Vertical power mosfet and methods of forming the same

[0027] The making and using of embodiments of the invention are discussed in detail below. It should be appreciated, however, that the present embodiments provide many applicable inventive concepts that can be implemented in a wide variety of specific contexts. The specific embodiments discussed are illustrative only, and do not limit the scope of the invention.

[0028] Vertical power metal oxide semiconductor field effect transistors (MOSFETs) and methods of forming the same are provided according to various exemplary embodiments. Intermediate stages in forming a vertical power MOSFET are shown. Variations of the embodiments are discussed. Like reference numerals are used to identify like elements throughout the various drawings and throughout the illustrative embodiments.

[0029] Figure 1A to Figure 1F is a cross-sectional view of an intermediate stage in the formation of an n-type vertical power MOSFET. refer to Figure 1A , providing a semiconductor region 20 that ...