Method for improving epitaxial growth rate of silicon

A growth rate, silicon epitaxy technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of silicon epitaxial surface growth quality degradation, aggravation of a large amount of adhesion reaction deposits, and silicon epitaxial wafer surface quality degradation. Achieve the effects of reducing process time and maintenance costs, significant technological breakthroughs, and improving production efficiency

Active Publication Date: 2021-12-03
CHINA ELECTRONICS TECH GRP NO 46 RES INST +1
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  • Summary
  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

The methods tried include: 1) By shortening the vertical distance between the top of the reaction chamber and the base, and then shortening the boundary layer distance, the epitaxial growth should be easier, but experiments have shown that when the distance is shortened to a certain extent, a large amount of adhesion reactions will occur on the top of the reaction chamber. Deposits will cause the temperature inside the cavity to be out of control, resulting in the decline of the surface quality of the silicon epitaxial wafers and making them unable to be used for subsequent growth, which intensifies the maintenance cost of the equipment; The reaction is carried out, but experiments have proved that a large amount of reaction deposits will be aggravated on the top surface of the reaction chamber, and the pressure of the reaction chamber will also increase sharply, which will not only cause the risk of safe operation of the silicon epitaxial reaction chamber, but also improve equipment maintenance. The cost will also result in a decrease in the quality of silicon epitaxial surface growth

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] (1) Raise the temperature of the base of the reaction chamber, set the temperature to 1180°C, inject hydrogen chloride gas to etch the reaction chamber, set the flow rate of hydrogen chloride gas to 18 L / min, and set the etching time to 230 sec

[0037] (2) The gaseous trichlorosilane carried by hydrogen was introduced as the growth raw material, the flow rate of hydrogen gas was set to 95 L / min, and the flow rate of gaseous trichlorosilane was set to 14 L / min. On the base of the reaction chamber Deposit the polysilicon cladding layer, and the deposition time is set to 20 sec.

[0038] (3) Purging the reaction chamber with hydrogen gas at a flow rate of 95 L / min, the purging time is set to 30 sec, and the reaction by-products are removed from the reaction chamber, and then the temperature of the reaction chamber is lowered to 200°C;

[0039] (4) Install the silicon substrate on the base of the reaction chamber, and raise the temperature of the base to 1125°C;

[0040] (...

Embodiment 2

[0046] (1) Raise the temperature of the base of the reaction chamber, set the temperature to 1160°C, inject hydrogen chloride gas to etch the reaction chamber, set the flow rate of hydrogen chloride gas to 19 L / min, and set the etching time to 230 sec

[0047] (2) The gaseous trichlorosilane carried by hydrogen was introduced as the growth raw material, the flow rate of hydrogen gas was set to 90 L / min, and the flow rate of gaseous trichlorosilane was set to 14 L / min. On the base of the reaction chamber Deposit the polysilicon cladding layer, and the deposition time is set to 30 sec.

[0048] (3) Purging the reaction chamber with hydrogen gas at a flow rate of 95 L / min, the purging time is set to 25 sec, and the reaction by-products are removed from the reaction chamber, and then the temperature of the reaction chamber is lowered to 200°C;

[0049] (4) Install the silicon substrate on the base of the reaction chamber, and raise the temperature of the base to 1120°C;

[0050]...

Embodiment 3

[0056] (1) Raise the temperature of the base of the reaction chamber, set the temperature to 1170°C, inject hydrogen chloride gas to etch the reaction chamber, set the flow rate of hydrogen chloride gas to 20 L / min, and set the etching time to 220 sec

[0057] (2) The gaseous trichlorosilane carried by hydrogen was introduced as the growth raw material, the flow rate of hydrogen gas was set to 95 L / min, and the flow rate of gaseous trichlorosilane was set to 16 L / min. On the base of the reaction chamber Deposit the polysilicon cladding layer, and the deposition time is set to 40 sec.

[0058] (3) Purging the reaction chamber with hydrogen gas at a flow rate of 90 L / min, the purging time is set to 30 sec, and the reaction by-products are removed from the reaction chamber, and then the temperature of the reaction chamber is lowered to 200°C;

[0059] (4) Install the silicon substrate on the base of the reaction chamber, and raise the temperature of the base to 1130°C;

[0060]...

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Abstract

A method for improving the epitaxial growth rate of silicon comprises the following steps: heating a reaction cavity base; introducing gaseous trichlorosilane carried by hydrogen as a growth raw material; removing reaction byproducts by using hydrogen; mounting a silicon substrate slice on the reaction cavity base, and heating the base; removing various impurities volatilized from the silicon substrate slice and the base by using hydrogen; taking gaseous trichlorosilane carried by hydrogen as a growth raw material, and growing a silicon epitaxial layer on the surface of the silicon substrate slice; removing the reaction byproducts in the growth process out of the reaction cavity by using hydrogen; and taking out after the temperature of the silicon epitaxial wafer is reached. The production efficiency of the silicon epitaxial wafer with the thickness of 150-200 mm is greatly improved, the process time and the maintenance cost are remarkably reduced, the process is simple, the operability is high, and the method is a large-scale industrial production technology suitable for the extremely-thick silicon epitaxial wafer with the silicon epitaxial layer thickness higher than 150 [mu]m and can be applied to the field of high-voltage power devices.

Description

technical field [0001] The invention relates to the technical field of preparation of semiconductor silicon epitaxial materials, in particular to a method for increasing the growth rate of silicon epitaxial growth. Background technique [0002] Silicon epitaxial wafer is a kind of semiconductor silicon wafer, which refers to the use of CVD method to epitaxially grow one or more layers on a polished silicon single crystal substrate, and the parameters such as doping type, resistivity, thickness, and lattice structure meet specific requirements. The silicon single crystal epitaxial layer, the chemical reaction of silicon epitaxy is: SiHCL 3 +H 2 →Si+HCl, through epitaxy, can significantly reduce the original lattice defects of the silicon substrate, with lower defect density and oxygen content, and then used as a substrate for the manufacture of various semiconductor discrete devices and integrated circuit products. [0003] With the emergence of emerging technologies such a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/02C30B25/12C30B25/14C30B25/16C30B29/06H01L21/02
CPCC30B25/02C30B25/14C30B25/16C30B25/165C30B29/06C30B25/12H01L21/02381H01L21/02532H01L21/0262
Inventor 李明达居斌王楠薛兵唐发俊
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST
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