21 results about "MOSFET" patented technology

A MOSFET device and a method of fabricating a MOSFET device having low-K dielectric oxide gate sidewall spacers produced by fluorine implantation. The present invention implants fluorine into the gate oxide sidewall spacers which is used to alter the properties of advanced composite gate dielectrics e.g. nitridized oxides, NO, and gate sidewall dielectrics, such that the low-K properties of fluorine are used to develop low parasitic capacitance MOSFETs.

The semiconductor device has a first external electrode having an outer peripheral section, which has a circular shape in top plan view and which is to be attached to an alternator. On the first external electrode there mounted: a MOSFET chip; a control circuitry to which voltages at or a current flowing between a first main terminal and a second main terminal of the MOSFET chip is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate of the MOSFET chip; and a capacitor for providing a power supply to the control circuitry. The semiconductor device further has a second external electrode disposed opposite to the first external electrode with respect to the MOSFET chip. An electrical connection is made between the first main terminal of the MOSFET chip and the first external electrode, and between the second main terminal of the MOSFET chip and the second external electrode.

A resonant gate drive circuit provides efficient switching of, for example, MOSFETs. However, the operation of resonant gate drive circuits often does not allow applications where high switching frequencies are required. According to the invention, a precharging of the inductance of the resonant gate drive circuit is performed. This allows highly efficient and fast MOSFET operation.

A semiconductor device according to the present invention having a vertical MOSFET that includes a first trench that is formed in a semiconductor substrate and includes a gate electrode of the vertical MOSFET embedded therein with a gate insulating film interposed therebetween, a second trench that is connected with the first trench and has a trench width wider than the first trench, a gate pad that is connected with the gate electrode and formed to a sidewall of the second trench with the gate insulating film interposed therebetween, and a gate line that is connected with a sidewall of the gate pad and electrically connects with the gate electrode via the gate pad.

The invention discloses a separately excited DC machine controller of an electric automobile. The separately excited DC machine controller comprises a heating panel and a shell, wherein an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) power amplifier board is arranged on the surface of the heating panel; a control circuit board is installed above the power amplifier board and is fixed on the shell, a driving circuit board is also arranged on the heating panel, a DC bus supporting capacitor, a relay, a junction busbar and a pre-electrification resistor are welded on the driving circuit board, and the MOSFET power amplifier board, the DC bus supporting capacitor and the relay are electrically connected through the junction busbar to form a high voltage circuit of the machine controller; an armature current Hall sensor is fixedly arranged on the driving circuit board; a binding post is arranged on the upper end of the shell, and a cable connector assembly used for connecting a whole vehicle signal wiring harness is also fixedly arranged on the shell. The separately excited DC machine controller is reasonable in internal structure layout, small in volume, light in weight, good in electromagnetic compatibility and capable of fully meeting the development requirements of light weight and high integration degree of electric automobiles on parts and components.

The invention discloses a GaN compatible driving circuit, and belongs to the technical field of semiconductor devices, the GaN compatible driving circuit comprises a driving chip IC, an MOS driving module and a GaN driving compatible module, the driving end of the driving chip IC is connected with the input end of the MOS driving module, the GaN driving compatible module comprises a voltage limiting unit, an acceleration unit and a voltage dividing unit, the input end of the voltage limiting unit is connected with the output end of the MOS driving module, the output end of the voltage limiting unit is connected with the input end of the voltage dividing unit and the grid electrode of the N-type field effect transistor, the output end of the voltage dividing unit is connected with the source electrode of the N-type field effect transistor and the driving chip IC, and the acceleration unit is connected with the voltage limiting unit in parallel. The method has the effect that the GaN and the silicon-based MOSFET can be driven in a compatible mode.

