Method for forming amorphous silicon oxide laminated structure

[0031] In the prior art, the reactant used in the deposition process of the amorphous silicon layer is silane, and the reaction temperature is about 560°C; while the reactant used in the deposition process of the silicon oxide layer is silane and nitrogen oxide, and the reaction temperature is about 720°C. The reaction temperature is different, so the amorphous silicon layer and the silicon oxide layer are respectively carried out in different deposition equipment. The semiconductor substrate is repeatedly transferred between two deposition equipments, on which layers of amorphous silicon and silicon oxide are alternately formed.

[0032] figure 2 and image 3 The relationship between the temperature and time of the semiconductor substrate during the formation of the amorphous silicon layer and the silicon oxide layer is given respectively. Such as figure 2 As shown, the formation process of the amorphous silicon layer is mainly divided into three stages: stage I, stage II a