deposition process thereof, includes process of: (i) depositing an amorphous carbon film on a substrate in a reaction space until a thickness of the amorphous carbon film reaches a predetermined thickness, and then stopping the deposition process; and (ii) exposing the amorphous carbon film to an Ar and/or He plasma in an atmosphere substantially devoid of hydrogen, oxygen, and nitrogen.

Embodiments of the present invention generally relate to a clamshell and small volume chamber with a fixed substrate support. One embodiment of a processing chamber includes a fixed substrate support having a substrate receiving surface, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the fixed substrate support. The pumping ring forms at least a portion of a pumping channel and has one or more apertures formed therethrough. The chamber may further include a gas-flow diffuser disposed radially inward of the apertures of the pumping ring. Another embodiment of a processing chamber includes a first assembly comprising a fixed substrate support and a second assembly comprising a gas distribution assembly. The first assembly includes a first assembly body that is shaped and sized so that at least a portion of the first assembly body is below the substrate receiving surface of the substrate support. A hinge assembly couples the first assembly and the second assembly. The first assembly and the second assembly can be selectively positioned between an open position and a closed position.

A compact plasma generating apparatus providing high efficiency of plasma excitation is presented. A plasma generating apparatus (100) comprises a microwave generating apparatus (10) for generating microwaves, a coaxial waveguide (20) having a coaxial structure comprising an inner tube (20a) and an outer tube (20b), a monopole antenna (21) being attached to one end of said inner tube (20a), for directing the microwaves generated by said microwave generating apparatus (10) to the monopole antenna (21), a resonator (22) composed of dielectric material for holding the monopole antenna (21), and a chamber (23) in which a specific process gas is fed for plasma excitation. The chamber (23) has an open surface and the resonator (22) is placed on this open surface, and the process gas is excited by the microwaves radiated from the monopole antenna (21) through the resonator (22) into the interior of the chamber (23) to generate plasma.

RO membranes using chlorinated water as a feed stream maybe protected from damage by the chlorine with a protective layer including reactive nitrogen which forms chloromines on the surface of the membrane that reduce chlorine penetration. This protective layer also provides substantial anti-fouling capabilities, whether used with a chlorinated or unchlorinated feed stream because the chloramines are anti-bacterial. Although chlorine is lost in use, the anti-fouling layer or coating can be recharged with additional chlorine without damaging the discrimination layer. The anti-fouling layer or coating may be advantageously used with Thin film composite, TFC, membranes for use in forward and reverse osmosis may include nanoparticles, monohydrolyzed and/or di-hydrolyzed TMC, and/or alkaline earth alkaline metal complexes or other additives.

A sheet-like pane bearing a low-maintenance coating on one surface and a low-emissivity coating on the opposite surface, wherein one of the low-maintenance coating and the low-emissivity coating has a single surface reflectivity of less than 3 times, and more than one-third, that of the other coating.

An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.

The plasma processing apparatus includes main electrodes 5, 31 opposed to each other with a plasma processing space 15 interposed therebetween. The plasma processing apparatus further has a side electrode 6 opposed to side faces 5B-1, 5B-2 of the main electrode 5, as well as a side electrode 32 opposed to side faces 31B-1, 31B-2 of the main electrode 31. Therefore, in addition to the plasma processing space 15 between the main electrode 5 and the main electrode 31, an electric field can be formed in spaces between the side faces of the main electrodes 5, 31 and the side electrodes 6, 32, the spaces serving as predischarge areas 16-1, 16-2. By this electric field, processing gas present in the predischarge areas 16-1, 16-2 can be transformed into plasma. Electrons and excitation species of the plasma generated in these predischarge areas 16-1, 16-2 can be supplied directly to the plasma processing space 15.

A method for growing a crystal of an Al-containing III-V group compound semiconductor by the conventional HVPE method, characterized in that it comprises a step of reacting Al with hydrogen halide at a temperature of 700° C. or lower to form a halide of Al. The method has allowed the suppression of the formation of aluminum chloride (AlCl) or aluminum bromide (AlBr) reacting violently with quartz, which is the material of a reaction vessel for the growth, resulting in the achievement of the vapor phase growth of an Al-containing III-V group compound semiconductor at a rate of 100 microns/hr or more, which has lead to the mass-production of a substrate and a semiconductor element having satisfactory resistance to adverse environment.

