2 results about "Metallic electrode" patented technology

According to the asymmetric induced room-temperature high-sensitivity photoelectric detector and the preparation method thereof provided by the invention, the tungsten sulfide material is transferred on the silicon substrate covered with the silicon oxide, the graphene material is transferred on one end of the tungsten sulfide material to realize covering contact, and the contact electrode is prepared on one end of the tungsten sulfide material covered with the graphene material to realize the asymmetric induction room-temperature high-sensitivity photoelectric detector. The contact electrode and the lead electrode serve as one end of the device; a metal electrode or a metal grating is directly prepared on the other end of the tungsten sulfide material to serve as a contact electrode and a lead electrode of the other end of the device. The invention provides an asymmetric induced room-temperature high-sensitivity photoelectric detection device, which solves the problem that a conventional metal WS2 metal device has no net light response under uniform all-light irradiation, retains the original photoelectric characteristics of a WS2 material, and enables high-sensitivity and multifunctional photoelectric detection at room temperature to have popularization and use values.