29 results about "Silicon oxide" patented technology

A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water, a nitrogenous compound, and optionally abrasive particles, an oxidizing agent, or a combination thereof. The slurry composition can polish a phase-change memory device at a high rate, can achieve high polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), and can minimize the occurrence of processing imperfections (e.g., dishing and erosion) to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.

A method and system for controlling a silicon nitride etching bath provides the etching bath including phosphoric acid heated to an elevated temperature. The concentration of silicon in the phosphoric acid is controlled to maintain a desired level associated with a desired silicon nitride/silicon oxide etch selectivity. Silicon concentration is measured while the silicon remains in soluble form and prior to silica precipitation. Responsive to the measuring, fresh heated phosphoric acid is added to the etching bath when necessary to maintain the desired concentration and silicon nitride:silicon oxide etch selectivity and prevent silica precipitation. The addition of fresh heated phosphoric acid enables the etching bath to remain at a steady state temperature. Atomic absorption spectroscopy may be used to monitor the silicon concentration which may be obtained by diluting a sample of phosphoric acid with cold deionized water and measuring before silica precipitation occurs.

The invention discloses a purification method of a nano diamond ash material. The method adopts a three-step method to remove impurities in nano diamond detonated ash and comprises the following steps of: step 1, utilizing nitric acid or hydrochloric acid to remove impurities including metal oxides or metal salts; step 2, utilizing a concentrated sulfuric acid and perchloric acid united oxidization method to remove graphite carbon components in nano diamond; and step 3, utilizing hydrofluoric acid to remove silicon oxide. The invention provides a production method of the high-purity nano diamond, which has the advantages of simple process, low equipment requirements and high product purity; and the produced nano diamond can completely meet the requirements of relevant fields, particularly the application of fields including ultra-precise polishing, high-grade running-in (lubricating) oil, wear-resisting material additives, wear-resisting surface composite plating and the like.

An object of the present invention is to provide a method for manufacturing a semiconductor device in which, after crystallizing by using an element that promotes crystallization, holes are prevented from being generated in a crystalline semiconductor film with a concentration of the element in the crystalline semiconductor film decreased by performing gettering. To solve the problem, as a feature of the structure of the invention, in the case of removing a silicon oxide film formed over the semiconductor film, an etchant made of a solution containing fluorine and a substance having surface activity is used.

The invention discloses a method for preparing amorphous ultrafine silicon oxide by a hydrothermal method, which comprises the following steps: adding a surfactant into deionized water, heating to 60-80 DEG C, stirring to obtain a uniformly dispersed solution; slowly adding a silicon source solution into the above solution to obtain a mixed solution, continuing to stir for 5-10 min to allow the mass ratio of the surfactant and SiO2 in the silicon source solution to be 1%-9%; slowly adding sulfuric acid to adjust the pH to 8-12 so as to obtain a silicic acid gel precursor, allowing the mass concentration range of silica in a reaction system to be 1%-9%, transferring the silicic acid gel precursor into a stainless steel high-temperature high-pressure reaction vessel, stirring at 150-500 rpm, sealing the vessel and aging at 140-200 DEG C for 4 hours, after the reaction, allowing the system temperature to decrease to below 80 DEG C, filtering, washing, and drying at 120 DEG C for 2 hours. The method of the invention has low production cost, small silica particle sizes, and simple preparation process, and is easy to realize industrial production.

The invention relates to a zinc-aluminum coating enhanced with particles in micro-nano sizes, and belongs to the field of surface protection of magnetic materials. The coating is used for being coated on the surface of a neodymium-iron-boron permanent magnet and the zinc-aluminum coating mixed with the micro-nano particles, and the micro-nano particles are one or more kinds of titanium dioxide, silicon oxide, aluminum oxide, aluminum and cerium oxide in the micro-nano sizes. The technical scheme of the zinc-aluminum coating lies in that the micro-nano particles are mixed into the zinc-aluminum coating, so that the zinc-aluminum coating concurrently has an own anti-corrosion property of the coating and an incidental high-temperature oxidation resistant property, an incidental shock resistant property and incidental high tenacity of the micro-nano particles, and a mechanical property and a scratch resistant property of the surface coating of the anti-corrosion neodymium-iron-boron permanent magnet are greatly improved. The invention further relates to a production method of the zinc-aluminum coating enhanced with the particles in the micro-nano sizes, and the production method comprises the following steps: processing matrixes, preparing a coating solution, coating the matrixes and drying the coating solution.