Embodiments of a cover ring for use in a plasma processing chamber are provided. In one embodiment, a cover ring for use in a plasma processing chamber includes a ring-shaped body fabricated from a yttrium (Y) containing material. The body includes a bottom surface having an inner locating ring and an outer locating ring. The inner locating ring extends further from the body than the outer locating ring. The body includes an inner diameter wall having a main wall and a secondary wall separated by a substantially horizontal land. The body also includes a top surface having an outer sloped top surface meeting an inner sloped surface at an apex. The inner sloped surface defines an angle with a line perpendicular to a centerline of the body less than about 70 degrees.

Particle formation in semiconductor fabrication process chambers is reduced by preventing condensation on the door plates that seal off the process chambers. Particles can be formed in a process chamber when reactant gases condense on the relatively cool surfaces of a door plate. This particle formation is minimized by heating the door plate to a temperature high enough to prevent condensation before flowing reactant gases into the process chamber. The door plate can be heated using a heat source, e.g., a resistive heater, that is in direct contact with the door plate or the heat source can heat the door plate from a distance by radiative or inductive heating. In addition, the door plate can open to allow loading and unloading of a wafer load. As it passes flanges near the door plate, the wafer load can transfer heat to those flanges. To prevent overheating, the flange is provided with a coolant-containing channel having walls that are spaced from the flange by O-rings. The spacing of the channel walls to the flange can be varied to vary the amount of thermal contact and cooling achieved using the channels.

The invention relates to a method for coating an even and controllable deposit carbon layer on the surface of LiFePO4 particles serving as lithium ion battery cathode materials for increasing the LiFePO4 conductivity. The method adopts the concrete preparation processes that: LiFePO4 powders are placed in a constant temperature zone of a chemical vapor deposition furnace, then the air in the furnace is fully discharged for inputting inert gases, after the temperature rises to the set level, a carbon source gas is input for covering a conductivity carbon film on the surface of the LiFePO4 particles evenly, the LiFePO4 coated with the carbon film has excellent conductivity which is increased by five orders of magnitude compared with the condition before coating. The chemical vapor deposition temperature ranges from 580 to 720DEG C, the deposition time is from 1 to 10 hours, and the volume percent of the carbon source gas is between 1 and 20 percent, and a sample deposited with carbon is cooled to the room temperature with a natural furnace and is then taken out. The method can cover the conductivity carbon film on the surface of each LiFePO4 particle evenly for increasing the conductivity of LiFePO4, and the thickness of the conductivity carbon film can be accurately controlled in the range of 2 to 50 nanometers through adjusting parameters (deposition temperature, deposition time and carbon source gas volume percent) of the chemical vapor deposition process.

The invention discloses a preparation method of a porous diamond film. The preparation method of the porous diamond film comprises the following steps: putting a silicon substrate into a microwave-plasma chemical vapour deposition device, wherein a Pt metal film is plated on the surface of the silicon substrate as a catalyst; controlling the vacuum degree to be 10-30 millibars, introducing a working gas, loading a carbon source to a microwave-plasma generating region, and heating to 750-850 DEG C; depositing to obtain a blocky diamond film; calcining the film in the air atmosphere at the temperature of 500-600 DEG C, thus obtaining the porous diamond film. The preparation method of the porous diamond film has the advantages that no template is needed, no complex pre-treatment process or high temperature process is needed, metal pollution can be avoided, and a treatment process is further simplified.

A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

A solar cell and a fabricating method thereof are provided. In the method of fabricating the solar cell, a p-type semiconductor substrate on whose light-receiving surface an anti-reflection coating is formed is loaded into a processing chamber. In this case, the p-type semiconductor substrate may be loaded on a substrate support of an apparatus of processing a plurality of substrates along the circumference of the substrate support, in the state where the back surface of the p-type semiconductor substrate faces upward. Then, a back surface field (BSF) layer having the characteristic of Negative Fixed Charge (NFC) is formed with AlO, AlN or ALON on the back surface of the p-type semiconductor substrate. At this time, the BSF layer may be formed by simultaneously injecting an Al source gas, a first purge gas, an oxidizing agent gas and/or a ntiriding agent gas, and a second purge gas through injection holes of individual gas injection units while relatively rotating the substrate support with respect to the shower head. Thereafter, a back surface electrode is formed on the BSF layer such that the back surface electrode is electrically connected to the BSF layer.

