43 results about "Single crystal" patented technology

Provided are a method of fabricating a light-emitting apparatus with improved light extraction efficiency and a light-emitting apparatus fabricated using the method. The method includes: preparing a monocrystalline substrate; forming an intermediate structure on the substrate, the intermediate structure comprising a light-emitting structure which comprises a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type stacked sequentially, a first electrode which is electrically connected to the first conductive pattern, and a second electrode which is electrically connected to the second conductive pattern; forming a polycrystalline region, which extends in a horizontal direction, by irradiating a laser beam to the substrate in the horizontal direction such that the laser beam is focused on a beam-focusing point within the substrate; and cutting the substrate in the horizontal direction along the polycrystalline region.

The present invention relates to an apparatus and method for growing a high melting point single crystal having a predetermined orientation, which is grown from a culture rod (3) by a floating zone method or a suspension zone method. The device comprises: culture rods (3) and crystal nuclei (4), a strip-shaped resistance heating type heating strip (6) provided with at least one opening is installed between its ends and next to it, and it is heated To the crystal melting temperature, so as to form the melting zone (5), drive mechanism (8, 11), so that relative movement occurs between the heating belt (6) and the crystal nucleus (4) and the culture rod (3) that are installed next to the heating belt , the molten liquid material of the culture rod (3) is obtained through each opening of the heating belt, and causes single crystal growth on the crystal nucleus (4) by cooling, and another heating device (15, 16), which is arranged at the melting The vicinity of the zone (5) in order to set the temperature gradient within the range of the melting zone (5). In order to reduce the temperature gradient in the melting zone, said further heating device (15, 16) comprises at least one heating coil (17, 19), which is driven with radio frequency, wherein the heating strip (6) and the respective heating coil are thus mounted opposite each other (17, 19) so that radio frequency radiation is coupled on the heating strip in order to generate an additional inductive heat input in the heating strip and to set a temperature gradient across the melting zone (5). This enables an inductive heat input into the heating strip, which can be varied or varied in a targeted manner.

To provide a method for manufacturing a large semiconductor device which easily operates normally and has excellent current characteristics. A first single-crystal semiconductor layer is provided over an insulating substrate. Then, the first single-crystal semiconductor layer is processed into an island shape. After that, a second single-crystal semiconductor layer is provided over the insulating substrate so as to overlap with part of a region where the first single-crystal semiconductor layer is provided. After that, the second single-crystal semiconductor layer is processed into an island shape. Thus, defects at joint portions in the case of providing the single-crystal semiconductor layers can be reduced.

The invention discloses a method for preparing a self-supporting mono-crystal gallium nitride substrate, comprising the following steps: a layer of masking film is grown on a GaN heteroepitaxal substrate, and a series of growth windows are opened on the masking film, and then a GaN nucleating layer, a GaN template layer and a GaN thick film are sequentially grown, and then the heteroepitaxal substrate is peeled by laser light. The method is a two-step stress relief method: the first step adopts side extension technology, one part of area of a sample is connected with the heteroepitaxal substrate, so as to release partial stress naturally; the second step adopts laser peeling technology to peel the sample from the heteroepitaxal substrate, and then partial stress is released again. The self-supporting mono-crystal gallium nitride substrate prepared by the invention has uniform stress relief and high finished product ratio and is suitable for large-scale industrial production.

The invention discloses an oxygen atmospheric control making method of a-axle oriental YBCO hyperconductive thick film, which is characterized by the following: utilizing liquid-phase epitaxial device to make high-crystal product; allocating Ba-Cu-O powder according to the rate of Ba and Cu at 3: 5; grinding; sintering; placing in the Y2O3 copple to fuse; obtaining Y-Ba-Cu-O flux; changing 100% pure-oxygen atmosphere in the sealed furnace; adjusting flux temperature in the copple lower than YBCO peritectic fusing temperature by 5-20K; obtaining high-quality a-axle YBCO film on the liquid-phase of (110) single-crystal neodymium gallium acid base.

