Single crystal pulling device, preparation method of single crystal silicon and single crystal silicon

Embodiments of the present invention provide a single crystal pulling device, a preparation method of single crystal silicon, and the single crystal silicon. The single crystal pulling device includesa housing, a melting member and a blocking member; the housing is provided with a receiving space, the receiving space includes at least a first chamber and a second chamber communicating with the first chamber, and the second chamber is located above the first chamber; the melting member is used for heating and melting polysilicon, and the melting member is fixed to the bottom of the first chamber; and the blocking member is located in the second chamber, and the blocking member is used for injecting an inert gas in a preset manner to prevent impurities generated by the polysilicon melting process from entering the upper chamber of the second chamber. With the single crystal pulling device disclosed by the embodiments of the invention, a large amount of impurities can be prevented from flowing into the upper chamber of the single crystal pulling device, thereby reducing the dislocation problem of a single crystal silicon rod caused by impurities, improving the crystal quality, and also facilitating the cleaning work of the receiving space.