51results about "Photomechanical apparatus" patented technology

Fine wirings are made by a method having the steps of painting a board with metal dispersion colloid including metal nanoparticles of 0.5 nm-200 nm diameters, drying the metal dispersion colloid into a metal-suspension film, irradiating the metal-suspension film with a laser beam of 300 nm-550 nm wavelengths, depicting arbitrary patterns on the film with the laser beam, aggregating metal nanoparticles into larger conductive grains, washing the laser-irradiated film, eliminating unirradiated metal nanoparticles, and forming metallic wiring patterns built by the conductive grains on the board. The present invention enables an inexpensive apparatus to form fine arbitrary wiring patterns on boards without expensive photomasks, resists, exposure apparatus and etching apparatus. The method can make wirings also on plastic boards or low-melting-point glass boards which have poor resistance against heat and chemicals.

An exposure apparatus, which exposes a pattern on an original onto a substrate while a liquid fills a gap between a projection optical system and the substrate, includes a liquid holding plate which sets the substrate held on a substrate stage and the peripheral area around the peripheral portion of the substrate to form substantially the same surface to hold the liquid on the peripheral portion of the substrate. The liquid holding plate includes an inner member formed in the peripheral area of the peripheral portion of the substrate and holds the liquid on the peripheral portion of the substrate, an outer member formed on the peripheral portion of the inner member and attaching to the substrate stage, and a connection member which connects the inner member to the outer member.

A stage system for a lithographic apparatus includes a stage, an over-determined number of actuators to act on the stage, at least two sensors to measure a position dependent parameter of the stage and to provide a respective sensor signal. The at least two sensors are arranged to measure the respective position dependent parameters in a same degree of freedom. A controller is provided to provide a controller output signal to at least one of the actuators in response to a setpoint and the position dependent parameter as measured by at least one of the sensors. A further controller is provided with the position dependent parameters measured by the sensors. The further controller is configured to determine a difference between the position dependent parameters from the sensors and to provide a further controller output signal to at least one of the actuators in response to the determined difference.

An immersion exposure apparatus projects and transfers a pattern onto a photosensitive substrate through a projection optical system with a liquid being supplied to the immersion space between the projection optical system and the photosensitive substrate. The immersion exposure apparatus includes a temperature detector which detects the temperature of the liquid in the immersion space, and a controller which controls, on the basis of an output from the temperature detector, the position and/or tilt of a movable unit that influences the imaging performance of the pattern to be projected onto the photosensitive substrate.

The present invention provides a series of methods, compositions, and articles for patterning a surface with multiple, aligned layers of molecules, by exposing the molecules to electromagnetic radiation. In certain embodiments, a single photomask acts as an area-selective filter for light at multiple wavelengths. A single set of exposures of multiple wavelengths through this photomask may make it possible to fabricate a pattern comprising discontinuous multiple regions, where the regions differ from each other in at least one chemical and/or physical property, without acts of alignment between the exposures. In certain embodiments, the surface includes molecules attached thereto that can be photocleaved upon exposure to a certain wavelength of radiation, thereby altering the chemical composition on at least a portion of the surface. In some embodiments, the molecules attached to the surface may include thiol moieties (e.g., as in alkanethiol), by which the molecule can become attached to the surface. In some embodiments, the molecules may be terminated at the unattached end with photocleavable groups. In other embodiments, a molecule that was photocleaved may be exposed to another molecule that binds to the photocleaved molecule. In certain cases, the molecules may be terminated at the unattached end with hydrophilic groups that may, for example, be resistant to the adsorption of proteins. In other cases, the molecules may be terminated at the unattached end with end groups that are not resistant to the adsorption of proteins. In certain embodiments, the techniques are used to pattern simultaneously two different regions that are resistant to the adsorption of proteins, and a third region that does not resist the adsorption of proteins.

