Electronic device grade single crystal diamonds and method of producing the same

a technology of electronic devices and diamonds, applied in the field of single crystal diamonds of electronic devices, can solve the problems of reducing the efficiency/distance of charge collection, not only in thickness but also in charge collection distance, and the electronics properties of diamonds are believed to be affected

Active Publication Date: 2016-07-14
IIA TECH
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  • Application Information

AI Technical Summary

Benefits of technology

The technical effect of this patented technology relates to improving production of high purity semicrystalline materials used in various applications such as computer hard disk drive manufacturing. This involves controllably depositing tiny particles called graphite onto certain surfaces during processing steps like creation of very small layers that are highly resistant to damage caused by external influences. By doing these processes repeatedly with different types of nanoparticles, it becomes possible to produce pure polycrystals without any impurities added.

Problems solved by technology

This patents describes different ways to make thin layers of semiconductor materials like silicon dioxycarbon (SiO2), gallium arsenide (GaAs). By controlling factors like temperature, pressure, type of solvent, and ionization energy levels, this technology allows for precise placement of dopants within specific areas without causing unwanted particles called chirp marks. Additionally, there may exist variations between individual crystal structures formed over time caused by imperfections in the deposited film itself. To address these issues, the inventions involve optimizing the production conditions while maintaining consistently good productivity rates across all sizes of interest.

Method used

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  • Electronic device grade single crystal diamonds and method of producing the same
  • Electronic device grade single crystal diamonds and method of producing the same
  • Electronic device grade single crystal diamonds and method of producing the same

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Embodiment Construction

[0027]This application claims the benefit of, and priority to, Singapore Provisional Application No. 10201500278Y, filed Jan. 14, 2015, and Singapore Patent Application No. 10201505413V, filed Jul. 10, 2015, the contents of which are incorporated by reference herein in their entireties.

[0028]The Figures are diagrammatic and not drawn to scale. In the Figures, elements which correspond to elements already described have the same reference numerals.

[0029]According to an aspect of the present invention, there is provided a method utilising microwave plasma chemical vapour deposition (MPCVD) process to produce electronic device grade single crystal diamonds.

[0030]The first step comprises of selecting a diamond seed or substrate having a pre-determined orientation. In a preferred embodiment of the present invention, the orientation of the diamond seeds or substrate is {001}. In a preferred embodiment of the present invention, the selection of the substrate having a pre-determined orientatio

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Abstract

A method utilising microwave plasma chemical vapour deposition (MPCVD) process of producing electronic device grade single crystal diamond comprising of: (a) selecting a diamond seed or substrate having a pre-determined orientation, (b) cleaning and/or etching of non-diamond phases and other induced surface damages from the diamond seed or substrate, whereby this step can be performed one or more times, (c) growing a layer of extremely low crystal defect density diamond surface on the cleaned/etched diamond seed or substrate, whereby this step can be performed one or more times, and (d) growing electronics device grade single crystal diamond on top of the layer of the low crystal defect density diamond surface.

Description

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Claims

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Application Information

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Owner IIA TECH
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