7 results about "Vapour deposition" patented technology

The invention discloses a preparation method of a porous diamond film. The preparation method of the porous diamond film comprises the following steps: putting a silicon substrate into a microwave-plasma chemical vapour deposition device, wherein a Pt metal film is plated on the surface of the silicon substrate as a catalyst; controlling the vacuum degree to be 10-30 millibars, introducing a working gas, loading a carbon source to a microwave-plasma generating region, and heating to 750-850 DEG C; depositing to obtain a blocky diamond film; calcining the film in the air atmosphere at the temperature of 500-600 DEG C, thus obtaining the porous diamond film. The preparation method of the porous diamond film has the advantages that no template is needed, no complex pre-treatment process or high temperature process is needed, metal pollution can be avoided, and a treatment process is further simplified.

A method utilising microwave plasma chemical vapour deposition (MPCVD) process of producing electronic device grade single crystal diamond comprising of: (a) selecting a diamond seed or substrate having a pre-determined orientation, (b) cleaning and/or etching of non-diamond phases and other induced surface damages from the diamond seed or substrate, whereby this step can be performed one or more times, (c) growing a layer of extremely low crystal defect density diamond surface on the cleaned/etched diamond seed or substrate, whereby this step can be performed one or more times, and (d) growing electronics device grade single crystal diamond on top of the layer of the low crystal defect density diamond surface.

A low temperature poly-silicon thin film element, method of making poly-silicon thin film by direct deposition at low temperature, and the inductively-coupled plasma chemical vapor deposition equipment utilized, wherein the poly-silicon material is induced to crystallize into a poly-silicon thin film at low temperature by means of high density plasma and substrate bias voltage. Furthermore, the atom structure of the poly-silicon thin film is aligned in regular arrangement by making use of the induction layer having optimal orientation and lattice constant close to that of the silicon, thus raising the crystallization quality of the poly-silicon thin film and reducing the thickness of the incubation layer.

The invention relates to a method for preparing cubic boron nitride (cBN) single crystal-film homogeneous P-N junction, and belongs to a method for preparing semiconductor components. The method comprises the steps of: synthesizing a semiconducting cBN single crystal with semiconductor characteristic and preparing a doped cBN film, wherein the cBN film has the semiconductor characteristic opposite to that of the cBN single crystal; the semiconducting cBN single crystal with the semiconductor characteristic is synthesized by a high-pressure direct synthesis method or a high-pressure re-diffusion method; and the doped cBN film is prepared by taking the semiconducting cBN single crystal with the semiconductor characteristic as a substrate and doping and growing a cBN film with a semiconductor type opposite to a substrate type by a vacuum vapor deposition method. The vacuum vapor deposition method is a vacuum physical vapor deposition method or a vacuum chemical vapor deposition method. The method has the advantages of reduction in processing difficulties, improvement on production efficiency, yield and the like and great improvement compared with the conventional technology for preparing a cBN homogeneous P-N junction by high-pressure systemization and re-growth processes.

The invention provides a chemical vapor deposition device. The chemical vapor deposition device comprises a reaction unit and a bearing panel; the reaction unit is used for generating a thin film on a substrate through a chemical vapor deposition reaction; the bearing panel is used for bearing the substrate and can drive the substrate to enter and exit from the reaction unit; the reaction unit comprises one or more reaction chambers, a heat preservation cavity is arranged in each reaction chamber, and each heat preservation cavity is a cylindrical body with two open ends. According to the chemical vapor deposition device, continuous production of graphene glass can be realized.

The invention provides a preparation method of an oriented electrical steel plate and the oriented electrical steel plate prepared by the method. The preparation method comprises the following steps: heating a plate blank; preparing a hot-rolled sheet by hot-rolling the heated slab; preparing a cold-rolled sheet by cold-rolling the hot-rolled sheet; carrying out decarburization annealing on the cold-rolled sheet; forming a ceramic coating on a part or all of one surface or two surfaces of the decarburized and annealed cold-rolled sheet by using a chemical vapor deposition (CVD) process; and performing final annealing on the cold-rolled sheet on which the ceramic coating layer is formed.