29 results about "Dielectric" patented technology

Transistor bodies of semiconductor material located at a main surface of a semiconductor substrate between shallow trench isolations are provided with a rounded or curved upper surface. A floating gate electrode is arranged above said upper surface and electrically insulated from the semiconductor material by a tunnel dielectric having essentially the same tiny thickness throughout a primary tunnel area encompassing the area of curvature. The floating gate electrode may bridge the transistor body and is covered with a coupling dielectric provided for a control gate electrode, which forms part of a wordline.

An RF-excited waveguide laser module comprises a first electrode having a first elongate surface defining in part a waveguide laser channel extending along an optical axis, the first elongate surface having a substantially linear cross-section normal to the optical axis. A second electrode has a second elongate surface defining in part the waveguide laser channel extending along the optical axis. The second elongate surface has a non-linear cross-section normal to the optical axis. A dielectric insert may be provided between the electrodes defining in part the waveguide laser channel. A lengthwise gap may extend essentially an entire length of the waveguide laser channel between one of the first and second electrodes and the dielectric insert. The gap provides fluid communication between the waveguide laser channel and a volume outside the waveguide laser channel.

A semiconductor device includes an active layer, a source electrode, a drain electrode, a gate electrode, an interlayer dielectric, an inter-source layer, an inter-source plug, an inter-drain layer, an inter-drain plug, an inter-gate layer, and an inter-gate plug. The active layer is made of III-V group semiconductors. The source electrode, the drain electrode, and the gate electrode are disposed on the active layer. The gate electrode is disposed between the source electrode and the drain electrode. The interlayer dielectric covers the source electrode, the drain electrode, and the gate electrode. The inter-source layer, the inter-drain layer, and the inter-gate layer are disposed on the interlayer dielectric. The inter-source plug is electrically connected to the source electrode and the inter-source layer. The inter-drain plug is electrically connected to the drain electrode and the inter-drain layer. The inter-gate plug is electrically connected to the gate electrode and the inter-gate layer.

In a touch-mode capacitance type pressure sensor, a quartz pressure sensor that can solve difficulty in thickness control on a diaphragm due to a low etching precision which is a drawback in a pressure sensor using a detecting piece made from silicon, and deterioration in a detecting accuracy and poor repetitive reproducibility in elastic deformation due to the difficulty, respectively, is provided by utilizing quartz as a detecting piece for the pressure sensor. The quartz pressure sensor includes a bottom plate made from an insulating material, a lower electrode film and a dielectric film sequentially laminated on a face of the bottom plate, a detecting piece provided at a position thereof opposed to said dielectric film with a thin portion and fixed on the face of the bottom plate, and an upper electrode film formed in at least one portion of the thin portion having a positional relationship thereof opposed to the lower electrode film, in which a fine gap airtight space is provided between a lower face of the detecting piece and the dielectric film is characterized in that the detecting piece is made from a quartz material.

The invention discloses a multilayer film reflective high-precision metal round raster with metal base plate and at least four film layers of dielectric film, bright line, dielectric film and dark line, which comprises the following steps: (1) transmitting the raster metal material basic material into the metal mirror face through abating, kibbling and optical buffing; (2) depositing vacuum multilayer metal film on the metal mirror face; (3) coating the photoresist on the deposited metal film layer; (4) making the high-precision round raster through duplicating and corroding.

The invention provides a 1.2 micron wavelength all-solid-state Raman laser, and belongs to the technical field of solid-state laser. The 1.2 micron wavelength all-solid-state Raman laser comprises a pumping source, a coupling lens group and a resonant cavity. A laser crystal, a Q-switched device and a Raman crystal are arranged in the resonant cavity. Constant temperature of the crystals and the device is maintained by a temperature control system. 1.1 micron fundamental frequency light is generated by Nd:YAG ceramic, and 1252nm Raman light is outputted by the Raman crystal SrWO4. Raman shift is performed on 1.1 microns fundamental frequency wave of neodymium-doped crystals for the first time as we know. When the pumping power is 21.3W and the pulse repetition frequency is 5KHz, the maximum output power of the obtained 1252nm Raman light is 1.02W and an optical conversion efficiency is 4.79%. Dielectric films capable of outputting the required wavelength are coated on an input lens M1, an output lens M2 and the end surface of the laser crystal and the Raman crystal. The laser can be used as a pumping source of a Raman amplifier of 1.26-1.36 micron communication window band and is an important application in laser display. Besides, the laser can also be applied to the biological, medical and astronomical fields.