The invention discloses a manufacturing method of a multi-channel light filtering micro lens array. According to the manufacturing method of the multi-channel light filtering micro lens array, due to the facts that a light filtering layer with the light filtering function is manufactured on a substrate by using photoresist with different colors and combining a traditional photoetching method, and then the micro convex lens array is directly manufactured on the light filtering layer through a hot melting method, the purpose that micro convex lenses have the integrated light filtering function can be achieved, additional optical filter structures are not needed, and development of the compact multi-channel light filtering micro lenses is achieved; a plurality of optical channels are arranged, and each optical channel can independently obtain image information of the corresponding wave band; due to the facts that the photoetching technology is adopted, and a first mask plate is used in cooperation, alignment between optical filters and the micro lens array is avoided; due to the fact that a light barrier layer is additionally arranged between every two adjacent micro convex lenses on the substrate, influence caused by incident stray light on the micro lenses can be reduced; the micro convex lens array can be applied to a multispectral imaging system, and monochrome imaging and color reconstruction are achieved; meanwhile, the micro convex lens array is compact in structure, and miniaturization of the multispectral imaging system is facilitated.

The invention discloses a microelectronic temperature sensor and a preparation method thereof. Specifically, the sensor is a graphene oxide capacitive temperature sensor based on a post-COMS MEMS micro-processing technology. A graphene oxide material is a new type nano-material which has a high dielectric constant, and a dielectric constant value can be changed rapidly along with the change of a temperature. Compared with the temperature sensors such as a common Pt resistor and a PN junction, the microelectronic temperature sensor has the advantages that because a current does not pass through a device, the influence of self-heating effect on a measurement process is avoided when the measurement is carried out, the measurement error is low, the heat loss is low and the dynamic response time is short. Because the dielectric constant of the graphene oxide can be increased rapidly along with the rise of the temperature at the low temperature, a method for detecting a required high-sensitivity temperature sensor at the low temperature is realized. Through combination of the post-COMS MEMS micro-processing technology, the temperature sensor is small in size, low in cost and short in response time.

The present invention generally relates, to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes an internal etch stop layer and either a deposited substantially transparent layer, deposited partially transparent layer or deposited opaque thereon in an otherwise conventional photomask. The photomask of the present invention is used to make semiconductor devices or integrated circuits. In a preferred embodiment of the present invention is directed to an aaPSM comprising: a patterned opaque layer with a first set of at least one light transmitting openings and a second set of at least one light transmitting openings; a deposited substantially transparent layer underlying the opaque layer wherein the deposited substantially transparent layer has corresponding light transmitting openings to each of the openings of the first set of at least one light transmitting openings, a substantially transparent etch stop layer underlying the deposited substantially transparent layer, and a substantially transparent substrate underlying the transparent etch stop layer. In a preferred embodiment, the internal substantially transparent etch stop layer of the present invention is comprised of MgF_x and even more particularly may be comprised of MgF₂ deposited under evaporation. Other materials that may be used for the substantially transparent etch stop layer of the present invention include but are not limited to Al₂O₃ and Al_xN_y.

A method for fabricating a photomask includes forming an anti-reflection layer on a transparent substrate. A transparent layer is formed on the anti-reflection layer. Patterning the transparent layer forms a transparent bar layer so that a portion of the ant-reflection layer is exposed. An opaque layer is formed over the substrate. A polishing process is performed to polish the opaque layer and the transparent bar layer so that a top portion of the transparent bar layer is polished and exposed. An etching back process is performed to remove a portion of the opaque layer so that the anti-reflection layer is exposed and the remains of the opaque layer forms a spacer with uniform thickness on each side of the transparent bar layer. The transparent bar layer is removed by etching so as to form the photomask.

Method of forming fine patterns and methods of fabricating semiconductor devices by which a photoresist (PR) pattern may be transferred to a medium material layer with a small thickness and a high etch selectivity with respect to a hard mask to form a medium pattern and the hard mask may be formed using the medium pattern. According to the methods, the PR pattern may have a low aspect ratio so that a pattern can be transferred using a PR layer with a small thickness without collapsing the PR pattern.

