86 results about "Thin membrane" patented technology

A method for reforming an amorphous carbon film as part of a deposition process thereof, includes process of: (i) depositing an amorphous carbon film on a substrate in a reaction space until a thickness of the amorphous carbon film reaches a predetermined thickness, and then stopping the deposition process; and (ii) exposing the amorphous carbon film to an Ar and/or He plasma in an atmosphere substantially devoid of hydrogen, oxygen, and nitrogen.

The invention provides a method for preparing all-Inorganic perovskite films. The method include steps of 1) using temperature control technology and dissolving PbX<2> and CsX(X=Br, Cl, I) powder in an organic solvent under certain temperature to obtain a mixed solution; 2)spin coating the mixed solution on a substrate; and 3) standing the spin coated substrate for a while to obtain an all-Inorganic perovskite film, wherein the step 3) superfluous organic solvent on the surface of the film is removed through a vacuum-pumping method. The method is simpler and easier for operation than a conventional annealing film drying method, and the coverage rate of the obtained perovskite film is greater (approaching to 100%). The particles are smaller, and the performance of an electroluminescent device is better. The technical is simple, and the cost is low. Mass production of all-Inorganic perovskite electroluminescent device is facilitated.

A making method of a composite type biological chip based on a photonic crystal comprises four steps which are preparation of hard substrates, preparation of photonic crystal thin membranes, connection of membranous substrates and surface treatment of the substrates. (1) the preparation of hard substrates: common hard substrates are cleaned by soapy water, washed by de-ionized water and dried, and amino-group or hydroxyl is decorated on the surfaces of the substrates; (2) the preparation of photonic crystal: the nano-microspheres such as specific monodisperse silicon dioxide or polystyrene and the like, which are different in size according to the positions of testing signals, are assembled on the surfaces of the treated substrates to form the photonic crystal thin membrane with the thickness of 20 to 30 microns (3) the connection of membranous substrates: the surface of the photonic crystal thin membrane is laid with a layer of the membranous substrate and the connection is fixed by utilizing the chemisorption or the mutual function between positive and negative charges; (4) the surface treatment of the substrates: by using the methods such chemisorption and the like, chemical groups which can be fixedly connected with biomolecules to be tested are decorated on the membranous layer parts of the surfaces of the composite substrates which are formed in the step (3).

The invention belongs to the field of physics, and particularly relates to a vanadium dioxide double-layer film system and a preparation method and application thereof. The double-layer film system comprises a vanadium dioxide thin film layer and a silicon oxide gradient refractive index material thin film layer, and the gradient refractive index material thin film and the vanadium dioxide thin film are sequentially stacked from bottom to top. According to the vanadium dioxide double-layer film system, a material silicon oxide with a gradient refractive index function is utilized, so that thevanadium dioxide double-layer film system element has the spectral characteristics of ultra-wide waveband, full solid angle, polarization insensitivity and high transmittance.

The invention relates to the field of semiconductor manufacture, in particular to a method for preparing a double-stress thin film. The method for preparing the double-stress thin film is used for preparing a high-stress double-stress thin film by replacing a traditional silicon nitride thin film with a nitride-doped silicon carbide thin film. The method for preparing the double-stress thin film can not only meet the requirements of RC (resistance capacitance) delay of a plurality of advanced devices, but also avoid the problem of existence of an overlapping area in the traditional silicon nitride double-stress thin film process, thereby solving the loss of yield caused by the overlapping area; and the method for preparing the double-stress thin film is simple and easy to implement.

Embodiments disclosed herein relate to a TFT and methods for manufacture thereof. Specifically, the embodiments herein relate to methods for forming a semiconductor layer at a low temperature for use in a TFT. The semiconductor layer may be formed by depositing a nitride or oxynitride layer, such as zinc nitride or oxynitride, and then converting the nitride layer into an oxynitride layer with a different oxygen content. The oxynitride layer is formed by exposing the deposited nitride layer to a wet atmosphere at a temperature between about 85 degrees Celsius and about 150 degrees Celsius. The exposure temperature is lower than the typical deposition temperature used for forming the oxynitride layer directly or annealing, which may be performed at temperatures of about 400 degrees Celsius.