A microwave device for the ablation of biological tissues including a coaxial antenna, including an internal conductor, surrounded by a layer of dielectric material, an external conductor coaxial to the dielectric metal tip electrically connected to the internal conductor, and a quarter wave impedance transformer including a sleeve made of dielectric material having a proximal end covered with a layer of metal, the metal extending over nearly a quarter wavelength of electromagnetic field in the dielectric at the operating frequency of the device or of odd multiples of the quarter wavelength, the layer of metal material being connected electrically to the external conductor.

In an electric discharge machining apparatus that machines a workpiece (1) by using a water-based dielectric fluid as a dielectric fluid while a voltage is being applied to a machining gap between an electrode (2) and the workpiece (1), the electric discharge machine includes:

an anticorrosive power source section (26) that applies a predetermined voltage by taking the workpiece (1) as a cathode and taking as an anode an anticorrosive electrode (25) opposing the workpiece (1) with an insulator (24) therebetween;

a dielectric fluid quality measuring instrument (22) that measures a quality of the dielectric fluid; and

a dielectric fluid quality control section (16, 17, 18, 19, 20, 21, 23) that controls a pH level of the dielectric fluid to be within a range from 8.5 to 10.5 on the basis of the measured result of the dielectric fluid quality measuring instrument (22).

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a logic region and high-voltage (HV) region; forming a first gate structure on the logic region and a second gate structure on the HV region; forming an interlayer dielectric (ILD) layer around the first gate structure and the second gate structure; forming a patterned hard mask on the HV region; and transforming the first gate structure into a metal gate.

The invention discloses a dielectric constant measuring jig and method based on a parallel plate capacitance method, and belongs to the technical field of material measurement application. The measuring jig comprises an electrode system, a sliding frame system, a thickness measuring system and a base plate. The electrode system comprises an upper pole plate, a lower pole plate, a supporting columnand a triangular bracket. The sliding frame system comprises a rotating hand wheel, a ball screw, a sliding rail and a sliding block, the rotating hand wheel is connected with the ball screw, the sliding block moves on the sliding rail, the upper pole plate of the electrode system is fixed on the sliding block, and the rotating hand wheel controls the sliding block to move and drives the upper pole plate to move. The thickness measuring system is used for measuring the relative displacement of the upper pole plate along with the movement of the sliding block. A measured sample is placed between the upper pole plate and the lower pole plate, and the dielectric constant of the sample is calculated by utilizing the read capacitance value of a parallel plate capacitor, so that the fringe effect is reduced, the precision of a measurement result is improved, and the requirements of test samples with different sizes are met.

The invention discloses an interlayer hole modeling method and an anti-single event effect analysis method and device, and a three-dimensional monolithic integrated circuit comprises a three-dimensional monolithic integrated circuit upper layer, a three-dimensional monolithic integrated circuit lower layer, and an interlayer dielectric medium located between the three-dimensional monolithic integrated circuit upper layer and the three-dimensional monolithic integrated circuit lower layer. An interlayer hole is formed in an interlayer dielectric medium, and the method comprises the steps that the size of the interlayer hole, the resistivity of an interlayer hole material and the attribute of the interlayer dielectric medium are determined; constructing a parasitic resistance model of the interlayer hole based on the size of the interlayer hole and the resistivity of the interlayer hole material; and constructing a stray capacitance model corresponding to the interlayer hole based on the size of the interlayer hole and the attribute of the interlayer dielectric.

