17 results about "Chemical vapor deposition" patented technology

An intraluminal device is provided with a porous structure. The porous structure may be loaded with a bioactive substance to treat surrounding tissues after the intraluminal device has been implanted. The porous structure may be made by depositing a metal film on a foam structure using chemical vapor deposition. Porous structures may also be made by sintering or applying a ceramic layer to the intraluminal device. An intraluminal device is also provided with a ceramic material applied to generally straight portions of the device structure but not to portions adapted to bend. One advantage is that the ceramic material is less likely to fracture since it is applied to regions that experience less strain.

The invention provides an aluminum and aluminum alloy matrix aluminum nitride reinforced gradient composite surface layer. In the surface layer, aluminum and an aluminum alloy matrix are melted by nitrogen arc with a simple process to ensure that Al and N elements in a melting bath to perform nitridation reaction, namely Al reacts with N to generate AlN, so as to obtain the 'AlN reinforced gradient composite surface layer'. Compared with a thin surface nitridated (AlN) layer prepared by reactive sputtering, chemical vapor deposition, ion injection, plasma nitridation and other methods, the surface layer has large thickness (0.13-0.3mm), has the microstructural characteristic of surface gradient composites, and has remarkably improved microhardness and abrasion resistance compared with the aluminum and the aluminum alloy matrix.

The present invention provides a photocatalyst composite structure and a preparation method thereof. The photocatalyst composite structure has backbone-branch structural feature; the graphite type carbon nitride (g-C3N4) is the backbone, and carbon nanotubes(CNTs) grown in situ on the backbone chemical through vapor deposition (CVD) are the branches; and the nano photocatalyst coats on the entire backbone-branch complex structure surface. The invention has the advantages that the photocatalyst composite structure can degrade organic contaminants and realize photocatalytic water decomposition for hydrogen production under ultraviolet and visible light; in addition, the backbone-branch composite structure has large specific surface area, and can fully contact with organic pollutants and electrolyte solution to improve the photocatalytic efficiency.

A low temperature poly-silicon thin film element, method of making poly-silicon thin film by direct deposition at low temperature, and the inductively-coupled plasma chemical vapor deposition equipment utilized, wherein the poly-silicon material is induced to crystallize into a poly-silicon thin film at low temperature by means of high density plasma and substrate bias voltage. Furthermore, the atom structure of the poly-silicon thin film is aligned in regular arrangement by making use of the induction layer having optimal orientation and lattice constant close to that of the silicon, thus raising the crystallization quality of the poly-silicon thin film and reducing the thickness of the incubation layer.

The invention discloses an etching method for the diffusion layer of a crystalline silicon solar battery sheet. First, the silicon sheet that has been diffused and doped is put into a tubular thermal oxidation furnace, and a silicon sheet is deposited on the front side of the silicon sheet by a chemical vapor deposition method. layer of silicon dioxide film; place the silicon chip in the mixed solution of phosphoric acid and nitric acid to fully react the silicon chip with the solution, wherein the molar ratio of phosphoric acid to nitric acid is phosphoric acid: nitric acid = 2-5:10; Put the chip into hydrofluoric acid solution, remove the silicon dioxide film layer on the surface of the silicon chip, and then rinse it with deionized water. The etching method of the invention has the advantages of simple process, low equipment requirements, easy monitoring of the etching process, high production efficiency, and can effectively reduce the number of low-efficiency cells caused by etching.

The invention relates to a preparation method and application of a wafer-level absolute single-layer transition metal chalcogenide. The preparation method comprises the following steps that (1) first annealing treatment is carried out on a sapphire substrate to obtain a sapphire substrate with an atomic-scale flat surface; (2) a transition metal salt solution is loaded on the atomic-scale flat surface of the sapphire substrate obtained in the step (1), and secondary annealing treatment is carried out to obtain a sapphire substrate loaded with a monodisperse transition metal source; and (3) the transition metal chalcogenide is grown on the sapphire substrate loaded with the monodisperse transition metal source through a chemical vapor deposition method. A two-dimensional material prepared by the method is an absolute single layer, batch preparation on wafer-level (two inches, four inches, eight inches and twelve inches) sapphire substrates can be realized, the crystal quality is high, the single crystal size is large, the operation is simple, the cost is low, and industrialization is easy.

