Resist underlayer film-forming composition that contains triaryldiamine-containing novolac resin to which aromatic vinyl compound is added

a technology of aromatic vinyl compound and film-forming composition, which is applied in the direction of instruments, photomechanical devices, coatings, etc., to achieve the effect of reducing the glass transition temperature (tg), and improving the thermal reflow property of the polymer

Pending Publication Date: 2020-12-10
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent describes improving the properties of a type of material called novolic resins used in electronic devices such as semiconductors. These materials have better thermal characteristics than other types of materials due to their ability to fill gaps without losing any electrical conductivity. They also improve planarity over larger areas compared to smaller areas. By adding certain substances like alkenes or unsaturated carboxylic acids, these novolics enhance the chemical bond between different parts of the material. Overall, this new method allows for more precise placement of patterns on various surfaces while maintaining excellent performance.

Problems solved by technology

The technical problem addressed in this patent text relates to improving the depth of focus in lithography processes while maintaining consistent thickness across different layers of the substrate being processed.

Method used

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  • Resist underlayer film-forming composition that contains triaryldiamine-containing novolac resin to which aromatic vinyl compound is added
  • Resist underlayer film-forming composition that contains triaryldiamine-containing novolac resin to which aromatic vinyl compound is added
  • Resist underlayer film-forming composition that contains triaryldiamine-containing novolac resin to which aromatic vinyl compound is added

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0158]A 300-mL four-necked flask was charged with 41.98 g (0.161 mol) of N,N′-diphenyl-1,4-phenylenediamine (available from Tokyo Chemical Industry Co., Ltd.), 31.02 g (0.161 mol) of 4-amyloxybenzaldehyde (available from Tokyo Chemical Industry Co., Ltd.), 94.75 g (0.537 mol) of 4-(tert-butoxy)styrene (available from Wako Pure Chemical Industries, Ltd.), and 172.37 g of propylene glycol monomethyl ether (available from Kanto Chemical Co., Inc.). To the mixture was added 4.65 g (0.048 mol) of methanesulfonic acid (available from Tokyo Chemical Industry Co., Ltd.), and the resultant mixture was stirred and heated to 135° C. for dissolution and initiation of polymerization. After the elapse of 18 hours, the mixture was left to cool to room temperature, and then a solvent mixture of 1,000 g of methanol (available from Kanto Chemical Co., Inc.), 1,000 g of ultrapure water, and 100 g of 30% aqueous ammonia (available from Kanto Chemical Co., Inc.) was added to the mixture for reprecipitation

example 2

[0161]1.00 g of pDPPDA-AOBA-TBOS as a polymer, 0.20 g of 2,2-bis[3,5-bis[(2-methoxy-1-methylethoxy)methyl]-4-hydroxyphenyl]propane (compound prepared by dehydration and condensation of four methylol groups of Formula (4-20) with propylene glycol monomethyl ether, abbreviated as “PGME-BIP-A” and shown by Formula (5-1)) serving as a crosslinking agent, 0.020 g of pyridinium-p-phenolsulfonate serving as a crosslinking catalyst (acid catalyst), and 0.001 g of a surfactant (product name: MEGAFAC [trade name] R-30N, available from DIC Corporation, fluorine-containing surfactant) were dissolved in 7.00 g of propylene glycol monomethyl ether and 16.36 g of propylene glycol monomethyl ether acetate, to thereby prepare a resist underlayer film-forming composition.

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Abstract

A resist underlayer film-forming composition including a novolac resin having a structural group (C) formed by reaction between an aromatic ring of an aromatic compound (A) having at least two amino groups and three C6-40 aromatic rings and a vinyl group of an aromatic vinyl compound (B). The structural group (C) may be a group of the following Formula (1):
[wherein R1 is a divalent group containing at least two amino groups and at least three C6-40 aromatic rings]. R1 may be a divalent organic group prepared by removal of two hydrogen atoms from aromatic rings of a compound of the following Formula (2):
R1 may be a divalent organic group prepared by removal of two hydrogen atoms from aromatic rings of N,N′-diphenyl-1,4-phenylenediamine.

Description

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Claims

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Application Information

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Owner NISSAN CHEM IND LTD
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