The invention relates to a control circuit which serves for security-critical control of a consumer with an inductive load portion, to be connected to a direct voltage source, and a method for failure control. It is in this case assumed that the control circuit has a power driving assembly, a free-wheeling assembly and a reverse-connection protected assembly. In order to increase the probability of failure recognition, this control circuit is extended by a method for failure control. For this purpose the semiconductor switches of the assemblies, each formed by a MOSFET, are individually driven. The different switching statuses are checked by a diagnostic device which processes voltage values to be read out at outputs of the control circuit. In this way failure-free functionality and also possible causes of failure in the control circuit can be diagnosed.

The invention discloses a method for monitoring fluctuation of a MOSFET gate line end cutting process. The method comprises the steps: 1, manufacturing a front-layer gate overlay pattern, and enablingthe gate overlay pattern to be arranged at the periphery of a whole overlay mark; 2, manufacturing a current gate line end cutting layer overlay pattern which is arranged on the inner side of the whole overlay mark; and 3, measuring an overlay precision value and a characteristic size value, and respectively correcting the overlay deviation of the gate cutting layer and the inner distribution ofan exposure energy sheet. The method can improve the feedback speed of the exposure condition, improves the efficiency, and reduces the cost.

The invention relates to an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device for reducing the electric field intensity of an oxide layer and a preparation method thereof. The method comprises the following steps: selecting an N-type substrate layer; forming a first N-type epitaxial layer on the N-type substrate layer; forming a P + buried layer region on the inner surface of the first N-type epitaxial layer; forming a second N-type epitaxial layer on the first N-type epitaxial layer; forming two P well injection regions on the inner surfaces of the two ends of the second N-type epitaxial layer; forming an N + injection region on the inner surface of the P well injection region; forming a P + injection region on the inner surface of the P well injection region, and forming a P + field modulation region on the inner surface of the second N-type epitaxial layer; forming a gate oxide layer on the second N-type epitaxial layer, a part of the P well injection region and a part of the N + injection region; forming a source electrode on the P + injection region and a part of the N + injection region; forming a drain electrode on the lower surface of the N-type substrate layer; and forming a gate on the gate oxide layer. According to the invention, the P + field modulation region can reduce the peak electric field in the gate oxide layer and introduce the peak electric field into the SiC body, so that the surface breakdown phenomenon is avoided.

The invention relates to an output switch circuit of a vehicle-mounted 12V lithium battery, a power supply system and an automobile. The output switch circuit comprises an output switch channel and a control circuit, wherein the output switch channel comprises a first output switch channel and a second output switch channel connected in parallel with the first output switch channel, the first output switch channel and the second output switch channel are connected in parallel, the first output switch channel comprises a normally-open relay, the normally-open relay is driven by a G high-side MOSFET and controls the normally-open relay to be switched on or switched off, the second output switch channel comprises a first PMOS transistor and a second PMOS transistor connected with the first PMOS transistor in a back-to-back mode, the first output switch channel is switched on under the condition that the whole vehicle is in a wake-up state, and under the condition that the whole vehicle is in a dormant state, the first output switch channel is switched off and the second output switch channel is switched on; and the control circuit comprises an MCU module, a first current acquisition module and a second current acquisition module.

The invention is suitable for the technical field of switching power supplies, and particularly relates to an alternating current-direct current conversion circuit and a power conversion device. The alternating current-direct current conversion circuit comprises a transformer, a primary side conversion circuit and a secondary side synchronous rectification circuit, and the primary side conversion circuit comprises a primary side switching tube, a primary side driving circuit, a starting control circuit and a voltage detection output circuit; pre-driving is carried out when a primary side is started, namely, a PWM control signal with a small duty ratio is output to control a primary side switching tube to be switched on and switched off, so that an MOSFET of a secondary side synchronous rectification circuit is ensured to control a primary side control circuit to control a primary side driving circuit to work again after the follow current of a parasitic body diode is attenuated to zero; therefore, the problem that the stress of the secondary side MOSFET is too high due to the reverse recovery current of the diode of the secondary side MOSFET is solved, and the driving reliability is improved.

