2 results about "Dark current" patented technology

A process for fabricating an optoelectronic device including an array of germanium-based photodiodes including the following steps: producing a stack of semiconductor layers, made from germanium; producing trenches; depositing a passivation intrinsic semiconductor layer, made from silicon; annealing, ensuring, for each photodiode, an interdiffusion of the silicon of the passivation semiconductor layer and of the germanium of a semiconductor portion, thus forming a peripheral zone of the semiconductor portion, made from silicon-germanium.

The invention relates to a two-dimensional organic-inorganic hybrid double perovskite semiconductor crystal and a preparation method and application thereof. The invention relates to an organic-inorganic hybrid double perovskite semiconductor crystal. The chemical formula of an inorganic-organic hybrid semiconductor material is (C6H5CH2NH3) 4AgBiBr8. According to the invention, the organic-inorganic hybrid double-perovskite semiconductor crystal is prepared, and the organic-inorganic hybrid double-perovskite semiconductor crystal is prepared into a planar photoconductive detector, so that high-sensitivity detection of an intrinsic absorption spectrum can be realized. Laser with the wavelength of 405 nm is used for irradiating the single crystal detector, and the photoelectric response of the single crystal detector is tested. When the power density of incident light is 50.9 mW / cm < 2 >, the crystal device shows an obvious photoconductive effect, and the ratio of light current to dark current can reach 1.8 * 10 < 3 >. The result shows that the material has potential application value when being used as a photoconductive detector.