A silicon single crystal is produced by the CZ process by setting a hydrogen partial pressure in an inert atmosphere within a growing apparatus to 40 Pa or more but 400 Pa or less, and by growing a trunk part of the single crystal as a defect-free area free from the Grown-in defects. Therefore, a wafer the whole surface of which is composed of the defect-free area free from the Grown-in defects and which can sufficiently and uniformly form BMD can be easily produced. Such a wafer can be extensively used, since it can significantly reduce generation of characteristic defectives of integrated circuits to be formed thereon and contribute for improving the production yield as a substrate responding to the demand for further miniaturization and higher density of the circuits.

The invention relates to the technical field of recovering silicon materials and removing impurities, in particular to a method for removing impurities of graphitic polysilicon materials growing in a reducing furnace. The invention aims to provide a method for cleaning graphitic silicon materials and has goals of conveniently removing graphitic impurities in the silicon materials and having less silicon wastage. The method for cleaning graphitic silicon materials has simple operation, can effectively remove graphite in the silicon materials, reduce the loss of the silicon materials and greatly increase the success ratio for growing single crystals by using a czochralski method.

The invention provides a single-crystal lithium nickel cobalt manganese oxide composite material and a preparation method thereof. The preparation method comprises the following steps: uniformly mixing a ternary precursor, a lithium salt and a cosolvent in a mixer according to a preset ratio; calcining the mixed material in an oxygen-enriched atmosphere, cooling, crushing the cooled material, sieving, and removing iron to obtain a single crystal lithium nickel cobalt manganese oxide material; uniformly mixing the prepared material with a carbon source and a metal oxide in a ball mill accordingto a preset proportion; and calcining the mixed material in an inert atmosphere, cooling, crushing the cooled material, sieving the cooled material, and removing iron to obtain the carbon and metal oxide composite coated single crystal lithium nickel cobalt manganese oxide composite material. According to the single-crystal lithium nickel cobalt manganate composite material and the preparation method thereof, the preparation process is simple, and the prepared material is stable in structure and excellent in rate capability and has excellent cycle performance and conductivity.

A method utilising microwave plasma chemical vapour deposition (MPCVD) process of producing electronic device grade single crystal diamond comprising of: (a) selecting a diamond seed or substrate having a pre-determined orientation, (b) cleaning and/or etching of non-diamond phases and other induced surface damages from the diamond seed or substrate, whereby this step can be performed one or more times, (c) growing a layer of extremely low crystal defect density diamond surface on the cleaned/etched diamond seed or substrate, whereby this step can be performed one or more times, and (d) growing electronics device grade single crystal diamond on top of the layer of the low crystal defect density diamond surface.

The invention relates to a gas sensor based on a novel SnO2 nanorod monocrystalline material. The gas sensor comprises a substrate, an interdigital metal electrode layer and a sensing conductor, wherein the interdigital metal electrode layer is arranged on the substrate, and the sensing conductor is made of a SnO2 nanorod monocrystalline material with nodes on the surface and is arranged on the interdigital metal electrode layer. Since the sensing conductor of the gas sensor based on the novel SnO2 nanorod monocrystalline material is made of the SnO2 nanorod monocrystalline material with nodes on the surface, which can be produced on a large scale, and the SnO2 nanorod monocrystalline material is simple and easy to produce and has good repeatability and low production cost, the raw materials of the SnO2 nanorod monocrystalline material are easy to obtain; moreover, the SnO2 nanorod monocrystalline material consists of a large amount of nanorods in microstructure and has high surface ratio, therefore, the gas sensor has high sensitivity and is expected to be applied to industrial safety and other fields significantly.

The invention relates to a preparation method of perovskite structure lead titanate single crystal nanoparticles. The method adopts hydrothermal reaction and subsequent high-temperature calcination, a mixed precipitate of titanium and lead ions introduces reactant material of hydrothermal reaction, a potassium hydroxide mineralizer promotes partial crystallization of a product to form precursor powder, then the precursor powder is completely crystallized in a subsequent high-temperature calcination process, therefore, synthesis of perovskite structure lead titanate single crystal nanoparticles is realized. The method provided by the invention has characteristics of simple process, easy control, no pollution and low cost, and is easy for large-scale production. The prepared perovskite structure lead titanate single crystal nanoparticles have high purity, good dispersity, and uniform size.

