Method of Fabricating Thin Film by Microplasma Processing and Apparatus for Same

Provided is a method of fabricating, with satisfactory adhesion, a thin film of a metal or a metallic-compound, such as a metal oxide or nitride, on a substrate made of a high-melting-point material such as silicon or ceramics by using a metal or metallic-compound target as the primary raw material so as to eliminate the necessity of using harmful gases such as organometallic gas, and by using an atmospheric-pressure plasma generated under atmospheric pressure as a reaction field and also as a heat source. Additionally provided is an apparatus for fabricating the thin film. The thin-film fabrication method by microplasma processing includes the steps of disposing a raw material for thin-film fabrication in one or more tubes (A) having a uniform inner diameter throughout, introducing an inert gas and applying a high-frequency voltage to the narrow tubes (A) to generate high-frequency plasma in the narrow tubes (A), heating / evaporating the raw material while maintaining the flow rate of the plasma gas in the narrow tubes (A) and maintaining the plasma gas temperature high, ejecting the evaporated material from the narrow tubes (A) to spray it onto the substrate, heating the substrate with the plasma, and depositing the sprayed material on the substrate under atmospheric pressure.