46results about "Single crystal growth details" patented technology

A method for growing a crystal of an Al-containing III-V group compound semiconductor by the conventional HVPE method, characterized in that it comprises a step of reacting Al with hydrogen halide at a temperature of 700° C. or lower to form a halide of Al. The method has allowed the suppression of the formation of aluminum chloride (AlCl) or aluminum bromide (AlBr) reacting violently with quartz, which is the material of a reaction vessel for the growth, resulting in the achievement of the vapor phase growth of an Al-containing III-V group compound semiconductor at a rate of 100 microns/hr or more, which has lead to the mass-production of a substrate and a semiconductor element having satisfactory resistance to adverse environment.

The present invention relates to an apparatus and method for growing a high melting point single crystal having a predetermined orientation, which is grown from a culture rod (3) by a floating zone method or a suspension zone method. The device comprises: culture rods (3) and crystal nuclei (4), a strip-shaped resistance heating type heating strip (6) provided with at least one opening is installed between its ends and next to it, and it is heated To the crystal melting temperature, so as to form the melting zone (5), drive mechanism (8, 11), so that relative movement occurs between the heating belt (6) and the crystal nucleus (4) and the culture rod (3) that are installed next to the heating belt , the molten liquid material of the culture rod (3) is obtained through each opening of the heating belt, and causes single crystal growth on the crystal nucleus (4) by cooling, and another heating device (15, 16), which is arranged at the melting The vicinity of the zone (5) in order to set the temperature gradient within the range of the melting zone (5). In order to reduce the temperature gradient in the melting zone, said further heating device (15, 16) comprises at least one heating coil (17, 19), which is driven with radio frequency, wherein the heating strip (6) and the respective heating coil are thus mounted opposite each other (17, 19) so that radio frequency radiation is coupled on the heating strip in order to generate an additional inductive heat input in the heating strip and to set a temperature gradient across the melting zone (5). This enables an inductive heat input into the heating strip, which can be varied or varied in a targeted manner.

The invention provides a method of forming a dense, shaped article, such as a crucible, formed of a refractory material, the method comprising the steps of placing a refractory material having a melting point of at least about 2900° C. in a mold configured to form the powder into an approximation of the desired shape. The mold containing the powder is treated at a temperature and pressure sufficient to form a shape-sustaining molded powder that conforms to the shape of the mold, wherein the treating step involves sintering or isostatic pressing. The shape-sustaining molded powder can be machined into the final desired shap and then sintered at a temperature and for a time sufficient to produce a dense, shaped article having a density of greater than about 90% and very low open porosity. Preferred refractory materials include tantalum carbide and niobium carbide.

The invention discloses a novel single-crystal furnace for a zinc cadmium telluride single crystal and a growth process. A furnace body and a heating power supply are provided; a quartz tube is arranged in the hearth; a crucible is arranged in the quartz tube; a seed crystal cavity is form on a lower part in the crucible; a support frame is arranged below the quartz tube; sealing plugs are arranged at an upper end and a lower end of the hearth; nine heating areas are arranged in the hearth of the furnace body from top to bottom in sequence; each heating area is provided with an electrode which communicates with a power supply cabinet, a cable and a self-control switch; a temperature control system is provided further. The novel single-crystal furnace has the advantages of suitability for growth of the zinc cadmium telluride single crystal, omission of mechanical movement, formation of a no-vibration growth environment, realization of segmental flexible control of the growth temperature, great reduction in time for heating and smelting materials and receiving the seed crystal, and improvement on the quality and production efficiency of the single crystal. Moreover, the novel single-crystal furnace has the advantages of compact entire structure, small floor area, lower equipment cost, easiness in mounting, programmed control, accurate running, and stable repeatability. By adopting the novel single-crystal furnace, a large-diameter zinc cadmium telluride single crystal can be generated rapidly.

