Novel single-crystal furnace for zinc cadmium telluride single crystal and growth process

A single crystal furnace, cadmium zinc telluride technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of unsatisfactory crystal quality, affecting the quality of single crystal, long growth time, etc., to achieve high utilization rate, The effect of improving stability and reducing growth temperature

Pending Publication Date: 2017-08-18
磐石创新(江苏)电子装备有限公司
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  • Abstract
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AI Technical Summary

Benefits of technology

This patented technology allows for precise control over how small silicon wafers are grown while maintaining their quality level. It achieves this through controllably increasing the size at one end (the starting point) without moving parts inside it. Additionally, there is also added features like cool down after each step before beginning another cycle instead of continuously adding new ingredients until all desired results have been achieved. Overall, these technical improvements improve efficiency, productivity, reliance on smaller components, etcetera.

Problems solved by technology

The technical problem addressed by this patented technology relates to improving the performance and purity of Cadzimuth Tellum (cadmium) selenocyanine (HoSCN), one type of chemical element discovered during quantum chemistry experiments on Earth's surface. This discovery opens up new possibilities such as creation of larger quantities of cathode ray tubes that can be easily detected or analyzed due to their unique properties like strong absorption near 1-5 micron wavelength range. Additionally, current methods require complex operations involving multiple components, leading to poorly controlled results.

Method used

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  • Novel single-crystal furnace for zinc cadmium telluride single crystal and growth process
  • Novel single-crystal furnace for zinc cadmium telluride single crystal and growth process
  • Novel single-crystal furnace for zinc cadmium telluride single crystal and growth process

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Effect test

example 1

[0044]Example 1: A new type of single crystal furnace for cadmium zinc telluride single crystal, with a furnace body 3 and a heating power supply, a quartz tube 5 inside the furnace 6, a 3-inch PBN crucible inside the quartz tube, and a bottom part of the crucible The seed crystal cavity 13 is provided with a support frame 10 below the quartz tube, and the upper and lower ends of the furnace are provided with sealing plugs 7, 8. The furnace 6 of the furnace body 3 is provided with nine heating zones from bottom to top, That is: the first area, the second area, the third area, the fourth area, the fifth area, the sixth area, the seventh area, the eighth area, and the ninth area; Electrodes 4 and cables 2; and a temperature control system is also provided, each area is provided with an automatic control switch, and is controlled and connected to the controller 11 through the signal line 12, and a temperature control couple and a temperature measurement are also provided in each area

Embodiment 2

[0071] Embodiment 2: Using the single crystal furnace in Embodiment 1, the growth process steps are as follows:

[0072] 1) Ingredients and tube sealing:

[0073] The stoichiometric ratio satisfies Cd 1-x Zn x Put 4 kg of CdZnTe polycrystalline material synthesized by Te (x = 0.1), 2000 g of Te (99.99999% high-purity raw material) and direction seed crystal into a 3-inch PBN crucible and put it into a quartz tube Vacuum until the vacuum reaches 4.5×10 -5 When Pa is sealed, use a hydrogen-oxygen torch torch.

[0074] 2) Furnace loading: vertically load the sealed quartz tube into the single crystal furnace, adjust the bottom support height so that the CdZnTe polycrystalline material in the crucible corresponds to the 4th, 5th and 6th zones of the single crystal furnace.

[0075] 3) Install galvanic couples: take the middle positions in the first, second, third, fourth, fifth, sixth, seventh, eighth, and ninth areas of the single crystal furnace Place the temperature control

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Abstract

The invention discloses a novel single-crystal furnace for a zinc cadmium telluride single crystal and a growth process. A furnace body and a heating power supply are provided; a quartz tube is arranged in the hearth; a crucible is arranged in the quartz tube; a seed crystal cavity is form on a lower part in the crucible; a support frame is arranged below the quartz tube; sealing plugs are arranged at an upper end and a lower end of the hearth; nine heating areas are arranged in the hearth of the furnace body from top to bottom in sequence; each heating area is provided with an electrode which communicates with a power supply cabinet, a cable and a self-control switch; a temperature control system is provided further. The novel single-crystal furnace has the advantages of suitability for growth of the zinc cadmium telluride single crystal, omission of mechanical movement, formation of a no-vibration growth environment, realization of segmental flexible control of the growth temperature, great reduction in time for heating and smelting materials and receiving the seed crystal, and improvement on the quality and production efficiency of the single crystal. Moreover, the novel single-crystal furnace has the advantages of compact entire structure, small floor area, lower equipment cost, easiness in mounting, programmed control, accurate running, and stable repeatability. By adopting the novel single-crystal furnace, a large-diameter zinc cadmium telluride single crystal can be generated rapidly.

Description

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Claims

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Application Information

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Owner 磐石创新(江苏)电子装备有限公司
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