The invention relates to a method for preparing cubic boron nitride (cBN) single crystal-film homogeneous P-N junction, and belongs to a method for preparing semiconductor components. The method comprises the steps of: synthesizing a semiconducting cBN single crystal with semiconductor characteristic and preparing a doped cBN film, wherein the cBN film has the semiconductor characteristic opposite to that of the cBN single crystal; the semiconducting cBN single crystal with the semiconductor characteristic is synthesized by a high-pressure direct synthesis method or a high-pressure re-diffusion method; and the doped cBN film is prepared by taking the semiconducting cBN single crystal with the semiconductor characteristic as a substrate and doping and growing a cBN film with a semiconductor type opposite to a substrate type by a vacuum vapor deposition method. The vacuum vapor deposition method is a vacuum physical vapor deposition method or a vacuum chemical vapor deposition method. The method has the advantages of reduction in processing difficulties, improvement on production efficiency, yield and the like and great improvement compared with the conventional technology for preparing a cBN homogeneous P-N junction by high-pressure systemization and re-growth processes.

The invention discloses an exhaust gas treatment device of a metal organic chemical vapor deposition apparatus and application of the exhaust gas treatment device. The exhaust gas treatment device comprises an air inlet unit, an absorption unit, a monitor unit and a control unit, wherein the air inlet unit is used for inputting to-be-treated exhaust gas, the absorption unit is provided with a gasexhaust mouth, and is connected with the air inlet unit, and an absorption liquid for absorbing the to-be-treated exhaust gas is arranged in the absorption unit; the monitor unit is used for monitoring parameters of the absorption liquid in the absorption unit and outputting the parameters to the monitor unit, the parameters include the pH value, the ORP value and/or the temperature, and the control unit is used for controlling a servo component in the exhaust gas treatment device according to the parameter values and other signals which are output by the monitor unit, so that the corresponding parameters of the absorption liquid are adjusted. The treatment capability of the device is improved greatly, exhaust gas treatment of at most ten MOCVD devices can be met at the same time, the negative pressure is controlled by Venturi and a fan at the same time, and a wide negative pressure range and high accuracy are achieved.

The invention discloses a method for forming an amorphous silicon oxide laminated structure, which comprises the steps of forming a silicon oxide layer by using chemical vapor deposition, wherein the reactants comprise chlorosilane and oxygen free radicals. The method reduces the reaction temperature of the amorphous silicon layer forming process, avoids repeated heating and cooling processes in the reaction process, reduces time consumption and improves the capacity.

This invention discloses a large power MOS transistor and its process method with multi-silicon grating larger than silicon plane and simple process, which is based on the current process and removes the step two and three into the last two steps for operation to realize the process. This invention improves the multiple silicon shape to remain and improve the frequency characteristics.

The invention provides a chemical vapor deposition device. The chemical vapor deposition device comprises a reaction unit and a bearing panel; the reaction unit is used for generating a thin film on a substrate through a chemical vapor deposition reaction; the bearing panel is used for bearing the substrate and can drive the substrate to enter and exit from the reaction unit; the reaction unit comprises one or more reaction chambers, a heat preservation cavity is arranged in each reaction chamber, and each heat preservation cavity is a cylindrical body with two open ends. According to the chemical vapor deposition device, continuous production of graphene glass can be realized.

The invention provides a preparation method of an oriented electrical steel plate and the oriented electrical steel plate prepared by the method. The preparation method comprises the following steps: heating a plate blank; preparing a hot-rolled sheet by hot-rolling the heated slab; preparing a cold-rolled sheet by cold-rolling the hot-rolled sheet; carrying out decarburization annealing on the cold-rolled sheet; forming a ceramic coating on a part or all of one surface or two surfaces of the decarburized and annealed cold-rolled sheet by using a chemical vapor deposition (CVD) process; and performing final annealing on the cold-rolled sheet on which the ceramic coating layer is formed.