A silicon single crystal is produced by the CZ process by setting a hydrogen partial pressure in an inert atmosphere within a growing apparatus to 40 Pa or more but 400 Pa or less, and by growing a trunk part of the single crystal as a defect-free area free from the Grown-in defects. Therefore, a wafer the whole surface of which is composed of the defect-free area free from the Grown-in defects and which can sufficiently and uniformly form BMD can be easily produced. Such a wafer can be extensively used, since it can significantly reduce generation of characteristic defectives of integrated circuits to be formed thereon and contribute for improving the production yield as a substrate responding to the demand for further miniaturization and higher density of the circuits.

The invention discloses a seeding mold for growing silicon crystals by using an orientated solidification method and a crystal growing method. The seeding mold is arranged at the internal bottom of a quartz crucible and comprises a seed crystal container and a sealing liquid container, wherein the sealing liquid container consists of cavities connected to the periphery of the seed crystal container and is used for accommodating a sealing substance; and the seed crystal container is provided with a first cavity for accommodating seed crystals. A method for growing monocrystalline silicon/similar monocrystalline silicon by adopting the seeding mold comprises the following steps of: arranging or setting the seeding mold at the bottom of the quartz crucible; arranging the sealing substance and the seed crystals in the sealing liquid container and the seed crystal container respectively; putting a silicon raw material into the quartz crucible; and growing monocrystals/similar monocrystals by adopting orientated solidification. By adopting the seeding mold and the crystal growing method, the problem of placement of the seed crystals can be solved without changing the structures of the conventional orientated solidification and quartz crucible, dislocation of the seed crystals in the seeding process is eliminated, and the spontaneous nucleation phenomenon of melt from the bottom wallface of the crucible is avoided. The seeding mold has low cost and is easy to process.

A method utilising microwave plasma chemical vapour deposition (MPCVD) process of producing electronic device grade single crystal diamond comprising of: (a) selecting a diamond seed or substrate having a pre-determined orientation, (b) cleaning and/or etching of non-diamond phases and other induced surface damages from the diamond seed or substrate, whereby this step can be performed one or more times, (c) growing a layer of extremely low crystal defect density diamond surface on the cleaned/etched diamond seed or substrate, whereby this step can be performed one or more times, and (d) growing electronics device grade single crystal diamond on top of the layer of the low crystal defect density diamond surface.

The inorganic scintillator of the invention is an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising a metal oxide containing Lu, Gd, Ce and Si and belonging to space group C2/c monoclinic crystals, and which satisfies the condition specified by the following inequality (1A), wherein A_Lu represents the number of Lu atoms in the crystal and A_Gd represents the number of Gd atoms in the crystal.

{A_Lu/(A_Lu+A_Gd)}<0.50  (1A)

A low temperature poly-silicon thin film element, method of making poly-silicon thin film by direct deposition at low temperature, and the inductively-coupled plasma chemical vapor deposition equipment utilized, wherein the poly-silicon material is induced to crystallize into a poly-silicon thin film at low temperature by means of high density plasma and substrate bias voltage. Furthermore, the atom structure of the poly-silicon thin film is aligned in regular arrangement by making use of the induction layer having optimal orientation and lattice constant close to that of the silicon, thus raising the crystallization quality of the poly-silicon thin film and reducing the thickness of the incubation layer.

The invention relates to a preparation method of perovskite structure lead titanate single crystal nanoparticles. The method adopts hydrothermal reaction and subsequent high-temperature calcination, a mixed precipitate of titanium and lead ions introduces reactant material of hydrothermal reaction, a potassium hydroxide mineralizer promotes partial crystallization of a product to form precursor powder, then the precursor powder is completely crystallized in a subsequent high-temperature calcination process, therefore, synthesis of perovskite structure lead titanate single crystal nanoparticles is realized. The method provided by the invention has characteristics of simple process, easy control, no pollution and low cost, and is easy for large-scale production. The prepared perovskite structure lead titanate single crystal nanoparticles have high purity, good dispersity, and uniform size.