The present invention discloses a decomposable environmentally-friendly heat-insulation packaging bag which comprises the following parts by weight of raw material components: 20-40 parts of straw fiber, 10-15 parts of rice husk powder, 10-15 parts of acrylate-1 and 1-dichloroethylene copolymer, 1-2 parts of zinc gluconate, 1-2 parts of gelatin, 2-8 parts of aluminum hydroxide, 2-6 parts of potassium hydroxide, 13-15 parts of furfuryl alcohol resin, 2 5 parts of zinc oxide, 0.5-1 part of talc powder, 5-6 parts of wax, 1-3 parts of silica powder, 2-4 parts of tetrahydrofuran, 8-13 parts of polyethylene, 0.5-1 part of nano-organic montmorillonite, 2-6 parts of silicon oxide powder, 2-4 parts of a foaming agent and 2-4 parts of clay. The decomposable environmentally-friendly heat-insulation packaging bag takes the environmentally friendly materials, is green and environmentally-friendly, has heat-insulation effect, and is suitable for cooked food packaging.

On a silicon substrate 201, there are formed a silicon oxide 202, an adhesion layer 203 consisting of TiO₂, a lower electrode 204 consisting of Pt, a ferroelectric thin film 205, and an upper electrode 206 consisting of Pt. A portion of the ferroelectric thin film adjacent to the upper electrode 206 is formed from a compound with a composition formula of SrBi₂ (Ta_xNb_1-x)₂O₉ where x=0.7. A compound with a value x in the composition formula being greater than 0.7 is used for the portion of the ferroelectric thin film adjacent to the upper electrode 206, so as to generate an appropriate number of grain boundaries on the surface of the ferroelectric film 205, the grain boundaries enabling implementation of anchoring effect between the ferroelectric film 205 and the upper electrode 206, thereby achieving prevention of exfoliation of the upper electrode 206 from the ferroelectric film 205. Therefore, the semiconductor memory device is free from exfoliation of the upper electrode film from the dielectric film and has a good yield.

The invention discloses a transparent high-temperature-resistant anti-corrosion nano composite ceramic coating suitable for a welding part. The coating comprises nano silicon oxide, nano aluminum oxide, nano zirconium oxide, a silicon modified water-based additive, a water-based dispersant, a water-based leveling agent, a water-based suspension stabilizer, a water-based curing agent, a water-based wetting agent, a water-based PH value regulator, a water-based low-temperature anti-freezing solution and deionized water, the transparent high-temperature-resistant anti-corrosion nano composite ceramic coating can realize transparent and ultrathin high-precision corrosion resistance on the welding part, and the used coating is high-temperature-resistant, boiling-resistant, damp-heat-resistant; meanwhile, the coating is a pure water-based environment-friendly coating, and VOCS is lower than 5 g/L; the coating reaches the food grade, meets the FDA related requirements, is easy to use, can be used in a traditional coating mode, and is high in cost performance, the maximum coating plane area of 1 kilogram of the coating can exceed 50 square meters, and the use cost is lower.

The invention discloses an etching method for the diffusion layer of a crystalline silicon solar battery sheet. First, the silicon sheet that has been diffused and doped is put into a tubular thermal oxidation furnace, and a silicon sheet is deposited on the front side of the silicon sheet by a chemical vapor deposition method. layer of silicon dioxide film; place the silicon chip in the mixed solution of phosphoric acid and nitric acid to fully react the silicon chip with the solution, wherein the molar ratio of phosphoric acid to nitric acid is phosphoric acid: nitric acid = 2-5:10; Put the chip into hydrofluoric acid solution, remove the silicon dioxide film layer on the surface of the silicon chip, and then rinse it with deionized water. The etching method of the invention has the advantages of simple process, low equipment requirements, easy monitoring of the etching process, high production efficiency, and can effectively reduce the number of low-efficiency cells caused by etching.

The invention relates to a multijunction thin film solar cell (70) of high efficiency and low-cost production. The n-layer (64, 65, 66, 67) of one of the constituent cells (61) of the multijunction thin film solar cell has a structure comprising, in the intended direction of impinging light, a sequence of an amorphous hydrogenated silicon n-layer (64), a first microcrystalline hydrogenated silicon n-layer (65), an intermediate reflector layer (66) and a second microcrystalline hydrogenated silicon n-layer (67), wherein the intermediate reflector layer is one of the following: - a single microcrystalline essentially silicon oxide layer; or - a plurality of layer sequences, each layer sequence consisting of a microcrystalline essentially silicon oxide layer and a microcrystalline silicon n-layer in the intended direction of impinging light. The invention further relates to methods of manufacturing the above n-layer (64, 65, 66, 67), and to methods of manufacturing the above-mentioned multijunction thin film solar cell (70).