The present invention relates to a preparation method and the structure of complex palladium malonate adjacent filo crystal, the preparation method and the structure of a single-crystal compound in the meditation chemistry. In the conjugated [pd(mal)(phen)]question mark 2H₂O single crystal: pd represents palladium, mal malonic acid, phen 1,10-phenanthroline. The method takes advantage of malonic acid and the two ligants of 1, 10-phenanthroline assists the central iron palladium (II) coordination according to a certain volume ratio and a certain sequence so as to get target complex [pd(mal)(phen)]question mark 2H₂O. According to the method, malonic acid is firstly dissolved in to the water. Then metal ion palladium is added into the solution for reaction. After that, 1, 10-phenanthroline is added. The quantity ratio of malonic acid, metal ion palladium and 1, 10-phenanthroline is 2: 1: 1. The components and molecule structure of the prepared complex by the present invention is clear and definite. The present invention is of potential drug application value.

The invention discloses a preparation method of sodium tantalum oxide (NTO) single-crystal film. The NTO single-crystal film is prepared on a strontium titanium oxide (STO) single-crystal substrate through a hydrothermal method for the first time. The method which uses tantalum pentoxide as the main raw material, sodium hydroxide as the mineralizer and a commercial two-dimensional STO single-crystal substrate as the substrate includes: intensely stirring the mixed solution of tantalum pentoxide and sodium hydroxide, adding the STO single-crystal substrate, and performing hydrothermal treatmenton the STO single-crystal substrate at high temperature to obtain the NTO single-crystal film. The preparation method is simple in process, easy to control, free of pollution, low in cost and easy toachieve large-scale production and has quite important significance to the promotion of researches and application of perovskite oxide heterojunctions in fields such as sensors, storage and spintronics.

A method for manufacturing a silicon substrate, including: performing a rapid heat treatment to a silicon substrate with a rapid-heating and rapid-cooling apparatus by maintaining the silicon substrate at a temperature that is higher than 1300° C. and not greater than a silicon melting point for 1 to 60 seconds, the silicon substrate being sliced from a silicon single crystal ingot grown by the Czochralski method; performing a first temperature decrease process down to a temperature in the range of 600 to 800° C. at a temperature decrease rate of 5 to 150° C./sec; and performing a second temperature decrease process in such a mariner that a cooling time of X seconds and a temperature decrease rate of Y° C./sec meet Y≦0.15X−4.5 when X<100 and meet Y≦10 when X≧100.

The invention provides a feeding device for a single crystal furnace, the feeding device comprises a base and a feeder main body mounted on the base, the feeder main body comprises a feeding mechanism, and the feeding mechanism comprises an upper plate in sliding connection with the base; the vibrator feeding mechanism comprises a second driving assembly, a feeding assembly connected to the upper plate in a sliding mode, a synchronous belt wheel connected with the second driving assembly, a tension sensor and an alarm electrically connected with the tension sensor, a synchronous belt is installed on the synchronous belt wheel, and the feeding assembly is connected to the upper plate in a sliding mode. The synchronous belt is connected with the feeding assembly through the tension sensor, and if the synchronous belt and the feeding assembly do not move synchronously, the alarm gives out an alarm signal. According to the device, the occupied space of the whole machine can be effectively reduced, and serious consequences caused by collision can be avoided.

Embodiments of the present invention provide a single crystal pulling device, a preparation method of single crystal silicon, and the single crystal silicon. The single crystal pulling device includesa housing, a melting member and a blocking member; the housing is provided with a receiving space, the receiving space includes at least a first chamber and a second chamber communicating with the first chamber, and the second chamber is located above the first chamber; the melting member is used for heating and melting polysilicon, and the melting member is fixed to the bottom of the first chamber; and the blocking member is located in the second chamber, and the blocking member is used for injecting an inert gas in a preset manner to prevent impurities generated by the polysilicon melting process from entering the upper chamber of the second chamber. With the single crystal pulling device disclosed by the embodiments of the invention, a large amount of impurities can be prevented from flowing into the upper chamber of the single crystal pulling device, thereby reducing the dislocation problem of a single crystal silicon rod caused by impurities, improving the crystal quality, and also facilitating the cleaning work of the receiving space.

