The present invention discloses a Pt Ni Al bonding layer doped with binary trace active elements and capable of being completely oxidation resisting at 1200 DEG C and a preparation method thereof and belongs to the field of novel thermal barrier coatings and the preparation technologies. According to the invention, firstly, a Pt layer with the thickness of 5-10 microns is prepared on a
nickel base monocrystal high temperature
alloy matrix through the plating or the
electron beam
physical vapor deposition method, and then a NiAlHfZr
coating with the thickness of 20-60 microns is deposited on the Pt layer through the
electron beam
physical vapor deposition method. The Pt layer reduces the interfacial holes and effectively improves the adhesion of an oxidation film; binary
doping of Hf, Zr enables the
NiAl coating surface to be smoother and denser and enables the oxidation film generated during the
oxidation process on the
coating surface to be straighter, especially with little oxidation increase, and greatly improves the
oxidation resistance of the coating. The Pt Ni Al bonding layer is completely oxidation resisting at 1200 DEG C. The service life of the coating is prolonged to certain degree through
doping of binary elements namely Hf and Zr and Pt modification.