According to the asymmetric induced room-temperature high-sensitivity photoelectric detector and the preparation method thereof provided by the invention, the tungsten sulfide material is transferred on the silicon substrate covered with the silicon oxide, the graphene material is transferred on one end of the tungsten sulfide material to realize covering contact, and the contact electrode is prepared on one end of the tungsten sulfide material covered with the graphene material to realize the asymmetric induction room-temperature high-sensitivity photoelectric detector. The contact electrode and the lead electrode serve as one end of the device; a metal electrode or a metal grating is directly prepared on the other end of the tungsten sulfide material to serve as a contact electrode and a lead electrode of the other end of the device. The invention provides an asymmetric induced room-temperature high-sensitivity photoelectric detection device, which solves the problem that a conventional metal WS2 metal device has no net light response under uniform all-light irradiation, retains the original photoelectric characteristics of a WS2 material, and enables high-sensitivity and multifunctional photoelectric detection at room temperature to have popularization and use values.

The invention provides a production and preparation method of a pesticide residue removal agent. The production and preparation method comprises the steps that a silicon oxide sol water solution is pre-formed, a silver-containing titanium oxide precursor solution is added into the silicon oxide sol water solution, thus the hydrolysis process of a titanium oxide precursor and generation of titaniumoxide particles are limited by a silicon oxide sol network, and overgrowth of the titanium oxide particles is controlled accordingly. The particle size of prepared nanometer titanium dioxide is smaller than 3 nm, the catalytic activity is high, and dispersion is stable. Ferric oxide nanoparticles are introduced into the preparation process to form a complex with titanium dioxide particles, the reaction catalytic activity is enhanced, and parts of reaction products can be flocculated and precipitated and thus are conveniently removed.

The invention belongs to the technical field of materials, and in particular relates to a stainless steel grinding fluid containing silicon oxide and diamond and a preparation method of the stainlesssteel grinding fluid. The stainless steel grinding fluid is prepared from following raw materials by weight percent: 30-60% of silicon oxide fine polishing liquid, 0.5 -2% of diamond powder, 1-5% of microcrystalline cellulose, 0.005-0.02% of a suspending agent, and the balance of water. The stainless steel grinding fluid is uniform and stable, and surface scratches of the polished stainless steelmaterials are reduced and shallow. The grinding fluid has obvious mirror effect, which is favorable for subsequent fine polishing, and can be widely applied to components of precise instruments such as mobile phones.

The invention discloses a composite electrolyte material and a preparation method thereof and belongs to the technical field of lithium secondary ion battery electrolytes. Polymer fibers are prepared by an electrostatic spinning method, then silicon oxide/polymer composite fibers are prepared by a polycondensation method, and the silicon oxide/polymer composite fibers are soaked in an ionic liquid electrolyte for adsorption treatment to obtain the ionic liquid/silicon oxide/polymer fiber composite electrolyte material. A silicon oxide/polymer composite fiber material is used as a skeleton, has high adsorption space and adsorption efficiency, and can absorb a large amount of active ionic liquid components; the ionic liquid containing the lithium salt is used as an active liquid component for loading ionic conduction, has the characteristics of high ionic conductivity, non-volatility, non-flammability, chemical stability and the like, and is applied to a lithium battery system, so safety of the battery is effectively improved; the composite electrolyte material provided by the invention has high ionic conductivity and high thermal decomposition temperature, and meets the normal operation of the lithium secondary battery.

The invention relates to the technical field of medical materials, and particularly discloses a photoresponse silicon dioxide material and a preparation method and application thereof.The photoresponse silicon dioxide material contains dendritic mesoporous silicon dioxide, and the surface of the dendritic mesoporous silicon dioxide is modified with a fluorinated silane coupling agent and grafted with carboxylated spiropyrane. The photoresponse silicon dioxide material has the characteristics of high biocompatibility, good stability, high drug loading capacity, high encapsulation efficiency, low toxic and side effects and the like, and can be used for delivering macromolecular drugs. The photoresponsive silicon dioxide material is converted between hydrophilicity and hydrophobicity under light control, so that the photoresponsive silicon dioxide material has a photoresponsive drug controlled release effect and is suitable for skin drug delivery.

The invention relates to a silicon dioxide aerogel reinforced copper-based composite material and a preparation method thereof, and belongs to the technical field of metal materials and preparation thereof. The composite material comprises, by mass, 5% or less of silicon dioxide aerogel and the balance copper. During preparation, copper powder and silicon dioxide aerogel powder are weighed according to a proportion and mixed to be uniform, the mixed powder is pressed into a block in a steel die by using a hydraulic press to obtain a copper-silicon dioxide intermediate alloy; the copper-silicondioxide intermediate alloy and pure copper are molten through a vacuum induction furnace and cast into an ingot, and the silicon dioxide aerogel reinforced copper-based composite material is obtained. Compared with pure copper ingot casting, the copper-based composite material prepared by the preparation method has higher comprehensive mechanical property and lower density and conductivity, and therefore the material is suitable for the field with high requirements on the mechanical property and the conductivity.

