Silicon-controlled rectifier and manufacturing method,Vertical power mosfet and methods of forming the same,Efficient silicon heterojunction solar cell and preparation method thereof,Continuous concentration gradient aluminum-doped cobaltosic oxide as well as preparation method and application thereof,Deep ultraviolet epitaxial wafer and preparation method thereof

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In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate semiconductor.

Silicon-controlled rectifier and manufacturing method

PendingCN110867487AWill not cause a conduction conditionApplicable anti-static protection functionSemiconductor/solid-state device manufacturingSemiconductor devicesHigh concentrationHemt circuits

The invention provides a silicon-controlled rectifier and a manufacturing method. The silicon-controlled rectifier comprises a semiconductor substrate; a first N trap, a P trap and a second N trap which are generated in the semiconductor substrate and sequentially and adjacently arranged; a first high-concentration P-type doping and a first high-concentration N-type doping which are located at theupper part of the first N trap; a second high-concentration N-type doping and a second high-concentration P-type doping which are located at the upper part of the second N trap; and a third high-concentration P-type doping which is positioned at the upper part of the P trap. The first high-concentration P-type doping and the first high-concentration N-type doping are connected to form a first device electrode; and the second high-concentration N-type doping and the second high-concentration P-type doping are connected to form a second device electrode. According to the designed and manufactured silicon-controlled rectifier, the structural characteristics of the device are symmetrically distributed, a PNPN channel can be formed when the high-voltage input and output end of positive high voltage or the high-voltage input and output end ofnegative high voltage are connected on first device pole (or the second device pole) without the conduction condition in any direction, and the bidirectional anti-static protection function of the positive high voltage and the negative high voltage can be achieved while circuit application is implemented.

Silicon-controlled rectifier and manufacturing method

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Owner:SHANGHAI HUALI MICROELECTRONICS CORP

Vertical power mosfet and methods of forming the same

ActiveCN103456790ASemiconductor/solid-state device manufacturingSemiconductor devicesGate dielectricPower MOSFET

A device includes a semiconductor layer of a first conductivity type, and a first and a second body region over the semiconductor layer, wherein the first and the second body regions are of a second conductivity type opposite the first conductivity type. A doped semiconductor region of the first conductivity type is disposed between and contacting the first and the second body regions. A gate dielectric layer is disposed over the first and the second body regions and the doped semiconductor region. A first and a second gate electrode are disposed over the gate dielectric layer, and overlapping the first and the second body regions, respectively. The first and the second gate electrodes are physically separated from each other by a space, and are electrically interconnected. The space between the first and the second gate electrodes overlaps the doped semiconductor region.

Owner:TAIWAN SEMICON MFG CO LTD

Efficient silicon heterojunction solar cell and preparation method thereof

PendingCN112802910AImprove passivation performanceAvoid dopingSemiconductor devicesPhysicsDoping

The invention discloses an efficient silicon heterojunction solar cell and a preparation method thereof, and belongs to the technical field of solar cells. A thin SiO2 layer, a hydrogenated amorphous silicon oxycarbide thin film layer, a C-doped SiO2 layer, an amorphous silicon doped N-type layer, a TCO conductive layer and an electrode are sequentially arranged on the front surface of an N-type crystal silicon wafer of the battery; a thin SiO2 layer, a hydrogenated amorphous silicon oxycarbide thin film layer, a C-doped SiO2 layer, an amorphous silicon doped P-type layer, a TCO conductive layer and an electrode are sequentially arranged on the back surface of the substrate; and the amorphous silicon doped P-type layer comprises a light B-doped amorphous silicon layer and a heavy B-doped amorphous silicon layer. According to the heterojunction solar cell with the hydrogenated amorphous carbon silicon oxide thin film as the intrinsic passivation layer, the excellent passivation effect on the crystalline silicon surface is achieved, and interface carrier recombination is reduced; and meanwhile, an improved double-diffusion B process is adopted, so that reduction of forbidden bandwidth and unnecessary passive film doping caused by diffusion of B atoms to the intrinsic amorphous silicon layer during B2H6 doping are prevented, and the conversion efficiency of the silicon heterojunction battery is improved.