The invention relates to the field of monocrystalline silicon growth furnaces and aims at providing a mounting plate assembly for a monocrystalline silicon growth furnace. The mounting plate assembly for the monocrystalline silicon growth furnace comprises a connector bolt, a mounting plate and switch assemblies, wherein the switch assemblies comprise a switch assembly A and a switch assembly B; the switch assembly A is used for controlling a secondary furnace chamber and a furnace lid of the monocrystalline silicon growth furnace to move or not; the switch assembly B is used for controlling the secondary furnace chamber to move independently or move together with the furnace lid; by matching of the connector bolt and the mounting plate, the secondary furnace chamber and the furnace lid of the monocrystalline silicon growth furnace can be connected or disconnected. The mounting plate assembly can be used for conveniently and safely taking monocrystalline silicon at any time in the middle, the monocrystalline silicon can be taken out without waiting for the monocrystalline silicon is slowly cooled in the furnace body, and thus, the material cooling time and the residual material reheating time can be saved, the production cost can be lowered, and the production efficiency can be improved.

The invention discloses an etching solution suitable for dislocation display of a crystal orientation [100] monocrystal germanium wafer deflecting to the crystal orientation [111] as well as an etching method. The method comprises steps as follows: preparing the etching solution; placing the prepared etching solution in a thermostat water bath for heating; cleaning the surface of the monocrystal germanium wafer; soaking the monocrystal germanium wafer in the etching solution for etching for 5 min; performing leaching and blow-drying on the etched monocrystal germanium wafer; observing the morphology after etching under a metallographic microscope finally. With the adoption of the etching method, a dislocation pit can be effectively etched out, the etching rate is moderate, the reaction process is mild and controllable, the etching method is simple and feasible when used for detecting the dislocation density of the crystal orientation [100] monocrystal germanium wafer deflecting to the crystal orientation [111], and the appearing probability of interference patterns such as water ripples and the like is low.

The invention provides a feeding device for a single crystal furnace, the feeding device comprises a base and a feeder main body mounted on the base, the feeder main body comprises a feeding mechanism, and the feeding mechanism comprises an upper plate in sliding connection with the base; the vibrator feeding mechanism comprises a second driving assembly, a feeding assembly connected to the upper plate in a sliding mode, a synchronous belt wheel connected with the second driving assembly, a tension sensor and an alarm electrically connected with the tension sensor, a synchronous belt is installed on the synchronous belt wheel, and the feeding assembly is connected to the upper plate in a sliding mode. The synchronous belt is connected with the feeding assembly through the tension sensor, and if the synchronous belt and the feeding assembly do not move synchronously, the alarm gives out an alarm signal. According to the device, the occupied space of the whole machine can be effectively reduced, and serious consequences caused by collision can be avoided.

Embodiments of the present invention provide a single crystal pulling device, a preparation method of single crystal silicon, and the single crystal silicon. The single crystal pulling device includesa housing, a melting member and a blocking member; the housing is provided with a receiving space, the receiving space includes at least a first chamber and a second chamber communicating with the first chamber, and the second chamber is located above the first chamber; the melting member is used for heating and melting polysilicon, and the melting member is fixed to the bottom of the first chamber; and the blocking member is located in the second chamber, and the blocking member is used for injecting an inert gas in a preset manner to prevent impurities generated by the polysilicon melting process from entering the upper chamber of the second chamber. With the single crystal pulling device disclosed by the embodiments of the invention, a large amount of impurities can be prevented from flowing into the upper chamber of the single crystal pulling device, thereby reducing the dislocation problem of a single crystal silicon rod caused by impurities, improving the crystal quality, and also facilitating the cleaning work of the receiving space.

The invention discloses a crystal material. The chemical formula is Mg11(HPO3)8(OH)6, the reflectivity in an ultraviolet-visible-near infrared band of 0.2-2.5 microns is 88% or above, and simultaneously the emissivity in a far infrared band of 2.5-25 microns is 0.90 or above. The invention also discloses a preparation method of the crystal material. The preparation method comprises the following steps: on the basis of raw materials of magnesium acetate tetrahydrate and phosphorous acid, simultaneously adding a cyclohexylamine template agent, and preparing the Mg11(HPO3)8(OH)6 crystal powder bya hydrothermal synthesis method. According to the crystal material provided by the invention, comprehensive performance of reflection and radiation can be well combined, the actual cooling effect is2-10 DEG C better than the common heat reflecting material titanium dioxide in the market, and the crystal material can be well applied to the field of heat reflection infrared radiation.