The invention belongs to the field of water environment treatment, and particularly relates to a preparation method and application of a hydroxyethyl cellulose modified scale inhibitor capable of effectively inhibiting silicon dioxide scale bodies in a green and efficient manner. The green modified cellulose scale inhibitor is prepared by taking hydroxyethyl cellulose as a raw material, ammonium persulfate as an initiator and N-(3-dimethylaminopropyl) methacrylamide as a grafting monomer through a grafting reaction. According to the method, a grafting chain containing an amide group and a tertiary amine group can be introduced to a cellulose molecular chain, so that scale forming substances can be effectively dispersed, and the efficient environment-friendly scale inhibitor is obtained. The scale inhibitor prepared by the invention can effectively inhibit the generation of scale bodies and prevent the size of the scale bodies from being increased; when the scale inhibitor is applied to a reverse osmosis system, the reduction of membrane flux is effectively relieved, and the membrane has a good application prospect in controlling silicon dioxide scaling on the surface of the reverse osmosis membrane.

The invention discloses a composite nano photocatalytic material as well as a preparation method and application thereof, and belongs to the technical field of photocatalytic materials. The composite nano photocatalytic material is prepared according to the following steps: adding silicon dioxide into deionized water, uniformly dispersing, adding pyrrole and potassium persulfate, and carrying out in-situ polymerization reaction to obtain silicon dioxide coated polypyrrole; the preparation method comprises the following steps: taking water as a solvent, adding aminated zinc oxide, uniformly stirring, adding silicon dioxide coated polypyrrole, and stirring at 50-60 DEG C to obtain the composite nano photocatalytic material. The composite nano photocatalytic material prepared by the invention has the advantages that the photocatalytic effect is improved, and the COD (Chemical Oxygen Demand) removal rate is increased.

The invention discloses a preparation method of a 12 [mu]m battery aluminum foil. The 12 [mu]m battery aluminum foil is obtained through the steps of smelting, cast rolling, cold rolling, foil rolling and slitting; the specific smelting method comprises the steps that copper, silicon, iron, magnesium, zinc, manganese, titanium, an additive and aluminum are mixed and smelted, refining is carried out, standing is carried out after refining is completed, and melt is obtained; the additive is prepared by mixing the raw materials including expandable graphite, a strontium-titanium dioxide-silicon dioxide composite nano material, aluminum powder and polydimethylsiloxane. Through specific raw material combination, the basic mechanical performance is guaranteed.

A semiconductor device whose performance is improved is disclosed. In the semiconductor device, an offset spacer formed in a memory cell is formed by a laminated film of a silicon oxide film and a silicon nitride film, and the silicon oxide film is particularly formed to directly contact the sidewall of a memory gate electrode and the side end portion of a charge storage film; on the other hand, an offset spacer formed in a MISFET is formed by a silicon nitride film. Particularly in the MISFET, the silicon nitride film directly contacts both the sidewall of a gate electrode and the side end portion of a high dielectric constant film.

The invention discloses a method for forming an amorphous silicon oxide laminated structure, which comprises the steps of forming a silicon oxide layer by using chemical vapor deposition, wherein the reactants comprise chlorosilane and oxygen free radicals. The method reduces the reaction temperature of the amorphous silicon layer forming process, avoids repeated heating and cooling processes in the reaction process, reduces time consumption and improves the capacity.

The invention relates to a catalyst for removing nitric oxide, the catalyst is mainly used for solving the problems that in the prior art, the activity of the catalyst is low or the selectivity is poor under a high-temperature condition, and the nitrogen oxide cannot be effectively removed. A SOL-GEL method is adopted, a certain amount of silica SOL is mixed with an aqueous solution or alcohol solution containing a soluble aluminum salt to obtain a mixture, the mixture is dropwise added into an inorganic silver salt aqueous solution, after aging, drying, roasting and the like, a silver catalyst loaded with silicon oxide and aluminum oxide is prepared, metal oxides of IVB and VB are adopted for modification, and the problems are well solved. The catalyst is used in the reaction for removingnitrogen oxide waste gas, can be used to reduce nitrogen oxides effectively, has high catalytic activity and long service life, is simple and convenient to prepare and relatively low in price, and issuitable for industrial application.