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18 results about "Nitride" patented technology

In chemistry, a nitride is a compound of nitrogen where nitrogen has a formal oxidation state of −3. Nitrides are a large class of compounds with a wide range of properties and applications. The nitride ion, N³⁻, is never encountered in protic solution because it is so basic that it would be protonated immediately. Its ionic radius is estimated to be 140 pm.

Technique for perfecting the active regions of wide bandgap semiconductor nitride devices

InactiveUS20050164475A1Lower average currentHigh densityPolycrystalline material growthFrom solid stateEngineeringNitride
This invention pertains to e lectronic / optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.
Owner:THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY

High-hardness and high-elasticity-modulus multi-component nitride coating and preparation method thereof

InactiveCN106835037AIngredient ControlHigh hardnessVacuum evaporation coatingSputtering coatingSputteringAlcohol
The present invention is a multi-component nitride coating with high hardness and high elastic modulus. Its chemical formula is AlCrTiZrNbN, and the atomic ratios of Al, Cr, Ti, Zr, Nb and N are respectively 8-12%: 8-12 %: 8~12%: 8~12%: 8~12%: 48~52%, the thickness of the coating is 2~5μm. The present invention also provides a method for preparing the above-mentioned nitride coating. Firstly, the surface of the substrate is subjected to mirror polishing, then ultrasonically cleaned with acetone and alcohol, and after vacuum ion cleaning, the AlCrTiZrNbN layer is deposited by radio frequency reactive sputtering, wherein AlCrTiZrNbN is mostly The component nitride coating is composed of AlCrTiZrNb alloy target with equiatomic molar ratio in (Ar+N 2 ) atmosphere prepared. The coating of the invention has high hardness and high modulus of elasticity, and can be used as a novel protective coating for various service occasions such as cutting tools and molds.
Owner:UNIV OF SHANGHAI FOR SCI & TECH

Aluminum alloy surface titanium dioxide conversion coating solution and using method thereof

InactiveCN103924229AUniform colorImprove corrosion resistanceMetallic material coating processesTitanium oxideConversion coating
The invention relates to an aluminum alloy surface treating technology and particularly relates to an aluminum alloy surface titanium dioxide conversion coating solution and a using method thereof. The aluminum alloy surface titanium dioxide conversion coating solution is an aqueous solution which contains titanium salt and fluoride, and the pH value of the aqueous solution is regulated to 3.5-4.5 by using non-reducing acid. After being pretreated, the surface of aluminum alloy is soaked into the aluminum alloy surface titanium dioxide conversion coating solution for 1-15min, thus a conversion coating is formed on the surface of the aluminum alloy. According to the invention, the chemical conversion treatment is carried out by using titanium salt instead of chromic acid, the surface of the aluminum alloy is etched by using low-concentration fluorine ions, and titanyl sulfate or titanyl nitride is induced to hydrolyze to generate a titanium dioxide conversion coating on the surface of the aluminum alloy, wherein the titanium dioxide conversion coating is uniform in color and luster and excellent in corrosion resistance. The titanium salt is nonpoisonous, the conversion solution is simple in component, no great number of energy is consumed, and no environment hazards are caused, therefore, a clean production process is achieved.
Owner:无锡铱美特科技有限公司 +1

Abrasive-containing emulsifying compound metal cutting solution and preparation method thereof

ActiveCN104120020AExcellent lubricating and anti-wear propertiesImprove the lubrication effectLubricant compositionWater basedSodium metasilicate
The invention discloses an abrasive-containing emulsifying compound metal cutting solution. The cutting solution is characterized by being prepared from the following raw materials in parts by weight: 3-5 parts of aluminum hydroxide powder, 1-2 parts of hydroquinone, 2-4 parts of aluminum nitride, 4-6 parts of nano medical stone powder, 1-2 parts of stannous chloride, 2-3 parts of sodium metasilicate pentahydrate, 5-6 parts of sodium dibutyl naphthalene sulfonate, 1.5-2.5 parts of propylene glycol alginate, 2-4 parts of alpha-sulfomonocarboxylate, 5-7 parts of aid and 200 parts of deionized water. The added abrasive such as the nano medical stone is matched with a surfactant, so that the cutting solution disclosed by the invention has good dispersibility and abrasion resistance and has the effects of sterilization and deodorization; the abrasion resistance, dispersibility, lubricity and film-forming property are strengthened by adding the aid; the aid is matched with the surfactant, so that the cutting solution has excellent lubricity, abrasion resistance and cleaning and cooling property; the cutting solution disclosed by the invention, which is in the shape of water-based emulsion, is excellent in performance, simple and feasible in processing technology and low in cost.
Owner:山东斯瑞药业有限公司

