33 results about "Resist" patented technology

Fine wirings are made by a method having the steps of painting a board with metal dispersion colloid including metal nanoparticles of 0.5 nm-200 nm diameters, drying the metal dispersion colloid into a metal-suspension film, irradiating the metal-suspension film with a laser beam of 300 nm-550 nm wavelengths, depicting arbitrary patterns on the film with the laser beam, aggregating metal nanoparticles into larger conductive grains, washing the laser-irradiated film, eliminating unirradiated metal nanoparticles, and forming metallic wiring patterns built by the conductive grains on the board. The present invention enables an inexpensive apparatus to form fine arbitrary wiring patterns on boards without expensive photomasks, resists, exposure apparatus and etching apparatus. The method can make wirings also on plastic boards or low-melting-point glass boards which have poor resistance against heat and chemicals.

A substrate treating apparatus has an antireflection film forming block, a resist film forming block and a developing block arranged in juxtaposition, each of these blocks including treating modules and a single main transport mechanism. The main transport mechanism transports substrates within each block, and transfers the substrates between the blocks through inlet substrate rests and outlet substrate rests provided as separate components. This construction realizes improved throughput of the substrate treating apparatus.

A microencapsulated botanical insect-resist agent comprises 50-70 parts of microcapsule core materials, 5-10 parts of microcapsule adhesives and 20-30 parts of microcapsule wall materials by weight, wherein the core material is one or more of fennel essential oil, folium artemisiae argyi essential oil, cinnamon essential oil and clove essential oil; the adhesive is one or more of gelatine, peach gum, glycerol and ethyl acrylate; and the wall material is one or more of porous starch, cyclodextrin and diatomite. When used for grain storage, the insect-resist agent can achieve the sustained release and efficient insect-resist effects on sitophilus zeamais and tribolium confusum. The insect-resist agent achieves sustained release through one-time use and can lengthen the storage time, reduce the insect-resist working capacity and lower the grain storage cost.

The present invention provides a chemically amplified resist composition including a novel polymer, a photoacid generator, and a solvent: The chemically amplified resist can form a resist pattern that is excellent in adhesiveness with a low dependency to the substrate, transparency at the far ultraviolet wavelength range such as KrF Excimer laser or ArF Excimer laser, dry etch resistance, sensitivity, resolution, and developability. In addition, the polymer contains a maximum number of saturated aliphatic rings to enhance etching resistance, and additionally includes an alkoxyalkyl acrylate monomer introduced as a solution to the problem with the conventional polyacrylate resist in regard to edge roughness of the pattern, to form a uniform edge of the pattern because the alkylalcohol compound generated together with a formaldehyde and a carboxylate compound by a deprotection reaction of the alkoxyalkyl acrylate monomer with an acid acts as a solvent or an antifoaming agent in the pattern.

The present invention relates to preparation of patterned reticles to be used as masks in the production of semiconductor and other devices. Methods and devices are described utilizing resist and transfer layers over a masking layer on a reticle. The methods and devices produce small feature dimensions in masks and phase shift masks. The methods described for masks are in many cases applicable to the direct writing on other workpieces having similarly small features, such as semiconductor, cryogenic, magnetic and optical microdevices.

One embodiment provides a system for determining a process model for a photolithography process. The photolithography process can use multiple exposure-and-development steps to create features on a wafer. When the photolithography process exposes the wafer to a layout, the wafer can include topography variations which were caused by previous exposure-and-development steps. The process model can be used to predict patterns that are created on the wafer when the wafer is exposed to a second layout, wherein the wafer includes topography variations that were caused by resist features that were created when the wafer was exposed to a first layout. The process model can include a first term and a second term, wherein the first term is convolved with a sum of the first layout and the second layout, and wherein the second term is convolved with the second layout.

The present invention is configured to: form, on a substrate, a neutral layer having an intermediate affinity to a hydrophilic polymer and a hydrophobic polymer; form a resist pattern by performing exposure processing on a resist film formed on the neutral layer and then developing the resist film after the exposure processing; perform a surface treatment on the resist pattern by supplying an organic solvent having a polarity to the resist pattern; apply the block copolymer onto the neutral layer; and phase-separate the block copolymer on the neutral layer into the hydrophilic polymer and the hydrophobic polymer.

Method of forming fine patterns and methods of fabricating semiconductor devices by which a photoresist (PR) pattern may be transferred to a medium material layer with a small thickness and a high etch selectivity with respect to a hard mask to form a medium pattern and the hard mask may be formed using the medium pattern. According to the methods, the PR pattern may have a low aspect ratio so that a pattern can be transferred using a PR layer with a small thickness without collapsing the PR pattern.

