14 results about "Wavelength" patented technology

Techniques for monitoring the quality (e.g., optical and mechanical properties) in optical waveguides (e.g., photonic crystal fibers) are disclosed. Additionally, techniques for detecting and localizing defects in the waveguides are also described. Pulses of light are launched into one end of an optical waveguide. The amount of light scattered out of the same end of the waveguide (i.e., a backscattered or reflected signal) is monitored at certain wavelengths specific to the spectral characteristics of the waveguide. Transmission characteristics and defect localization can be determined from the backscattered signal.

The present invention discloses a multi-channel aerosol scattering absorption measuring instrument, comprising a light path device, a detection device and a gas path device. The light path device supplies three different wavelengths of laser entering the detection device in sequence; the detection device is provided with photoelectric detectors at multiple angles for measurement, so as to reduce the measurement error of aerosol scattering coefficient; the gas path device comprises a sample loading unit, a calibration unit and a sample discharging unit; and a light source from the light path device and a gas flow from the gas path device enter the photoacoustic cavity of the detection device respectively and are detected by a control unit. The aerosol scattering absorption measuring instrument of the present invention is characterized by multi-channel, multi-angular, full-scale and direct measurement of scattering phase function and absorption coefficient of aerosol particles, combines the function of synchronously acquiring the optical parameters of an aerosol (such as scattering coefficient, extinction coefficient, visibility, transmittance, single scattering albedo, etc.), and achieves the integrated on-line detection of different optical parameters of an aerosol with high automation degree and good stability.

The invention discloses hydrophobic and spectrum selective glass for a solar cell and a manufacturing method of the glass. The manufacturing method of the glass specifically comprises the steps that a glass body serves as a substrate, and a spectrum selective film layer and a hydrophobic film layer are arranged on one face of the substrate from bottom to top in sequence, wherein the spectrum selective film layer is used for absorbing the spectrum with the wave length equal to or shorter than 380 nm, and the hydrophobic film layer is used for reducing adsorption. By means of the glass, adsorption of dust, stains, vapor and other matter can be effectively reduced, the surface of the glass can be kept clean and dry for a long time, and high conversion output power of a crystal silicon solar cell module can be kept for a long time. In addition, optical protection can be well provided for an EVA film in the crystal silicon solar cell module, and the service life of the module is obviously prolonged. The manufacturing method is suitable for large-area film coating of encapsulating glass for the solar cell, the raw material cost and the manufacturing cost are low, and the production efficiency is high.

The invention provides a 1.2 micron wavelength all-solid-state Raman laser, and belongs to the technical field of solid-state laser. The 1.2 micron wavelength all-solid-state Raman laser comprises a pumping source, a coupling lens group and a resonant cavity. A laser crystal, a Q-switched device and a Raman crystal are arranged in the resonant cavity. Constant temperature of the crystals and the device is maintained by a temperature control system. 1.1 micron fundamental frequency light is generated by Nd:YAG ceramic, and 1252nm Raman light is outputted by the Raman crystal SrWO4. Raman shift is performed on 1.1 microns fundamental frequency wave of neodymium-doped crystals for the first time as we know. When the pumping power is 21.3W and the pulse repetition frequency is 5KHz, the maximum output power of the obtained 1252nm Raman light is 1.02W and an optical conversion efficiency is 4.79%. Dielectric films capable of outputting the required wavelength are coated on an input lens M1, an output lens M2 and the end surface of the laser crystal and the Raman crystal. The laser can be used as a pumping source of a Raman amplifier of 1.26-1.36 micron communication window band and is an important application in laser display. Besides, the laser can also be applied to the biological, medical and astronomical fields.

The embodiment of the invention discloses a display panel, a pixel driving method thereof, a display device and a mask plate. The display panel includes a plurality of pixel units, each pixel unit including a first color sub-pixel, a second color sub-pixel, a third color sub-pixel, and at least one third color compensation sub-pixel, wherein the light emitting wavelength corresponding to the thirdcolor sub-pixel is smaller than the light emitting wavelength corresponding to the first color sub-pixel and the light emitting wavelength of the second color sub-pixel. The third color compensationsub-pixel operates according to a first preset light emitting frequency, the first preset light emitting frequency being greater than 85 Hz. The technical proposal provided by the embodiment of the invention can solve the problem that the life of the sub-pixel of the light emitted by the existing display panel with higher energy is short, thereby causing the life of the display panel to be short.