The invention relates to a preparation method and application of a wafer-level absolute single-layer transition metal chalcogenide. The preparation method comprises the following steps that (1) first annealing treatment is carried out on a sapphire substrate to obtain a sapphire substrate with an atomic-scale flat surface; (2) a transition metal salt solution is loaded on the atomic-scale flat surface of the sapphire substrate obtained in the step (1), and secondary annealing treatment is carried out to obtain a sapphire substrate loaded with a monodisperse transition metal source; and (3) the transition metal chalcogenide is grown on the sapphire substrate loaded with the monodisperse transition metal source through a chemical vapor deposition method. A two-dimensional material prepared by the method is an absolute single layer, batch preparation on wafer-level (two inches, four inches, eight inches and twelve inches) sapphire substrates can be realized, the crystal quality is high, the single crystal size is large, the operation is simple, the cost is low, and industrialization is easy.

This invention relates to the Sb2Te3 single-crystal nanometer line ordered array and its making method, the character is that the solutin is composed of the following componets: the citric acid coordination Sb3+; 4í†1 by Moore chroma,, nitrate dissolution Te power, 2í†3 by the SbO+í†HTeO2+ Moore chroma, wherein the pH of the plating liquid is 1-3, it uses the porous alumina templetits in the plating liquid as its working electrode and the black lead as its assistant electrode, its current density is controlled between 0.2mA/cm2 and 0.5mA/cm2, plating 0.5-2h can obtain the Sb2Te3 compound single-crystal nanometer line which grows in the 110 direction; and its single-crystal with hexagonal crystal series structure grows in the 110 direction, wherein the crystal cell parameter as follows:aú¢bú¢0.426nmíócú¢3.05nm. this invention fistly is under the condition of room-temperature and open system, and it uses electrochemical sediment principle to make the Sb2Te3 single-crystal nanometer line ordered array; the device in this invention is simple, which is easy to operate, and it fits for industry production.

The invention discloses a preparation method of a tungsten disulfide single crystal with a controllable layer number. According to the preparation method, hydrogen sulfide is taken as a sulfur source,and micro-patterning on a precursor WO3 is carried out in advance to accurately regulate and control the amount of the precursor, thereby realizing controllable preparation of single-layer, double-layer, three-layer and multi-layer WS2 single crystals. The method provided by the invention has the advantages of few required raw materials, high yield and good repeatability, and the obtained crystalhas high quality and high electron mobility, and is especially suitable for preparation of large-area uniformly-distributed WS2 single crystals with controllable layer number.

The invention relates to a method for preparing cubic boron nitride (cBN) single crystal-film homogeneous P-N junction, and belongs to a method for preparing semiconductor components. The method comprises the steps of: synthesizing a semiconducting cBN single crystal with semiconductor characteristic and preparing a doped cBN film, wherein the cBN film has the semiconductor characteristic opposite to that of the cBN single crystal; the semiconducting cBN single crystal with the semiconductor characteristic is synthesized by a high-pressure direct synthesis method or a high-pressure re-diffusion method; and the doped cBN film is prepared by taking the semiconducting cBN single crystal with the semiconductor characteristic as a substrate and doping and growing a cBN film with a semiconductor type opposite to a substrate type by a vacuum vapor deposition method. The vacuum vapor deposition method is a vacuum physical vapor deposition method or a vacuum chemical vapor deposition method. The method has the advantages of reduction in processing difficulties, improvement on production efficiency, yield and the like and great improvement compared with the conventional technology for preparing a cBN homogeneous P-N junction by high-pressure systemization and re-growth processes.