The invention belongs to the technical field of display screen processing, in particular to a manufacturing method of a special-shaped transparent display screen. During design of parallelogram, the parallelogram must be supplemented to be rectangular for machining; a supplementation direction is selected, poor connection caused by the fact that the same line is divided into different laser headsfor processing is avoided; the direction should be noticed when the parallelogram is completed; during pattern design, designing is carried out by taking an etching pattern as a reference; film cutting is carried out, under limitation by the working principle of a bonding machine (only the glass edge can be machined within the range of 3-5 mm, and the advancing direction is a straight line). The supplemented rectangle must be cut; the FPCB edge can be processed only after being manufactured into the glass edge, and in order to protect the pasted LED CHIP from being damaged, an anti-adhesive tape and a film are adopted to cover the part above the FPCB line, and then cutting, breaking and subsequent processing are carried out until binding is finished, and differentiated production of the parallelogram and a standard product is completely finished.

A thin film capacitor is provided with a lower electrode made of a metal foil containing many metal grains, a dielectric thin film formed on an upper surface of the lower electrode, and an upper electrode formed on an upper surface of the dielectric thin film. A lower surface of the lower electrode is an etched surface from which cross sections of the metal grains appear. The height difference between the cross sections of adjacent metal grains in the etched surface is 1 μm or more and 8 μm or less.

A sputtering target including an oxide that, includes an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al), and including a homologous structure compound represented by InAlO₃ZnO)_m (m is 0.1 to 10), wherein the atomic ratio of the indium element, the tin element, the zinc element and the aluminum element satisfies specific requirements.

The invention discloses an optical cable with a new structure and a production method thereof, and belongs to the technical field of optical cables. The optical cable with the new structure comprisesa reinforcement piece positioned in the centre of the optical cable, a plurality of loose sleeves which surround the periphery of the reinforcement piece and are internally embedded with a plurality of optical fibers, and an outer sheath positioned on the outer layer of the optical cable, and is characterized in that the gap between the plurality of the loose sleeves and the outer sheath is filledwith a PP thin film; and the loose sleeves and the reinforcement piece are tightly combined together through the PP thin film. In a layering stranding process of the production method for the opticalcable with the new structure, a layer of the PP thin film is extruded through a plastic extruding machine; the PP thin film is compressed to wrap the plurality of the loose sleeves by utilizing a compressing mould and fills the gap between adjacent two loose sleeves; after being cooled, the PP thin film is fixed on the periphery of the loose sleeves to form a cable core; and the optical cable with the new structure disclosed by the invention can effectively prevent the sleeves from deforming so as to keep the optical cable structure stable.

The invention discloses a nano-composite porous polyimide film and a preparation method thereof. The preparation method for the porous polyimide film comprises the following steps: 1) reacting nanoparticles with a silane coupling agent to obtain modified nanoparticles; 2) dissolving polyimide and an auxiliary additive in an organic solvent to obtain a polyimide solution; 3) mixing and dispersing the polyimide solution and the modified nanoparticles, adding water, and carrying out mixing and emulsifying to obtain a Pickering emulsion; and 4) coating a substrate with the emulsion, and carrying out drying to obtain the product. The preparation method disclosed by the invention has the characteristics of mild conditions, low cost, simple and convenient operation process and technology and thelike. Due to the fact that water drops and the modified nanoparticles are selected, air holes can be introduced into the polyimide film at low cost without an extra step for removing, a dielectric constant is reduced, and meanwhile, the mechanical property of the film can be improved by adding the nanoparticles; and the polyimide film is expected to be applied to the industries of electronics, microelectronics, aerospace and the like.

A method of manufacturing a nano-structured aluminum oxide film. The first step involves degreasing an aluminum plate using a degreasing solution. The next step involves electropolishing the aluminum plate after degreasing with an electropolishing solution that is free of perchloric acid and chromic acid. The next step involves pre-anodizing the aluminum plate after electropolishing with an anodization acid solution for a first predetermined time period. The next step involves anodizing the aluminum plate after electropolishing with the anodization acid solution for a second predetermined time period to form an anodized membrane on the aluminum plate. The next step involves separating the anodized membrane from the aluminum plate with a solution free of chrome. The last step involves cleaning the anodized membrane.

The invention discloses a vanadium dioxide (VO2) intelligent thermal control device with a longhorn beetle-imitating multistage structure and a preparation method thereof, and belongs to the technicalfield of intelligent thermal control coating layers. The problems that an existing intelligent thermal control device based on VO2 is small in emissivity change and high in solar absorption ratio aresolved. The VO2 intelligent thermal control device with the longhorn beetle-imitating multistage structure is composed of a semiconductor substrate layer, an infrared high-reflection metal layer, anHfO2 dielectric layer, a VO2 layer and a protective layer in sequence from bottom to top. The preparation method comprises the steps: 1, preparing the infrared high-reflection metal layer; 2, preparing a dielectric film; 3, preparing a VO2 film; 4, processing a microstructure; and 5, depositing a protective layer. The invention discloses the vanadium dioxide intelligent thermal control device withthe longhorn beetle-imitating multistage structure and the preparation thereof.