A resist removing device 1 functions to remove a resist from a substrate while preventing occurrence of popping phenomenon and at the same time attains reduction in cost of energy for the resist removing and has a simplified constitution. The resist removing device 1 is equipped with a chamber 2 for containing therein a substrate 16 (for example, a substrate having a high-doze ion implanted resist), and with a pressure below the atmospheric pressure, the chamber 2 is fed with ozone gas, unsaturated hydrocarbons and water vapor. The ozone gas may be an ultra-high concentrated ozone gas that is produced by subjecting an ozone containing gas to a liquefaction-separation with the aid of a vapor pressure difference and then vaporizing the liquefied ozone. For cleaning the substrate 16 thus treated, it is preferable to use ultra-pure water. The chamber 2 is equipped with a susceptor 15 for holding the substrate 16. The susceptor 15 is heated to a temperature of 100° C. or below. An example of the means of heating the susceptor is a light source that emits infra-red rays.

An etching method for forming a multi-step surface on a substrate includes: (1) coating a first photo-resist layer on a predetermined surface of the substrate; (2) coating a second photo-resist layer on the first photo-resist layer, the second photo-resist layer having a characterization opposite to that of the first photo-resist layer; (3) exposing the second photo-resist layer through a first mask so as to form a first removal region; (4) developing the second photo-resist layer to remove the first removal region; (5) exposing the first photo-resist layer through a second mask so as to form a second removal region; (6) developing the first photo-resist layer to remove the second removal region; and (7) etching the predetermined surface of the substrate and the multi-step pattern to form a multi-step surface on the substrate. The present invention also discloses an etching method for forming features on an ABS of a slider.

The invention discloses a method for preparing an X ray exposure mask. The method comprises: coating a self-supporting thin film on the front surface of a silicon substrate; under protection of a clamping apparatus, carrying out isotropic etching on the back surface of the silicon substrate to form a hollowed self-supporting thin film; coating a metal thin film by vaporization on the front surface of the self-supporting thin film as an electroplating substrate; coating double layer electron beam resist on the metal thin film; carrying out electron beam lithography, development and reactive ion etching of the coated double layer electron beam resist to form a double layer resist pattern; electroplating metal on the double layer resist pattern to form a barrier layer of the X ray exposure mask; stripping off the double layer electron beam resist; and removing an electroplating substrate. The method can effectively avoid exposure of upper layer resist caused by back scattered electrons produced by the substrate and the metal thin film, thereby improving the accuracy of the electron beam lithography, and alleviating the problem of high mask retention rate of negative electron beam resist.

A modified dimethylnaphthalene formaldehyde resin is disclosed, which is excellent in heat resistance and useful for thermosetting resins which are used for an electrical insulating material, a resin for resist, a semiconductor sealing resin, an adhesive for printed wiring board, a matrix resin for electrical laminate or prepreg to be mounted in electrical instruments, electronic instruments, industrial instruments, etc., a buildup laminate material, a resin for fiber-reinforced plastic, a sealing resin for liquid crystal display panel, a paint, a variety of coating agents, an adhesive, a laminate for electrical or electronic parts, a molded article, a coating material, a sealing material and the like, the modified dimethylnaphthalene formaldehyde resin being obtained by modifying a polyfunctional dimethylnaphthalene formaldehyde resin having a constituent unit represented by the following general formula [1] in a molecule thereof with at least one member selected from the group consisting of a phenol represented by the following general formula [2], a naphthol represented by the following general formula [3] and a naphthol represented by the following general formula [4] (provided that at least any of the naphthol represented by the general formula [3] or the naphthol represented by the general formula [4] must be included).

A manufacture method for a trumpet-shaped contact includes the following steps of: forming a first insulating layer on a silicon underlay which is formed with an active structure, an isolation and a metal silicide; then forming a second insulating layer; forming a photosensitive resist and forming a contact hole pattern of the photosensitive resist by photoetching and developing; etching the second insulating layer and the first insulating layer to form a contact hole; returning the photosensitive resist; carrying out the etching adopting a gas with high selectivity ratio of the second insulating layer/the first insulating layer on the second insulating layer and the first insulating layer to form a trumpet-shaped contact hole; removing the photosensitive resist; filling and contacting metals as well as flatting; forming a dielectric medium layer between metals and etching a metal wire pattern; filling a first metal and flatting; continuing other manufacture processes. The trumpet-shaped contact manufactured by the method can prevent the dispersing of copper.

A method of forming an etch mask includes: providing a substrate having thereon a material layer to be etched; forming a hard mask layer consisting of a radiation-sensitive, single-layer resist material on the material layer; exposing the hard mask layer to actinic energy to change solvent solubility of exposed regions of the hard mask layer; and subjecting the hard mask layer to water treatment to remove the exposed regions of the hard mask layer, thereby forming a masking pattern consisting of unexposed regions of the hard mask layer.