An overlay mark for checking alignment accuracy between a former layer and a later layer on a wafer is described, including a former pattern as a part of the former layer, and a later pattern as a part of a patterned photoresist layer defining the later layer. The former pattern has two parallel opposite edges each forming a sharp angle α with the x-axis of the wafer. The later pattern also has two parallel opposite edges each forming the sharp angle α with the x-axis of the wafer.

Disclosed is an imprinting apparatus and imprinting method using the same that prevent a process of forming a pattern on a substrate from being affected by flatness of a stage. The imprinting apparatus comprises a chamber unit in which a process of forming a pattern on a substrate is carried out; a stage for supporting the substrate on which a resin layer is formed; an installing member positioned above the stage and having a mold member attached to transform the resin layer so as to form the pattern on the substrate; and a first spraying unit for spraying fluid to separate the substrate supported by the stage from the stage, wherein the installing member moves the mold member in the direction getting near to the substrate separated from the stage so that the mold member and the resin layer are brought into contact with each other.

On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.

A modified dimethylnaphthalene formaldehyde resin is disclosed, which is excellent in heat resistance and useful for thermosetting resins which are used for an electrical insulating material, a resin for resist, a semiconductor sealing resin, an adhesive for printed wiring board, a matrix resin for electrical laminate or prepreg to be mounted in electrical instruments, electronic instruments, industrial instruments, etc., a buildup laminate material, a resin for fiber-reinforced plastic, a sealing resin for liquid crystal display panel, a paint, a variety of coating agents, an adhesive, a laminate for electrical or electronic parts, a molded article, a coating material, a sealing material and the like, the modified dimethylnaphthalene formaldehyde resin being obtained by modifying a polyfunctional dimethylnaphthalene formaldehyde resin having a constituent unit represented by the following general formula [1] in a molecule thereof with at least one member selected from the group consisting of a phenol represented by the following general formula [2], a naphthol represented by the following general formula [3] and a naphthol represented by the following general formula [4] (provided that at least any of the naphthol represented by the general formula [3] or the naphthol represented by the general formula [4] must be included).

The invention discloses a method for a reactive ion beam etching (RIBE) of a blazed convex grating, which comprises the following steps: step one: placing a masking quartz substrate of the convex grating; step two: ensuing an angle of the ion beam direction and a groove at the peak of the grating to be theta if the spherical radius of the masking quartz substrate of the convex grating is R and the blazed angle of the blazed convex grating is theta; step three: manufacturing an etching slit; step four: placing the slit; and step five: etching the convex grating. The technical scheme of the invention adopts a subsection etching method, namely, a subsection ion beam etching is carried out on the masking quartz substrate of the convex grating with a sine groove shape, so that the relative error of the blazed angle of the blazed convex grating which is etched is 0.1 in theory.

To provide a planarization method which does not depend upon the size and the density of a wiring pattern and in which a reliable wiring system and a Josephson device can be formed and wiring structure, an insulation layer is planarized by forming a reversal pattern mask of wiring and selectively removing the insulation layer on the wiring.

The embodiment of the invention relates to the technical field of liquid crystal display devices and specifically discloses a color filter and a manufacturing method thereof. The color filter comprises a glass substrate, as well as a black matrix and a pixel resin layer which are formed on the glass substrate, wherein the black matrix and the pixel resin layer are conductive and respectively contain electric charges with opposite polarities. According to the color filter and the manufacturing method thereof, provided by the embodiment of the invention, the structure and process of a liquid crystal panel are simplified; in addition, as the black matrix and the pixel resin layer have the opposite polarities and attraction power, even the edges of the black matrix and the pixel resin layer are not superposed, the black matrix and the pixel resin layer can be closely jointed, thus the light leakage phenomenon caused by poor contact is further avoided, and the display quality is ensured.

