22 results about "Sputtering" patented technology

Provided is a copper or copper alloy target/copper alloy backing plate assembly in which the anti-eddy current characteristics and other characteristics required in a magnetron sputtering target are simultaneously pursued in a well balanced manner. This copper or copper alloy target/copper alloy backing plate assembly is used for magnetron sputtering, and the copper alloy backing plate is formed from low beryllium copper alloy or Cu—Ni—Si-based alloy. Further, with this copper or copper alloy target/copper alloy backing plate assembly, the copper alloy backing plate has electrical conductivity of 35 to 60% (IACS), and 0.2% proof stress of 400 to 850 MPa.

The invention discloses a road guardrail automatic cleaning car, which comprises a car body and wheels. The road guardrail automatic cleaning car is characterized in that an ascending and descending platform is connected onto the car body through an ascending and descending machine and a guide post; the lower end of the outer side of the ascending and descending platform is provided with a platform side plate; in addition, the inner side surface of the platform side plate is provided with a water spraying head which communicates with a water tank arranged on the car body; a movable brush head movably sleeves the ascending and descending platform; a plurality of rotating hair brushes are arranged under the movable brush head; a rotating hair brush is arranged under the ascending and descending platform arranged at the opposite inner side of the platform side plate; a hydraulic cylinder is arranged on the ascending and descending platform; the upper side of the hydraulic cylinder is connected with a push plate arranged on the moving brush head through a push rod. The road guardrail automatic cleaning car has the advantages that road guard bars can be conveniently cleaned by sanitation men; water resources are saved; water beam sputtering is avoided; the automatic cleaning is realized; convenience, high efficiency and high practicability are realized.

The electrode for high-voltage in-situ impedance spectroscopy measurement of the present invention and its preparation method and application belong to the technical field of in-situ measurement of electrical quantities under high-voltage conditions. The electrode consists of an aluminum oxide protective layer (3) deposited on the surface of the diamond anvil (2) and a metal film electrode (1); the metal film electrode (1) is circular in the center of the anvil surface of the diamond anvil (2), Copper wire (5) is bonded to the metal film electrode (1) on the side of the diamond anvil (2); the metal spacer (4) is used as another electrode, forming an axisymmetric electrode together with the metal film electrode (1) system. Electrodes are prepared by magnetron sputtering, molybdenum coating, aluminum oxide deposition, photolithography and chemical corrosion. The invention solves the problems of electrode fixing and sample cavity insulation, and can ignore the influence of the parasitic capacitance and inductance of the system on the measurement results, making it possible to measure the material impedance spectrum in situ with the diamond anvil under high pressure.

To provide a magnetron sputtering cathode, a magnetron sputtering apparatus, and a method of manufacturing a magnetic device, capable of generating a leakage magnetic field sufficiently large to form a magnetic tunnel necessary for discharge on the surface of a target even when the target is a magnetic body and thick and a ferromagnetic body is used as the target. The magnetron sputtering cathode of the present invention includes a target having a second annular groove provided on the sputtering surface of the target, a third annular projection provided on the non-sputtering surface of the target, a fourth annular groove provided outside the third annular projection on the non-sputtering surface, and a fourth annular projection provided outside the fourth annular groove on the non-sputtering surface. Further, the magnetron sputtering cathode includes a first magnet and a second magnet 6 having a polarity different from that of the first magnet on the non-sputtering surface side.

The invention discloses a manufacturing method of a surface mounted device (SMD) resistor. The method for manufacturing a positive electrode of the SMD resistor comprises the following steps: firstly, printing a resistive layer; secondly, printing and covering a positive auxiliary electrode at both sides of a position in which the resistive layer is close to the positive electrode; and thirdly, sputtering to form the positive electrode, thus ensuring the connectivity between the positive electrode and the resistive layer and strengthening the stability of a product. The positive electrode is used for sputtering a conductive material which takes silver as a main composition in a vacuum sputtering mode. The sputtered conductive material can be sputtered uniformly to a substrate surface. A sputtered electrode layer has the advantages of thin film and excellent uniformity, thus ensuring the uniformity of the film thickness of the positive electrode and overcoming the shortcoming that the initial value of the resistor is easy-dispersed. Besides, the cost of the conductive material taking the silver as the main component is lower than that of silver paste, and the amount of the conductive materials is less, thus effectively reducing the production cost of products, improving the market competitiveness of the products and being suitable for batch production.

