A method for improving the epitaxial growth rate of
silicon comprises the following steps: heating a reaction cavity base; introducing gaseous
trichlorosilane carried by
hydrogen as a growth
raw material; removing reaction byproducts by using
hydrogen; mounting a
silicon substrate slice on the reaction cavity base, and heating the base; removing various impurities volatilized from the
silicon substrate slice and the base by using
hydrogen; taking gaseous
trichlorosilane carried by hydrogen as a growth
raw material, and growing a silicon epitaxial layer on the surface of the silicon substrate slice; removing the reaction byproducts in the growth process out of the reaction cavity by using hydrogen; and taking out after the temperature of the silicon epitaxial
wafer is reached. The production efficiency of the silicon epitaxial
wafer with the thickness of 150-200 mm is greatly improved, the
process time and the maintenance cost are remarkably reduced, the process is simple, the
operability is high, and the method is a large-scale industrial production technology suitable for the extremely-thick silicon epitaxial
wafer with the silicon epitaxial
layer thickness higher than 150 [mu]m and can be applied to the field of high-
voltage power devices.