The provided light-carrying wireless communication system comprises: an OADM embedded in remote station, an OXC to transmit with central station by two-way dual-fiber or single-fiber different-waveform, a core router connected with both OXC and OADM. This invention combines wireless mobile technique and optical network.

The invention discloses a drunk driving detection device. The drunk driving detection device comprises infrared laser emitting devices for emitting infrared lasers and infrared laser receiving devices for receiving the infrared lasers, wherein the infrared lasers emitted by the infrared laser emitting devices include detection light of which the wave length is positioned at an absorption peak of alcohol molecules and reference light which is free from absorption of alcohol molecules at the wave length. The infrared laser emitting devices emit the detection light and the reference light, and noise, caused by atmospheric disturbances and the like, to the detection light can be eliminated, so that the detection sensitivity is improved.

The invention discloses a magnetoelectric dipole broadband polarization torsion lens antenna and a phase compensation method thereof. The lens antenna comprises a transmitting antenna and a receiving antenna, wherein the transmitting antenna is composed of a top metal layer, a first dielectric layer, a second metal layer, a first bonding layer, a second dielectric layer and a third metal layer, and the receiving antenna is composed of a fourth metal layer, a third dielectric layer, a third bonding layer, a fifth metal layer, a fourth dielectric layer and a bottom metal layer. A conical medium coating layer is arranged at the upper end of the transmitting antenna and is mainly used for increasing the phase adjusting range; the surface of the top metal layer is provided with an electric dipole, and a magnetic dipole and a central feed structure are also arranged. The conversion from linear polarized waves to circularly polarized waves is flexibly realized by adopting a sequential rotation scheme on a transmitting antenna layer, and a super 2-bit phase compensation scheme is specifically provided, so that relatively wide 3-dB gain and AR overlapping bandwidth (47%) are realized, and only sub-wavelength profile height is realized.

The objective of the present invention is to provide a method of measuring the concentration of Fe in a p-type silicon wafer using a surface photo-voltage (SPV) method, with which the lower detectionlimit of the Fe concentration can be lowered and measurements can be obtained in a short time. According to the present invention, measurement by SPV is performed by means of a measurement mode in which light beams having a plurality of mutually different wavelengths are radiated during the same period, under conditions in which the time between readings is at least equal to 35 ms and at most equal to 120 ms and the time constant is at least equal to 20 ms, or the time between readings is at least equal to 10 ms and less than 35 ms and the time constant is at least equal to 100 ms, and the number of readings is at most equal to 12.

A position design for alignment mark which is used on the substrate having a multilayered structure, the alignment mark is arranged on the first dielectric layer of the substrate, and a metallic pattern layer is arranged in another dielectric layer below the first dielectric layer, wherein the metallic pattern layer comprises a plurality of bar shaped metal wires, and the distance between the bar shaped metal wires is smaller than the wavelength of light for aligning.

The invention discloses an 8GHz high-power microwave device. The ratio of the total axial length to the radiation microwave wavelength of a six-cavity microwave device with a coaxial inner conductor is 1.97; a first cavity, a second cavity, a third cavity, a fourth cavity, a fifth cavity and a sixth cavity are sequentially arranged in the six-cavity microwave device in the electron beam transmission direction, wherein the annular inner diameters of the cavities are 76 mm. The outer diameter of the first cavity is 100mm, and the axial length of the first cavity is 7mm; the outer diameter of thesecond cavity is 84 mm, and the axial length of the second cavity is 8 mm; the outer diameter of the third cavity is 88 mm, and the axial length of the third cavity is 6 mm; the outer diameter of thefourth cavity is 84 mm, and the axial length of the fourth cavity is 6 mm; the outer diameter of the fifth cavity is 80mm, and the axial length of the fifth cavity is 6mm; and the outer diameter of the sixth cavity is 88 mm, and the axial length of the sixth cavity is 6 mm. By adopting the 8GHz high-power microwave device provided by the invention, the axial structure size is extremely simple, and the 8GHz high-power microwave device has the advantages of miniaturization and light weight.