The invention discloses a method of manufacturing a semiconductor device. The method comprises the following steps: a semiconductor substrate is provided; a virtual gate electrode is formed on the semiconductor substrate; a sacrificial material layer is formed on the semiconductor substrate and the virtual gate electrode; planarization technology is executed to enable the top part of the virtual gate electrode to be exposed; the virtual gate electrode is etched and removed to form a groove, and a metal gate electrode is formed in the groove; and the sacrificial material layer is removed. According to the manufacturing technology of the invention, the problems that etching of a contact hole stops and connection of the contact hole is short-circuited when the contact hole in the semiconductor device with the high K dielectric/metal gate electrode is manufactured can be effectively avoided.

The invention relates to a rock crushing technology, and belongs to the technical field of rock auxiliary crushing by focusing high-power industrial microwaves through a rectangular waveguide with a compression section of a filling medium. The device mainly comprises a standard waveguide flange, a standard waveguide section, a variable cross-section waveguide section, a wedge-shaped dielectric medium, a compressed cross-section waveguide and a protective cap. The standard waveguide flange is connected with a flange of the microwave generation and regulation device; the standard waveguide section is connected with the variable cross-section waveguide section and the compressed cross-section waveguide section in sequence; the wedge-shaped dielectric medium is arranged in the variable cross-section waveguide section and the compressed cross-section waveguide section; the protective cap is installed at the tail end of the compressed cross-section waveguide section. According to the invention, the waveguide size is compressed by filling the dielectric medium, the microwave power density at the waveguide outlet is improved, and the device is used for fracturing hard rock, assists a machine in efficient crushing and has great application prospects and value.

Methods of forming planar carbon nanotube (''CNT'') resistivity-switching materials for use in memory cells are provided, that include depositing first dielectric material (58b), patterning the first dielectric material, etching the first dielectric material to form a feature within the first dielectric material, depositing CNT resistivity-switching material over the first dielectric material to fill the feature at least partially with the CNT resistivity-switching material, depositing second dielectric material (112) over the CNT resistivity-switching material, and planarizing the second dielectric material and the CNT resistivity-switching material so as to expose at least a portion of the CNT resistivity-switching material within the feature. Other aspects are also provided.

The invention provides a combinable circuit structure, aiming at the shortcomings of flexibility and the stretchability deficiency of the existing electronic technology. The combinable circuit structure comprises a basic unit, a power supply system, and a load, wherein the basic unit comprises a control electrode, an effect electrode, a liquid container, liquid metal, and dielectric. Through the micro-machining and microfluidic methods, the flexible stretchable electronic logic element structure is realized by using the electronically controlled deformation characteristics of the liquid metal;by combining a plurality of basic combinable circuit structures, an arbitrary logic control structure can be realized; and the circuit structure can be used for rapid manufacturing of flexible digital circuits and logic control circuits, and has high application value and development prospect.

The invention relates to a three-channel broadband coaxial rotary hinge and an implementation method thereof, and mainly solves the problems of transmission and coupling conversion of signals of a rotary end and a fixed end of a first channel and three-channel integration. According to the three-channel broadband coaxial rotary hinge, a first channel rotation transition radio frequency socket anda rotation end coaxial line are electrically connected through a first transition reed, a fixed end radio frequency socket and a fixed end coaxial line are electrically connected through a second transition reed, a second channel dielectric sleeve is clamped on a first channel fixed end coaxial line outer conductor, and a transmission ring is embedded in a dielectric sleeve, so that a first channel cavity and a second channel cavity are small in space size, high in rotary hinge working frequency and wide in bandwidth; and two radio-frequency cables penetrating through a third channel bush anda rotary transition step shaft are connected with the first channel rotary transition radio-frequency socket and the second channel rotary transition radio-frequency socket respectively, the bush is embedded with the rotary transition step shaft, the first channel and the second channel are integrated in a radial overlapping mode, the third channel, the first channel and the second channel are integrated in an axial stacking mode, and the three channels are independent of one another in structure and are integrated in a modular mode.