The present application provides a draft tube of crystal growing furnace and the crystal growing furnace. The draft tube comprises an inner tube, an outer tube and a thermal insulating material sandwiched between the inner tube and the outer tube, wherein the inner tube has a thermal resistance lower than that of the outer tube. Accordingly, the outer tube having the higher thermal resistance reduces the heat transfer from the outer tube to the inner tube, thereby the temperature of the inner tube can be reduced, the heat radiation from the ingot surface to the inner tube can be enhanced, and the vertical temperature gradient of the ingot can be increased. At the same time, the temperature of the outer tube increases to reduce the condensation of silica vapor (SiOx) evaporated from the silicon melt surface, thereby impurity formation and dislocation defect caused by the SiOx fallen into the silicon melt can be prevented.

This invention relates to the Sb2Te3 single-crystal nanometer line ordered array and its making method, the character is that the solutin is composed of the following componets: the citric acid coordination Sb3+; 4í†1 by Moore chroma,, nitrate dissolution Te power, 2í†3 by the SbO+í†HTeO2+ Moore chroma, wherein the pH of the plating liquid is 1-3, it uses the porous alumina templetits in the plating liquid as its working electrode and the black lead as its assistant electrode, its current density is controlled between 0.2mA/cm2 and 0.5mA/cm2, plating 0.5-2h can obtain the Sb2Te3 compound single-crystal nanometer line which grows in the 110 direction; and its single-crystal with hexagonal crystal series structure grows in the 110 direction, wherein the crystal cell parameter as follows:aú¢bú¢0.426nmíócú¢3.05nm. this invention fistly is under the condition of room-temperature and open system, and it uses electrochemical sediment principle to make the Sb2Te3 single-crystal nanometer line ordered array; the device in this invention is simple, which is easy to operate, and it fits for industry production.

The invention discloses a preparation method of a tungsten disulfide single crystal with a controllable layer number. According to the preparation method, hydrogen sulfide is taken as a sulfur source,and micro-patterning on a precursor WO3 is carried out in advance to accurately regulate and control the amount of the precursor, thereby realizing controllable preparation of single-layer, double-layer, three-layer and multi-layer WS2 single crystals. The method provided by the invention has the advantages of few required raw materials, high yield and good repeatability, and the obtained crystalhas high quality and high electron mobility, and is especially suitable for preparation of large-area uniformly-distributed WS2 single crystals with controllable layer number.

The invention related to a preparation method of a silicon carbide microcrystalline homogenized in dimension and shaped in a polyhedron form. The preparation method comprises the following steps of: putting the SiC raw material in a crucible, fastening a microcrystalline depositing collector at the inner side of a crucible cover, screwing the crucible and then putting the crucible in a crystal growth furnace; vacuumizing the crystal growth system until the vacuum degree is less than 5*10<-3>Pa, and then filling an atmosphere gas of 1-20000Pa; increasing the temperature of the crystal growth system so that the temperature of the raw material zone is in the range from 1800 to 2200 DEG C, keeping the temperature of the microcrystalline depositing collector at the crucible cover in the range from 1750 to 2100 DEG C, and starting microcrystalline growing; and after the microcrystalline grows for 0.5-2 hours, turning off the power of the crystal growth furnace. The preparation method provided by the invention is not involved with any other precursor and catalyst; besides, the raw material zone is separated from the deposition growth zone; the obtained SiC microcrystalline dimension is adjustable in the range from 10 to 50 microns; the microcrystalline obtained is separated from each other and shaped in the polyhedron form; the microcrystalline growth period is short, and the microcrystalline growth method is simple and easy to popularize; therefore, the preparation method of the silicon carbide microcrystalline homogenized in dimension and shaped in the polyhedron form is suitable for large-scale industrial production and has high practicable value.