The invention relates to the field of semiconductor, and specifically provides an auxiliary positioning semi-automatic fixing device for replacing photoresist nozzle in a semiconducting even glue developing equipment. The device can be used for auxiliary positioning and semi-automatic fixing during manually replacing of a plurality of photoresist nozzles and has advantages of convenient replacing, adaptation to replacing of a plurality of nozzles, accurate positioning and firm fixing. The device comprises a carriage fixing system for photoresist nozzles and a photoresist nozzle system arranged on the carriage fixing system for photoresist nozzles. The carriage fixing system for photoresist nozzles is equipped with a cylinder carriage and a nozzle carriage which are connected with each other; the cylinder carriage has a pneumatic detent fixed thereon, and locating detents are arranged on a motion portion of the pneumatic detent. The photoresist nozzle system is equipped with a nozzle body, a nozzle and a guiding fixing clamp column, wherein the nozzle and the guiding fixing clamp column are parallel and fixed on the nozzle body. According to the invention, problems in prior art, such as time-consuming and labor-consuming replacing and influence to capacity, can be solved.

A method of fabricating a rigid island pattern on a stretchable layer having a low Young's modulus and a stretchable electronic device platform using the same are disclosed. The stretchable electronic device platform, which is proposed by the present disclosure and has the rigid island pattern on the stretchable layer having a low Young's modulus, includes a stretchable substrate having a first Young's modulus, a Silbione® layer coated with a stretchable layer having a Young's modulus lower than the first Young's modulus on the stretchable substrate, and a fixed layer which is made of a photoresist such as SU-8 or a UV curable resin and has a Young's modulus higher than the first Young's modulus, and in which the rigid island pattern and the meandering stretchable interconnector pattern are formed on the stretchable layer by a photolithography process.

A composition for use as a stain blocker and a method of treating substrates therewith, said composition comprising a polymer of Formula 1 having the following repeating units in random sequence

wherein

• • R¹ is H, methyl or ethyl;
  • R² and R³ are each independently H, C₁ to about C₁₀ alkyl, —COOR⁴, CONR⁵R⁶, or —CN;
  • R⁴ is M, C₁ to about C₂₀ alkyl, or C₆ to C₁₀ aryl;
  • R⁵ and R⁶ are each independently H, C₁ to C₁₀ alkyl, C₆ to C₁₀ aryl, or R⁵ and R⁶ together with the nitrogen atom form a morpholine, pyrrolidine, or piperidine ring;
  • R⁷ is a C₄ to C₈ alkyl group; M is H, an alkali metal or alkali earth metal; h is about 10 to 100 mole %; i is 0 to about 80 mole %; j is 0 to about 60 mole %; k and n are each independently 0 to about 40 mole %; and m is 0.01 to about 0.5; provided that h+i+j+k+n equals 100, and provided that i+j+k+n is greater than zero, except when h is 100%.

In performing exposure for forming patterns being fine as well as having great density difference, adequate corrections are to be enabled for suppressing the influence from peripheries of these patterns to be a minimum and for suppressing the dimension variation within the plane of semiconductor substrate or among semiconductor substrates to a minimum. So-called lower-layer corrections are executed, in order to suppress the three-dimensional influence, namely the influence of the film-thickness distribution of a lower-layer structure body lying under a subject film to be processed with a resist. A pattern-correcting portion adjusts the amount of exposure such that it cancels the in-plane film-thickness distribution of the lower-layer structure body in respective exposure regions.

The invention belongs to the field of daily chemical products, particularly relates to bacteriostatic foot powder and a preparation method thereof, and provides bacteriostatic foot powder. The bacteriostatic foot powder comprises the following components in percentages by weight: alkannin 1-3%, cinnaldehydrum 2-4%, berberine 1-5%, patchouli alcohol 2-4%, menthol 1-2%, alkyl glycoside 2-6%, tea saponin 0.5-1.5%, dipotassium glycyrrhizinate 1-3%, a deodorant 2-10%, ethanol 5-25% and corn flour 36.5-82.5%. The bacteriostatic foot powder not only can effectively improve foot hyperhidrosis and prevent and treat foot odour, but also can inhibit bacteria, diminish inflammation and resist allergy, and effectively treats tinea pedis. Meanwhile, the provided bacteriostatic foot powder is gentle in property, and is safe and non-irritant.

