Apparatus and method for controlling silicon nitride etching tank

a technology of silicon nitride and etching tank, which is applied in the direction of electrical equipment, semiconductor/solid-state device testing/measurement, decorative arts, etc., can solve the problems of inability to maintain a high extraction efficiency for precipitated, undetectable parameters,

Active Publication Date: 2008-07-31
TAIWAN SEMICON MFG CO LTD
View PDF20 Cites 32 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented describes how to control a process called chemical vapor deposition (CVD) can improve its performance on certain materials such as semiconductors or other electronic devices. By adjusting the amount added during this step based upon specific material properties like crystal structure, surface roughness, etcetera, we aim to achieve better results with these types of layers.

Problems solved by technology

This patented technical problem addressed in this patents relates to controlling the properties during the production or use of various materials like silicons due to their unique structure and reactants involved therein. These processes require precise adjustments made throughout the entirety of the process, but they often result in variations caused by changes in certain factors related to the composition and concentrations of different components present within the liquid phase. Therefore, achieving consistently uniform etchant behavior while minimizing deviating variables remains challenging.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatus and method for controlling silicon nitride etching tank
  • Apparatus and method for controlling silicon nitride etching tank
  • Apparatus and method for controlling silicon nitride etching tank

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013]The invention provides an apparatus and method for controlling silicon nitride etch rates, silicon oxide etch rates and silicon nitride:silicon oxide etch selectivity in a phosphoric acid etching bath by measuring and controlling the silicon concentration in the etching bath. The apparatus and method measure silicon concentration before silica precipitates from the bath. When silicon nitride is etched in a hot phosphoric acid bath, silicon from the silicon nitride is liberated and complexes with oxygen and hydroxyl groups and when the concentration becomes too high as additional silicon nitride is etched, a silicon dioxide (silica, SiO2) precipitate is formed according to the chemical reaction shown above. Responsive to the measured silicon concentration, the method and apparatus compare the measured silicon concentration to a desired silicon concentration and determine if phosphoric acid spiking is needed. Spiking is the addition of fresh, pure phosphoric acid to the bath. The a

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Temperatureaaaaaaaaaa
Temperatureaaaaaaaaaa
Temperatureaaaaaaaaaa
Login to view more

Abstract

A method and system for controlling a silicon nitride etching bath provides the etching bath including phosphoric acid heated to an elevated temperature. The concentration of silicon in the phosphoric acid is controlled to maintain a desired level associated with a desired silicon nitride/silicon oxide etch selectivity. Silicon concentration is measured while the silicon remains in soluble form and prior to silica precipitation. Responsive to the measuring, fresh heated phosphoric acid is added to the etching bath when necessary to maintain the desired concentration and silicon nitride:silicon oxide etch selectivity and prevent silica precipitation. The addition of fresh heated phosphoric acid enables the etching bath to remain at a steady state temperature. Atomic absorption spectroscopy may be used to monitor the silicon concentration which may be obtained by diluting a sample of phosphoric acid with cold deionized water and measuring before silica precipitation occurs.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Owner TAIWAN SEMICON MFG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap