Etching solution for dislocation display of monocrystal germanium wafer deflecting to crystal orientation [111] and etching method

[0041] Embodiment 1 The preparation of [100] partial [111] germanium single wafer dislocation display with etching solution

[0042] The germanium single crystal dislocation etching solution is prepared from analytically pure chemical reagents and powder chemical reagents, plus deionized water. The operation is carried out on a laboratory bench with a fume hood, and an electronic balance is used to weigh analytically pure anhydrous Cu. (NO 3 ) 2 Powder 10g, measure 130ml analytical pure 40% concentration HF aqueous solution and 20ml analytical pure 65% concentration HNO with measuring cylinder 3 aqueous solution. The measured HF aqueous solution and HNO 3 Pour the aqueous solution into a polytetrafluoroethylene beaker with a volume of 1L, add deionized water to the mark of 0.5L, and stir evenly with a glass rod.

[0043] Embodiment 2 The etching method carried out by using the etching solution prepared in Embodiment 1

[0044] Place the polytetrafluoroethylene beaker filled with the corrosive solution prepared in Example 1 in a constant temperature water bath, set the temperature of the constant temperature water bath to 30°C, and keep the corrosive solution within the temperature range of 30±1°C.

[0045] Take a rectangular single wafer with a length of 4 cm and a width of 3 cm cut from a germanium single wafer of 4 inches [100] biased to [111] 9°, clamp it into a beaker with tweezers, and soak the germanium wafer in deionized water , and then use tweezers to insert the germanium sheet into the polytetrafluoroethylene flower basket carrier, and immerse the polytetrafluoroethylene flower basket inserted with the germanium sheet into a polytetrafluoroethylene beaker filled with 40% concentration and analytically pure HF aqueous solution. The germanium single wafer is decontaminated on the s