The invention discloses a stitch crease-resist device for a sewing machine. The stitch crease-resist device comprises a buckle plate, an arc-shaped plate and a straight plate; the buckle plate, the arc-shaped plate and the straight plate are connected in sequence; the buckle plate and the straight plate are arranged in parallel; a threading hole is formed in the arc-shaped plate; a thread winding pipe is vertically arranged between the buckle plate and the straight plate; the length of the buckle plate is larger than that of the straight plate; a fixed through groove is formed in the part, longer than the straight plate, of the buckle plate. Overall installation is achieved through the fixed through hole in the buckle plate, and a sewing thread penetrates into the threading hole, penetrates out by winding around the thread winding pipe and then penetrates into a sewing needle. Thus, when the sewing machine is used, the sewing thread moves in the direction of the thread winding pipe to be driven by the sewing machine for sewing in order. Accordingly, the stitch in sewn fabric is attractive, the fabric is smooth and not prone to crease, the structure is simple, and manufacturing is convenient.

Disclosed is a photoresist remover composition which does not contain a benzotriazole compound and a thiol group-containing compound, and is capable of removing a resist without eroding copper or copper alloy wiring lines during a step for forming copper or copper alloy wiring lines for a semiconductor substrate or an FPD substrate. Also disclosed is a method for removing a photoresist, wherein the photoresist remover composition is used. The photoresist remover composition contains an alkanol amine in an amount of 1-50% by weight, a water-soluble organic solvent in an amount of 10-88.998% by weight and water in an amount of 10-88.998% by weight, with the total of the water-soluble organic solvent and water being 49.998-98.998% by weight. The photoresist remover composition also contains cytosine and/or creatinine as an anti-corrosive agent for copper or copper alloys in an amount of 0.002-1.0% by weight.

To prevent the prolongation of a transfer line and the generation of uneven development in an inline type developing equipment wherein supply and recovery steps of a developer to/from a substrate such as a glass substrate or the like and a rinsing step are continuously performed. In a substrate W wherein an exposed resist film is formed on its surface, a developer is supplied onto the surface of the substrate W in a developer supply part 2, and a developing reaction is progressed while it is conveyed, and then the developer is recovered in a developer recovery part 4, the substrate is cleaned and a cleaning liquid is recovered in a rinsing liquid supply/recovery part 6, and finally the substrate is fed to a drying part 8. In such a sequential developing process, when there is any substrate in a processing part on the downstream side, in a waiting part just before the processing part, e.g. in a waiting part 3 in case when the processing part is the developer recovery part 4, a roller is repeatedly turned in normal and reverse directions, thereby reciprocating the substrate as shown in a diagram 2. As a result, an area on the rear surface of the substrate W that is in contact with the roller 10a is always shifted without stopping at one place, so that the distribution of temperature becomes uniform on the substrate.

The invention discloses a PCB and a manufacturing method thereof. The PCB board comprises a PCB board body. The PCB body is provided with a TOP surface and a BOT surface opposite to the TOP surface. The PCB body is provided with one or more than one via hole area; each via hole area is provided with a plurality of via holes; the TOP surface of the PCB body forms a first window at the via hole areas by removing solder resist oil so as to be used for welding components; the BOT surface of the PCB body is covered with solder resist oil at the via hole areas; and more than one second window is formed at the position, adjacent to the via hole areas, of the BOT surface of the PCB body by removing the solder resist oil. According to the invention, the second window of the BOT surface and the viahole areas are staggered on the PCB body, and the via hole areas of the BOT surface are also covered with the solder resist oil, so that the problem of poor welding of components caused by tin leakingfrom the via holes during welding on the PCB can be avoided.

This method for manufacturing a shield printed wiring board includes: a step for preparing a printed wiring board body having a base substrate, a ground wiring provided on the base substrate, and an insulating layer covering the ground wiring and being provided with an opening so that a part of the ground wiring is exposed; a resist placement step for placing a resist resin in a predetermined pattern shape on the insulating layer; a metal layer formation step for providing a metal layer on the ground wiring exposed through the opening and on the printed wiring board body on which the resist resin is placed; and a step for removing the resist resin using a solvent, whereby the portion of the metal layer provided on the resist resin is removed along with the resist resin, and the metal layerpresent on portions other than the predetermined pattern shape is formed as a shield layer.

The present invention has an object to provide a method for forming a negative tone pattern in which DOF of a resist composition used is high and shrinkage of a film in post exposure bake is suppressed; a method for manufacturing an electronic device including the pattern forming method; and an active-light-sensitive or radiation-sensitive resin composition. The method for forming a negative tone pattern of the present invention including: a film formation step of forming a resist film on a substrate, using a resist composition; an exposing step of irradiating the film with active light or radiation; a heating treatment step of performing a heating treatment on the film irradiated with active light or radiation; and a developing step of developing the heating-treated film using a developer including an organic solvent, in which the resist composition includes a resin A having a repeating unit A with a group represented by a specific formula, a resin B having a repeating unit B with a group represented by a specific formula, and a compound that generates an acid upon irradiation with active light or radiation.