Organoaminosilane Precursors and Methods for Depositing Films Comprising Same

a technology of organic aminosilane and precursors, applied in the field of organic aminosilane precursors, can solve problems such as handling and usage problems

Active Publication Date: 2012-05-24
VERSUM MATERIALS US LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The technical effect of this patented method compared different organosilsanines with each other's properties such as solubility or reactivity for certain chemical reactions.

Problems solved by technology

People have been exploring new materials called organosiinsulfonate(OSI). These molecules offer advantages over existing ones like monoaminophosphonic acid diimides (MNDAs)). They exhibits high reactivity with various types of surfaces due to their ability to form strong bonds between atoms without leaving any residue after being applied onto them. Additionally, they show promise applications in electronic device manufacturing technologies where thin films made up of different elements are needed.

Method used

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  • Organoaminosilane Precursors and Methods for Depositing Films Comprising Same
  • Organoaminosilane Precursors and Methods for Depositing Films Comprising Same
  • Organoaminosilane Precursors and Methods for Depositing Films Comprising Same

Examples

Experimental program
Comparison scheme
Effect test

example 1

Synthesis of Phenylmethylaminosilane Using Silyl Exchange Reaction

[0113]In a 500 ml Schlenk flask, 64.2 grams (g) (0.6 mol) N-methylaniline and 131 g (1.0 mol) di-isopropylaminosilane were stirred at ambient temperature under a nitrogen atmosphere for 24 hours. The relatively lower boiling point by-product di-isopropylamine was removed with vacuum at a pressure of 20 mmHg and room temperature (25° C.). The reaction mixture was stirred for another 24 hours. The end-product phenylmethylaminosilane (73.6 g, 89.5% yield) was obtained by vacuum distillation with a boiling point of 60° C. at 5 mm Hg. The end-product was characterized by mass spectroscopy (MS) which is provided in FIG. 1 and shows, among other things, peaks at 137, 122, 106, 91, and 77. The molecular weight of the phenylmethylaminosilane was 137.27.

example 2

Alternative Synthesis Method for Phenylmethylaminosilane Using Monochloroaminosilane as a Reagent

[0114]In a 2000 ml three-necked flask equipped with a mechanical stirrer, a condenser, and a gas bubbling inlet, 1000 ml hexane, 53.5 g (0.5 mol) N-methylaniline, and 50.5 g (0.5 mol) triethylamine were cooled to −20° C. with stirring under nitrogen atmosphere. Monochlorosilane (MCS) was bubbled through the reaction mixture. A white solid precipitate was formed. After the reaction was complete, the temperature of the reaction mixture was allowed to warm to room temperature while stirring continued for an additional 2 hours at room temperature. Solid triethylamine hydrochloride salt was removed by filtration, and the solvent hexane was removed by distillation. The product phenylmethylaminosilane (51.3 g, 75% yield) was obtained by vacuum distillation with boiling point of 60 C at 5 mm Hg. The compound was characterized by mass spectroscopy and confirms that the product is phenylmethylaminosi

example 3

Synthesis of Phenylethylaminosilane Using Silyl Exchange Reaction

[0115]In a 500 ml Schlenk flask, 60.5 g (0.5 mol) N-ethylaniline and 131 g (1.0 mol) di-isopropylaminosilane were stirred at ambient temperature under a nitrogen atmosphere for 24 hours. The relatively lower boiling point by-product di-isopropylamine was removed with vacuum at a pressure of 20 mmHg and room temperature (25° C.). The reaction mixture was stirred for another 24 hours. The end-product phenylethylaminosilane was obtained by vacuum distillation. The end-product was characterized by mass spectroscopy (MS) which is provided in FIG. 2 and shows, among other things, peaks at 151, 150, 136, 120, 106, 93, and 77. The molecular weight of the phenylethylaminosilane was 151.28.

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Abstract

Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I:
wherein R1 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and R2 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino, a C6 to C10 aryl, a linear or branched C1 to C6 fluorinated alkyl, and a C4 to C10 cyclic alkyl group.

Description

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Claims

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Application Information

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Owner VERSUM MATERIALS US LLC
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