Oxide layer and method for manufacturing grid electrode of flash memory containing same

InactiveCN101996873AImprove flatnessUniform thicknessSemiconductor/solid-state device manufacturingSemiconductor devicesManufacturing gridNitride
The invention provides a method for manufacturing an oxide layer, which comprises the following steps of: providing a nitride layer; performing plasma surface treatment on the nitride layer; and forming the oxide layer by utilizing a process of high aspect ratio. The invention also provides a method for manufacturing a grid electrode of a flash memory. A manufacturing method of a second oxide layer in the flash memory is the same as that of the oxide layer. Oxides manufactured by the method have high flatness and uniform thickness.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Microwave reactor vessel

ActiveUS10245574B1Chemical/physical/physico-chemical stationary reactorsCarbideNitride
A microwave reactor constructed to produce a homogeneous heat distribution across the body of the microwave reactor subsequent exposure to microwave irradiation. The microwave reactor includes a body having an exterior wall transparent to microwave irradiation. A microwave sensitized element layer is adjacent the exterior wall and is comprised of a carbide mixture wherein the carbide mixture includes a carbide mixed with either a metal oxide, a ferrite or a nitride. The carbide mixture is in granular form wherein the carbide has a larger particle size than the other component. The microwave sensitized element layer further includes a metal layer that extends the length thereof. The metal layer is positioned in various arrangements within or adjacent to the carbide mixture. The body further includes an inner layer adjacent to the microwave sensitized layer opposite the exterior wall. The inner layer is transparent to microwave irradiation.
Owner:SHORE GJERGJI JOSIF

Semiconductor device and method of manufacturing the same

ActiveUS20060214245A1Maintain relatively stableInhibited DiffusionSemiconductor/solid-state device manufacturingSemiconductor devicesDevice materialNitrogen
The semiconductor device includes a semiconductor substrate, a gate insulating film formed in contact with an upper side of the semiconductor substrate, and a gate electrode formed on the upper side of the gate insulating film and made of metal nitride or metal nitride silicide. A buffer layer for preventing diffusion of nitrogen and silicon is interposed between the gate insulating film and the gate electrode. Preferably, the buffer layer has a thickness of 5 nm or less. In the case where gate electrode contains Ti elements, and the gate insulating film contains Hf elements, the buffer layer preferably contains a titanium film.
Owner:RENESAS ELECTRONICS CORP

Method for preparing carbonitride-silicide solid solution composite ceramic at low temperature by reaction hot pressing sintering technology

PendingCN113999013AFacilitated DiffusionPromote interactionComposite ceramicCarbide
The invention relates to a method for preparing carbonitride-silicide solid solution composite ceramic at a low temperature by a reaction hot pressing sintering technology, and belongs to the field of multiphase ceramic materials. The invention aims to solve the technical problems of poor sinterability and high-temperature performance of the existing multiphase ceramic. The method comprises the following steps: 1, mixing carbide powder, carbonitride powder and silicon powder, and carrying out ball milling to obtain composite powder; and 2, sintering the composite powder obtained in the step 1 to obtain the carbonitride-silicide solid solution composite ceramic. Fourth subgroup carbides and carbonitride capable of generating solid-phase exchange are selected, the solid-phase reaction and the solid-solution coupling synergistic process of original powder in the sintering process are fully utilized, an anion-cation dual solid solution or split-phase solid solution can be formed, and compared with a traditional means, the sintering temperature can be reduced by 300-500 DEG C. And the relatively low sintering temperature ensures that the material prepared by the method has a fine average grain size, and the strength and the hardness of the material are remarkably improved.
Owner:HARBIN UNIV OF SCI & TECH
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