The invention discloses a complementary type resistive random access memory and preparation method thereof. The complementary type resistive random access memory includes a bottom layer conductive oxide electrode, a CuO storage medium layer arranged on the upper surface of the bottom layer conductive oxide electrode and a ZrO storage medium layer arranged on the upper surface of the CuO storage medium layer. The method is as follows: direct current magnetron sputtering is adopted to prepare a conductive oxide thin film on a Si substrate, magnetron sputtering is adopted to prepare a CuO storage medium layer on the upper surface of the conductive oxide thin film, magnetron sputtering is adopted to prepare a ZrO storage medium layer on the upper surface of the CuO storage medium layer, and magnetron sputtering is adopted to prepare a W electrode on the upper surface of the ZrO storage medium layer. The complementary type resistive random access memory structure solves the problem of crosstalk of a cross array resistive random access memory without additionally using a diode or triode, and has the characteristic that a circuit is simple.

The invention belongs to the field of production and processing of an attenuation sheet, and specifically relates to a manufacturing method for a 1dB attenuation sheet with power of 2W; the manufacturing method comprises the following steps of designing an attenuation sheet pattern through HFSS software in a simulation manner; sputtering a resistor and an electrode layer on an aluminum oxide ceramic substrate; electroplating a thickened gold electrode; obtaining electrode and resistor patterns through photoetching; dividing the attenuation sheet by a grinding wheel into independent attenuation sheet units; adjusting input and output impedances by a thermal oxidation impedance adjusting method; and coating the input end and the output end of the attenuation sheet with conductive silver paste. By adoption of the attenuation sheet manufactured by the invention, the operating frequency can achieve 18GHz; the attenuation precision within the operating efficiency is 1dB plus or minus 0.4dB; the standing-wave ratio is less than or equal to 1.3; and the input and output impedances are 50 plus or minus 1 omega.

The present invention provides a sputtering apparatus and a film forming method that can form a high quality film in a groove having a sloping wall such as a V-groove. The sputtering apparatus of the present invention includes a rotatable cathode (102), a rotatable stage (101), and a rotatable shield plate (105). The sputtering apparatus controls rotation of at least one of the cathode (102), the stage (101), and the shield plate (105) so that sputtering particles are incident on the V-groove formed in a substrate (104) at an angle of 50° or less with respect to a normal to a sloping wall of the V-groove.

The invention discloses a large-plate-blank carbon-free and silicon-free baking-free long water gap, which consists of a long water gap substrate and an inner liner, wherein the long water gap substrate consists of a zirconium carbon outer layer and an aluminum carbon inner layer, the zirconium carbon outer layer consists of following substances in parts by weight: 70 to 80 parts of zirconium, 12 to 14 parts of C (carbon) and 2 to 4 parts of CaO (calcium oxide), the aluminum carbon inner layer consists of the following substances in parts by weight: 60 to 80 parts of Al2O3 (aluminum oxide) and 10 to 30 parts of C, and the inner liner consists of the following ingredients in parts by weight: 74 to 76 parts of aluminum magnesium spinel, 14 to 16 parts of anti-explosion fiber and 8 to 10 parts of phenolic resin. Through the use of the baking-free long water gap for large-plate-blank continuous casing low-carbon and low-silicon steel, impurity pollution and steel blank carbon increase and silicon increase phenomena caused by secondary oxidization of large-ladle molten steel and molten steel sputtering can be prevented, the continuous casting efficiency can be continuously improved, the continuous casting blank quality is ensured, and more economic benefits are created for enterprises.

It is a magnesium alloy surface treatment methods, including the following steps. Step one : treating the surface of magnesium alloy material using dry sandblasting machine with natural sand; Step two: cleaning the surface of magnesium alloys with water; Step three: drying magnesium alloy materials; Steps four : Sputtering a stainless steel vacuum layer on the surface of magnesium alloy materials; Step five: Sputtering a copper layer on the stainless steel vacuum layer; Step six : immersing the magnesium alloy into the plating solution, flash plating with a certain voltage for a period; Step seven: Magnesium Alloys will be immersed in electroless nickel solution by chemicals plating. This invention combined the vacuum sputtering and chemical plating,with electroless nickel plating after sputtered stainless steel and copper layers. This technics, with simple operation but excellent performance, greatly improves the corrosion resistance and wear resistance of magnesium alloy and is relative environment friendly.

The invention relates to a high-resistivity high-entropy alloy film and a preparation method thereof, and belongs to the field of multi-principal-element alloy film materials. The novel high-entropy alloy film component contains six elements of Fe, Co, Ni, Al, Mn and W elements with different proportions, and the atomic percentages are 25%-35%, 25%-35%, 10%-25%, 5%-15%, 5%-15% and 5%-10% respectively. The preparation method comprises the following steps of ultrasonically cleaning a substrate, preparing a composite target, carrying out vacuumizing on a vacuum chamber, filling the vacuum chamberwith argon, carrying out pre-sputtering, heating the substrate and carrying out sputtering. A prepared film sample is smooth in surface, uniform in thickness and fine in structure, and the structureis a single-phase BCC solid solution, and is free of phase separation or intermetallic compound generation. According to the preparation method, the novel magnetic high-entropy alloy film with high hardness and high resistivity can be prepared, the thickness of the novel magnetic high-entropy alloy film is 500-2000 nm, and the highest resistivity is about 1800 microhm . m.