A method of fabricating a rigid island pattern on a stretchable layer having a low Young's modulus and a stretchable electronic device platform using the same are disclosed. The stretchable electronic device platform, which is proposed by the present disclosure and has the rigid island pattern on the stretchable layer having a low Young's modulus, includes a stretchable substrate having a first Young's modulus, a Silbione® layer coated with a stretchable layer having a Young's modulus lower than the first Young's modulus on the stretchable substrate, and a fixed layer which is made of a photoresist such as SU-8 or a UV curable resin and has a Young's modulus higher than the first Young's modulus, and in which the rigid island pattern and the meandering stretchable interconnector pattern are formed on the stretchable layer by a photolithography process.

The invention relates to a system (1) for detecting motion of a body (2) comprising a first elongated grating strip (4) coupled to said body and a separate and substantially stationary second elongated grating strip (5) crossing said first elongated grating strip. The system further comprises optical detection means (6) arranged to receive one or more light beams diffracted at said first and second elongated grating strips to detect motion of said body. The invention further relates to a method for detecting motion of a body (2) and to a body processing or inspection system.

The invention relates to a manufacturing method of electron emitting member, a cold cathode field emission device and a cold cathode field emission device, comprising the steps of (a) forming, on a predetermined region of a cathode electrode 11 formed on a supporting member 10, a composite layer having a constitution in which carbon nanotube structures 20 are embedded in a matrix 21, and (b) allowing a peel-off layer 24 to adhere onto the surface of the composite layer 22 and then mechanically peeling off the peel-off layer 24, to obtain an electron emitting portion 15 in which the carbon nanotube structures 20 are embedded in the matrix 21 in a state where the top portion of each carbon nanotube structure 20 is projected.

Provided is a semiconductor manufacturing apparatus, which is capable of realizing fine-pitch patterns and thus improving stabilization of patterning precision. The semiconductor manufacturing apparatus comprises: a photoresist processing unit for forming a photoresist pattern in a predetermined region on a substrate to which a predetermined process is applied; and a substrate processing unit for forming a thin film on the surface of at least the photoresist pattern.

A method of measuring overlay between a first structure and a second structure on a substrate is provided. The structures include equidistant elements, such as parallel lines, wherein the equidistant elements of the first and second structure alternate. A design width CD₁ of the elements of the first structure is different from a design width CD₂ of the elements of the second structure. The difference in design width can be used to identify measurement points having incorrectly measured overlay errors.

A method is provided for manufacturing an etched surface. The method includes the steps of assembling a plurality of particles on the surface of a substrate and etching the plurality of particles to vary the size and spacing of the particles on the surface of the substrate. The method further includes depositing a mask material on the substrate including the etched particles, removing the etched particles from the substrate, thereby exposing the substrate beneath the plurality of particles, and selectively etching the substrate exposed after removal of the plurality of particles.

An occupancy based pattern generation method for a maskless lithography system using micromirrors is disclosed. The present invention includes the steps of recognizing a pattern upon the substrate through the extraction of the pattern boundary and the construction of the pattern region and recognizing the pattern upon the micromirror through the confirmation of the micromirror dependent lithographic pattern region, the extraction of the micromirror dependent pattern based on the occupancy, and the construction of the stream of binary patterns containing binary reflection information for the micromirrors in accordance with the substrate scrolling.

The present disclosure relates to mold components and imprint lithography techniques applied on the basis of organic mold materials in order to form polymer microstructure elements. It has been recognized that adapting surface characteristics of at least one mold component may significantly enhance performance of the lithography process, in particular with respect to suppressing residual polymer material, which in conventional strategies may have to be removed on the basis of an additional etch process.

An object of the present invention is to provide a flexographic printing plate having excellent ink transferability in a solid portion and the like and having good printing quality in a halftone portion. The flexographic printing plate of the present invention is a flexographic printing plate having a relief layer including a non-image area and an image area, in which the image area has a halftone dot portion having a halftone dot area ratio of more than 0% and less than 100%, and a solid portion having a halftone dot area ratio of 100%, small dots in the halftone dot portion and the solid portion or small dots in the halftone dot portion have two or more recessed portions having different depths according to a halftone dot area ratio, and the two or more recessed portions having different depths are recessed portions whose depth becomes deeper as the halftone dot area ratio increases.