Low-power, dual sensitivity thin oxide FG-MOSFET sensors in RF-CMOS technology for a wireless X-ray dosimeter chip, methods for radiation measurement and for charging and discharging the sensors are described. The FG-MOSFET sensor from a 0.13 μm (RF-CMOS process, includes a thin oxide layer having a device region, a source and a drain associated with the device well region, separated by a channel region, a floating gate extending over the channel region, and a floating gate extension extending over the thin oxide layer adjacent to the device well region. In a matched sensor pair for dual sensitivity radiation measurement, the floating gate and the floating gate extension of a FG-MOSFET higher sensitivity sensor are without a salicide layer or a silicide layer formed thereon and the floating gate and the floating gate extension of a FG-MOSFET lower sensitivity sensor have a salicide layer or a silicide layer formed thereon.

The invention discloses a resonance current suppression method based on synchronous detection of a current average value and an instantaneous value. A synchronous detection circuit is adopted to directly control an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor); the synchronous detection circuit comprises a current zero crossing point detection module ZCD, a current average value detection module ACD, a signal detection module, a PWM module and a driver module. A current zero crossing point detection module ZCD is adopted to detect an inductive current instantaneous value, and a current average value detection module ACD is adopted to detect an inductive current average value; when the signal detection module receives the inductive current zero-crossing signal and the inductive current average value allowing signal at the same time, a turn-on allowing signal is sent to the PWM module; the PWM module controls the driver module to send out a driving signal, the MOSFET is turned on, and the influence of the resonance current on the input current is reduced by controlling the intermittent resonance time of the MOSFET; according to the invention, the parameter problem of the circuit does not need to be considered, the device type selection of the circuit is more flexible, the problem of input current distortion caused by resonance is fundamentally solved, and the power factor is improved.

A switch mode power amplifier includes a transistor responsive to input signals above 1.0 GHz and which includes one terminal coupled to ground and another terminal conductively coupled to a power source. A resonant circuit coupled the second terminal to an output with a resistive load coupled across the output and ground. When the transistor is turned on the second terminal is coupled to ground and when the transistor is turned off, current from the power supply to the second terminal is steered into internal capacitance of the transistor and causes voltage on the second terminal to rise to a maximum value and then decrease, the voltage at the second terminal being coupled to the output terminal through the resonant circuit. In preferred embodiments, the transistor comprises a compound semiconductor field effect transistor with the first terminal being a source terminal and the second terminal being a drain terminal. The field effect transistor is preferably a compound high electron mobility transistor (HEMT) or compound MESFET, but in other embodiments the transistor can be the compound LDMOS, compound bipolar transistor, or compound MOSFET.

The invention discloses a fan control method. The fan control method comprises the following steps that the real-time current of a fan is detected; responding to the condition that the real-time current of the fan meets a preset condition in a first preset time period and does not exceed an overcurrent protection threshold value, generating fan first control information and sending the fan first control information to a fan controller; the fan controller controls the fan to stop rotating for a second preset time based on the first control signal; and responding to the second control information received by the fan controller, and restarting the fan. The invention further discloses a system, computer equipment and a readable storage medium. According to the scheme provided by the invention, the technical purposes of preventing the fan from being burnt when the fan is out of control and preventing relevant protection circuits of the MOSFET and the FUSE can be achieved, and fan fault isolation and fan fault self-repair can be automatically achieved without manual maintenance.

The invention discloses a switching power supply control system of multiple voltage levels, and relates to electronic technology. The system comprises a first level voltage adjusting module, a second level voltage adjusting module, a low-voltage control module and a high-voltage control module, wherein the first level voltage adjusting module comprises a feedback circuit consisting of a depletionmetal oxide semiconductor field effect transistor (MOSFET) device and an operational amplifier, and the source of the depletion MOSFET device is the output end of the first level voltage adjusting module; and a level conversion circuit is connected in series between the low-voltage control module and the high-voltage control module, and the level conversion circuit is also connected with the output end of the first level voltage adjusting module and the output end of the second level voltage adjusting module. The system can provide higher driving voltage at the same time of ensuring the control precision and broaden the model selection range of an external power device.