The invention belongs to the technical field of ultra-pure material preparation, and particularly relates to a multifunctional electron beam zone melting furnace. The multifunctional electron beam zone melting furnace comprises an upper feeding and clamping mechanism 1, a furnace body 2, an electronic gun 3, a vacuum system 4, a rack 5, an electronic gun moving mechanism 6, a lower feeding and clamping mechanism 7, an observation window 8, a control box 9, a high-voltage power supply, an automatic control system and a water cooling system; and the end portion, extending into the furnace body 2, of the upper feeding and clamping mechanism 1 is an upper clamping head, and a to-be-melted bar is clamped at the upper clamping head. The function of synchronous coordinated movement of the gun body and the feeding and clamping mechanism can be achieved, diversification of smelting materials can be achieved, the structure is compact, the requirement for smelting of bars with the diameter of 50mm can be met, the layout is reasonable, and maintenance is convenient.

A method for accelerating protein crystallization on a substrate is provided, including the steps of providing a coating layer comprising a colloidal solution containing inert particles on at least one discrete testing portion of a testing substrate to provide at least one coated portion, and drying the coated portion so that the coated portion has an enhanced surface topography defined by the characteristics of the coating layer. A supersaturated protein solution is applied to the coated portion, and the testing substrate is placed in an incubator for crystallization, and the growth rate of the protein crystals is accelerated during incubation due to the enhanced surface topography of the at least one coated portion. The testing substrate is evaluated to determine the degree of protein crystallization until crystallization in complete, and the protein crystals are subsequently removed from the testing substrate subjected to specific characterization testing.

The invention relates to a preparation method of lithium niobate single crystal. The method comprises the following steps: (a) mixing niobium oxides and lithium carbonate according to the mass ratio of 79.1-79.2:20.8-20.9, and pressing the mixture to be blocky mixture after adding water; (b) adding the blocky mixture into a first heating furnace, heating the heating furnace from the room temperature to 1150 DEG C at the speed of 8-10 DEG C/min, and maintaining the temperature for 1.5-2 hours to obtain the initial product; and (c) adding the initial product into a crucible placing in a second heating furnace, adjusting the seed crystal rod to make the seed rod be concentric with the crucible, heating the initial product to melt the initial product, cooling the product to 1330-1350 DEG C, adjusting the rotating speed of the seed crystal rod to 8-15 rpm, declining the seed crystal in the lower end of the seed crystal rod to the meltwater to inoculate the crystal, and lifting upward the product at the speed of 4-6 mm/h to perform growth when the diameter of the seed crystal is expanded to 20-30 mm. The near-stoichiometric lithium niobate crystal with high purity and uniform component can be prepared by means of controlling accurately the conditions such as raw material proportion, technology step, and heating mode.

The invention discloses a graphite disc turnover type GaN single crystal substrate laser pre-stripping integrated cavity. A heat preservation tray containing a phase change material is adopted to achieve heat preservation of a graphite disc, the temperature of the heat preservation tray can be kept at 700 DEG C or above within a certain period of time, the probability of growth quality problems caused by sudden temperature change or too low temperature of a GaN single crystal substrate slice is remarkably reduced, and the growth quality of GaN single crystals is improved; the integrated chamber is connected with the HVPE equipment, a certain vacuum degree or inert gas filling can be achieved in the chamber, the heating and heat preservation functions are achieved, the environment atmosphere of the GaN single crystal substrate slice in the whole transfer process can be guaranteed, and the growth quality of the GaN single crystal substrate in the subsequent process is guaranteed; the transfer tray with the heat preservation function is adopted to transfer the GaN single crystal substrate slices in the heat preservation tray in the integrated cavity in a full-disc mode, the sapphire substrate faces of all the GaN single crystal wafers face upwards, and therefore the Bernoulli adsorption transmission mode can be canceled, and the laser pre-stripping efficiency of the GaN single crystal substrate slices can be remarkably improved.

The present invention provides methods for preparing trimanganese tetroxide with low BET specific surface area and methods for controlling particle size of trimanganese tetroxide and trimanganese tetroxide product.