The invention provides a cleaning method for improving uniformity of a Schottky barrier layer. The method comprises the following steps: selecting processed silicon as substrate silicon, and preparing liquid 1 to clean the substrate silicon so as to remove metal ions and organic contaminations on the surface of the substrate silicon; preparing liquid 2 to clean the substrate silicon so as to remove a natural oxide layer and an oxide layer generated in the previous process; and preparing liquid 3 to carry out hydrophilic treatment on the surface of the substrate silicon, carrying out spinning drying processing on the processed substrate silicon, and then, combining the metal and the substrate silicon through an evaporation or sputtering mode to obtain the Schottky barrier layer. According to the cleaning method for improving the uniformity of the Schottky barrier layer, the surface of the substrate silicon is hydrophilic after being cleaned, so that impurities on the surface of the substrate silicon can be removed effectively, a cleaning effect is ensured, uniformity of the barrier is improved, tunneling current is reduced, leak current is reduced and quality of a Schottky barrier device is improved.

The invention belongs to the technical field of silicon tube sputtering target materials, and particularly relates to a preparation method of a silicon tube sputtering target material. The silicon tube sputtering target material comprises metallic silicon and a metal element additive, wherein the mass parts of the components are as follows: 96-98 parts of metallic silicon, and 2-4 parts of metal element additive. The preparation method further comprises the following steps of: S1, cleaning the metallic silicon by using ultrasonic equipment, and ball-milling the metallic silicon twice to obtainsilicon powder; S2, uniformly mixing the metallic silicon and the metal element additive by using a mixing device to obtain mixed powder; and S3, filling the mixed powder into a tubular cavity of a cold isostatic pressing mold, pressing the silicon powder into a tubular shape through a three-time static pressure process, then removing the cold isostatic pressing mold to obtain a silicon tube blank, and trimming the end head and the outer surface of the silicon tube blank. The silicon tube sputtering target material is scientific and reasonable in structural design, has more excellent specificresistance, stress and corrosion resistance to a base material, and is more reliable in use.

The invention discloses a method for inhibiting generation of an ordered intermetallic compound in the phase change process of an Al-Ni nano multilayer film by adding a transition layer. According to the requirement of a use environment, materials such as Cu and Ti which can generate self-propagating reaction with Al or Ni are introduced to serve as the transition layer, so that the thickness of the transition layer is matched with the thickness of an initial film without the transition layer, and a final stable phase product of the film is not changed; a composite film with the period of Al/X/Ni/X and the adjustable total thickness is prepared by adopting coating processes such as magnetron sputtering; on the basis of inhibiting mutual diffusion of Al and Ni elements at room temperature and ensuring storage stability, formation of initial Al3Ni or Al3Ni2 and other ordered intermetallic compound phases in the phase change process is further inhibited; the inhibition effect of the initially precipitated ordered intermetallic compound relative to atomic diffusion is weakened; preferential or direct formation of a stable phase corresponding to a specific modulation period is promoted; and the method has important significance in improving energy output, even realizing controllable energy release and further promoting military and industrial application.

The invention provides a thin-film sputtering force transducer adapting to a lunar environment. The transducer comprises a connecting end, a wiring terminal seat (12), a lead pin (14), and an elastomer (16). The elastomer (16) being a Chiness-character-tu-shaped stepped cylindrical bench includes a thick cylindrical bench and a thin cylindrical bench. A terminal seat through hole is formed in the wiring terminal seat (12) along the middle axis; the thin cylindrical bench passes through the terminal seat through hole and is connected with one end of the connecting end for exerting an axial tensile force on the elastomer (16); and the thick cylindrical bench is fixedly connected with one end of the wiring terminal seat (12). A resistor strain gate graph film is sputtered on the end surface of the thick cylindrical bench of the elastomer (16); the resistor strain gate graph film includes four resistor bridge arms; and when the axial tensile force is exerted on the elastomer (16), the resistance values of the four resistor bridge arms are changed. The two ends of the four resistor bridge arms are connected with the external world by the lead pin (14), so that the differential voltage change is measured to obtain the axial force. The provided transducer is not easy to affect by the interference on the non-axial force and is suitable for large working temperature zone.