The objective of the invention is to provide an adhesion-prevention plate used for a vacuum film-forming device, a manufacturing method of the plate, a vacuum film-forming device adopting the adhesion-prevention plate and a vacuum film forming method, wherein the adhesion-prevention plate has good stripping preventing effects of a film forming material in a repeated evaporation circumstances. The adhesion-prevention plate is used for preventing adhesion of the film forming material to an unneeded position in the vacuum film-forming device, is made of aluminum, and comprises a surface of a concave-convex structure having concave parts with an average opening diameter being 0.01-9 [mu]m. A plurality of convex parts having an average height of 30-1000 [mu]m are arranged on the surface. The average density of the convex parts is higher than 10/10 mm<2>. The ratio of the bottom area of the convex parts is larger than 90% in a square area having a size of 10 mm.

A fluid ejector having a first surface, a second surface, and an orifice that allows fluid in contact with the second surface to be ejected. The fluid ejector has a non-wetting layer exposed on at least a first surface of the fluid ejector, and a overcoat layer exposed on a second surface, the overcoat layer being more wetting than the non-wetting layer. Fabrication of this apparatus can include depositing a non-wetting layer on the first and second surfaces, masking the first surface, optionally removing the non-wetting layer from the second surface, and depositing an overcoat layer on the second surface.

A thin layer comprising at least a metal and a non-metallic chemical element is deposited on an oxidized layer of a substrate arranged in a reactor. The thin layer is formed by a plurality of superposed atomic layers formed by repetition of a reaction cycle comprising at least a first step of injecting a first halogenated metallic reagent into the reactor, a first reactor purging step, a second step of injecting a second reagent comprising the non-metallic chemical element into the reactor and a second reactor purging step. The process comprises, after each deposition of an atomic layer, at least one densification sequence of the atomic layer comprising a third purging step, an additional injection step of the second reagent and a fourth purging step. The time length of a densification sequence is substantially longer than the time length of a reaction cycle.

A low temperature poly-silicon thin film element, method of making poly-silicon thin film by direct deposition at low temperature, and the inductively-coupled plasma chemical vapor deposition equipment utilized, wherein the poly-silicon material is induced to crystallize into a poly-silicon thin film at low temperature by means of high density plasma and substrate bias voltage. Furthermore, the atom structure of the poly-silicon thin film is aligned in regular arrangement by making use of the induction layer having optimal orientation and lattice constant close to that of the silicon, thus raising the crystallization quality of the poly-silicon thin film and reducing the thickness of the incubation layer.

A method and system of for introducing an active material to a chemical process in which a processing element including a passive component and an active element is installed within the system and exposed to a chemical process performed within the system. As the chemical process proceeds, the passive component erodes and thereby exposes the active component embedded therein. The introduction of the active component to the chemical process alters the chemical process.

A fuel cell structure comprises a diffusion layer and/or a catalyst layer which are made of a carbonaceous porous material having a nano-size structure, such as carbon nanowall (CNW). A method of manufacturing the structure is also disclosed. The structure and method simplify the process of manufacturing a fuel cell electrode comprised of an electrode catalyst layer and a gas diffusion layer. The electrical conductivity of the catalyst layer is increased and the diffusion efficiency of the diffusion layer is improved, whereby the electricity generation efficiency of the fuel cell can be improved.

The invention discloses a method for controlling the appearance and defects of molybdenum disulfide by temperature. The method is characterized in that by using MoO3 powder added with 10% NaCl as a Mosource precursor and sulfur powder as sulfur source precursor, two-dimensional MoS2 samples grow by a chemical vapor deposition method. A grown substrate is buckled upside down directly above a quartz boat loaded with the Mo source precursor, and is heated and grows at different temperatures to obtain two-dimensional MOS2 samples with different appearances and boundary defect densities. At a lower growth temperature, because the precursor molecules of MOS2 have a short migration distance on the substrate, the grown MOS2 samples are snowflakes containing more boundary defects; and with the increase of the temperature, the appearances of the MOS2 samples are gradually transited to leaf shapes and triangle shapes, and the boundary defects also decrease rapidly. Controlling the appearances and defects of molybdenum disulfide is of great significance to promote the application of the molybdenum disulfide in the field of catalysis.

Systems and methods for synthesizing long carbon nanotubes and using the nanotube as an electrical conductor. A substrate is provided with one or more metal underlayer platforms that allow the nanotube to grow freely suspended from the substrate. A modified gas-flow injector is used to reduce the gas flow turbulence during nanotube growth. Nanotube electrodes are formed by growing arrays of aligned nanotubes between two metal underlayer platforms.