Method for manufacturing high-evenness grid lines

一种栅极线条、均匀度的技术，应用在半导体制造领域，能够解决成本高、均匀性有限、产能低等问题

Active Publication Date: 2014-01-01
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, the process of the above scheme is relatively complicated, the production capacity is high and the cost is high, and the uniformity is limited

Method used

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Comparison scheme
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Embodiment Construction

[0041] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0042] Figure 4A to Figure 4G A method for fabricating high-uniformity gate lines according to a preferred embodiment of the present invention is schematically shown.

[0043] Specifically, as Figure 4A to Figure 4G As shown, the method for making high-uniformity gate lines according to a preferred embodiment of the present invention includes:

[0044] The first step: on the substrate silicon wafer 1, directly deposit the polysilicon film 4 in sequence, and then directly coat the spin-coated carbon film 21, the silicon-containing hard film 22, and the first photoresist 3 in sequence, such as Figure 4A shown; wherein, it should be noted that the silicon-containing hard film 22 and the first photoresist 3 are combined together as a mask for e...

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PUM

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Abstract

The invention discloses a method for manufacturing high-evenness grid lines. The method comprises the steps of sequentially and directly depositing a polycrystalline silicon thin film on a substrate silicon wafer, then sequentially directly coating the polycrystalline silicon thin film with a spinning coating carbon thin film and a first photoresist, carrying out exposure and development so as to form a first grid line structure in a first photoresist film, coating the first photoresist with a curing material containing alkyl groups and amidogens to cure the first grid line structure in the first photoresist, heating the curing material to enable the cure material to be reacted with the surface of the first photoresist to form an isolating film which does not dissolve into a second photoresist, coating the cured first photoresist with the second photoresist, completing the exposure and the development to form a first line-end cutting graph in a second photoresist film, using the second photoresist film as a covering film, etching the isolating film and a first grid line to form a second line-end cutting graph, using the remaining isolating film and the first grid line as a covering film, and continuously and sequentially etching the spinning coating carbon thin film and the polycrystalline silicon thin film to form a second grid line structure.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, and more specifically, the invention relates to a method for manufacturing high-uniformity gate lines. Background technique [0002] As the integration level of semiconductor chips continues to increase, the feature size of transistors continues to shrink, posing more and more challenges to the photolithography process. The traditional photolithography process usually adopts organic bottom anti-reflective coating (BARC) with polymer materials as the main body to improve the capability of the photolithography process. Figure 1A It is a schematic diagram of the structure of the substrate silicon wafer 1, the organic anti-reflection film 2, and the photoresist 3. The organic anti-reflection film can also expand the adjustable range of the etching process and improve the uniformity of the pattern structure after etching. [0003] After entering the 45nm technology node, it is increasingly...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L21/027H01L21/3213G03F7/00
CPCG03F7/70466H01L21/28044H01L21/28123
Inventor 毛智彪
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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