The invention discloses a graphite disc turnover type GaN single crystal substrate laser pre-stripping integrated cavity. A heat preservation tray containing a phase change material is adopted to achieve heat preservation of a graphite disc, the temperature of the heat preservation tray can be kept at 700 DEG C or above within a certain period of time, the probability of growth quality problems caused by sudden temperature change or too low temperature of a GaN single crystal substrate slice is remarkably reduced, and the growth quality of GaN single crystals is improved; the integrated chamber is connected with the HVPE equipment, a certain vacuum degree or inert gas filling can be achieved in the chamber, the heating and heat preservation functions are achieved, the environment atmosphere of the GaN single crystal substrate slice in the whole transfer process can be guaranteed, and the growth quality of the GaN single crystal substrate in the subsequent process is guaranteed; the transfer tray with the heat preservation function is adopted to transfer the GaN single crystal substrate slices in the heat preservation tray in the integrated cavity in a full-disc mode, the sapphire substrate faces of all the GaN single crystal wafers face upwards, and therefore the Bernoulli adsorption transmission mode can be canceled, and the laser pre-stripping efficiency of the GaN single crystal substrate slices can be remarkably improved.

The invention provides a TiO2 single-crystal hollow square nanocone material and a preparation method and application thereof. The preparation method includes: mixing 1, 6-hexamethylene diamine and cyclohexane, and then adding Ti(OC4H9)4; adding deionized water, and stirring and mixing to obtain suspension; sealing the obtained suspension, performing heating reaction, cooling, centrifuging, precipitating and washing, and drying to obtain the TiO2 single-crystal hollow square nanocone material. Compared with the prior art, the preparation method has the advantages that the anatase TiO2 single-crystal hollow square nanocone material prepared by the method has a large amount of exposed {101} faces and large specific surface area; the TiO2 single-crystal hollow square nanocone material has excellent photocatalytic activity on organic dye rhodamine B, methyl orange and colorless organic small-molecular phenol and is high in degrading efficiency, good in stability, environmentally friendly, simple in preparation process and low in cost.

The invention is a kind of neutron phase contrast chromatographic imaging equipment, including rotational platform, sparkling body, aluminium mirror, CCD camera, comuputer and camera bellows, the sparkling body, aluminium mirror and CCD camera placed in the camera bellows, and the neutron beam reaches the sample placed on the platform, the produced diffractive neutron makes vertical incidence andis received by the sparkling body and converted into the visible light with the sample information, which then is reflected onto the CCD camera by the aluminium mirror and after digital conversion inputted into the computer.

The invention discloses a germanium single crystal slice degumming agent and a degumming method thereof. The germanium single crystal slice degumming agent comprises dichloromethane, isoamyl acetate and water, wherein the volume ratio of the dichloromethane to the isoamyl acetate is (6-9.5): (0.5-4), and the volume of the water is 5% -50% of the volume sum of the dichloromethane and the isoamyl acetate. The cost of the germanium single crystal slice degumming agent is only about 1/6 of that of acetone, and the production cost is greatly reduced; the water is used as a sealing layer, so that the volatilization of the dichloromethane and the isoamyl acetate is effectively prevented, the volatilization loss is avoided, and the use amount of the degumming agent is reduced; the degumming speedis accelerated, and the production efficiency is improved; and the loss is less in the use process, the waste liquid storage amount is considerable, recycling can be achieved through atmospheric distillation and repeated utilization is achieved, and the production cost is further reduced.

With rapid development of various industries in modern society, semiconductor materials are applied to various aspects such as application of energy and power systems, development of the information industry, a microelectronic technique, a microwave electronic technique, a photoelectronic technique, a power electronic technology, a sensor technique and the like; with successive starting of national key large and ultra-large water conservancy, thermal power generation engineering, metro, light railways and railroad engineering and with rise of the newly-developing IGBT (insulated gate bipolar transistor) industry, the problems of insufficient production capacity of zone-melting silicon single crystals, particularly, large-diameter 8-inch zone-melting silicon single crystals and relative lack of processes are highlighted. Production of the 8-inch zone-melting silicon single crystals is mainly based on manual operation control on single crystal growth. The production method of the 8-inch zone-melting silicon single crystal for an IGBT is stressed and explained from the manual production and power method, power output stability, single crystal growth angles and the like to solve the problem about the shape of the single crystal in the growth process of the 8-inch zone-melting silicon single crystal.

The invention relates to a preparation method of a duloxetine hydrochloride single crystal A. The preparation method includes a liquid-liquid interface diffusion method or a steam-liquid interface diffusion method. The preparation method is fast in preparation, simple to operate, low in cost, safe and reliable, and the single crystal prepared by the method has few defects.