The invention discloses an all-organic composite material film and a preparation method and application thereof. The all-organic composite material film comprises a polymer matrix and an organic filler, the polymer matrix is polyvinylidene fluoride-co-hexafluoropropylene, and the organic filler is a terpolymer of methyl methacrylate, butadiene and styrene. The polymer is used as a matrix, the organic filler is used as a dispersion phase, and the obtained all-organic composite material film has the advantages of being low in dielectric loss, high in breakdown strength, high in discharge energy density, good in physical and mechanical performance, high in electrical insulation performance, simple in preparation process, suitable for industrial production and engineering application and the like.

The invention discloses an OLED display panel which comprises a display area and a non-display area and further comprises an array substrate, a first retaining wall, a second retaining wall, a plurality of metal routings, a plurality of first grooves and a thin film packaging layer, wherein the metal routing layer is located in a fan-out routing area, close to a lower frame, of the array substrate, part of the metal routings are arranged along the direction perpendicular to the first retaining wall, and the included angle between the other part of the metal routings and the first retaining wall is an acute angle; the plurality of first grooves are arranged in the fan-out routing area and are arranged along the direction of the metal routings; the part, corresponding to the second area, ofthe array substrate is further provided with a plurality of second grooves, and the second grooves are distributed along the direction perpendicular to the first retaining wall.

The invention provides a preparation method of a multi-layer glass substrate, a glass substrate and a Mini-LED glass substrate. The method comprises the following steps: S100, forming a first through hole in a glass substrate, and filling the first through hole with first conductive slurry; S200, carrying out circuit manufacturing; S300, coating with an insulating layer which covers the surface of the glass substrate and the circuit, and then arranging a composite film layer on the surface of the insulating layer; S400, forming a second through hole, used for being filled with second conductive slurry so as to conduct the second conductive slurry with the first conductive slurry, penetrating through the insulating layer and the composite film layer, filling the second through hole with the second conductive slurry, and then taking out the composite film layer t; and S500, circulating step S200 to step S400 for a plurality of times so as to form multiple layers of conductive circuits on the glass substrate, and finally forming the finished product.

The invention belongs to the technical field of laser application, and particularly relates to a metal oxide micro-nano structure based on femtosecond laser direct writing as well as preparation and application of the metal oxide micro-nano structure. The preparation method comprises the following steps of: firstly, mixing a metal oxide precursor with a solvent to prepare metal oxide precursor sol-gel, then coating the surface of a substrate with the sol-gel obtain a gel film, and carrying out femtosecond laser direct writing; and enabling the metal oxide precursor to react to generate a metaloxide micro-nano structure by utilizing energy generated by high peak power of femtosecond laser. According to the method, the preparation of the metal oxide micro-nano structure is directly realizedthrough a femtosecond laser direct writing technology, and the metal oxide can be directly sintered without other treatment due to high femtosecond laser peak power, so that the method is convenientand quick. The method is suitable for any hydrophilic or hydrophobic substrate, and can realize the preparation of any metal oxide micro-nano structure with high precision, cross scale and high orientation.

The invention discloses a PEG modified SiO2-TiO2 composite self-cleaning antireflection film and a preparation method thereof. The self-cleaning antireflection film contains 20-25 wt% of TiO2 and 75-80 wt% of SiO2, and round holes with the diameter of 10-40 nm are distributed in the face, deviating from a glass substrate, of a film. The invention further discloses the preparation method of the antireflection film. The preparation method comprises the following steps: adding SiO2 into TiO2 to prepare SiO2-TiO2 mixed sol, dividing the SiO2-TiO2 mixed sol into two parts, adding PEG into one part,coating with the SiO2-TiO2 mixed sol and the SiO2-TiO2 mixed sol doped with the PEG in sequence, annealing, and volatilizing the PEG on the top layer to form a hole structure. The prepared antireflection film with the gradually changed refractive index has the average transmittance of 97.4% in a visible light interval and the highest transmittance of higher than 99%; besides, due to the additionof TiO2, the contact angle of the film can be reduced under the illumination condition, and the self-cleaning performance of the film can be improved. The method is low in cost, simple and environment-friendly in preparation and low in requirement on the shape of the substrate, and large-scale mass production can be realized.

The invention provides a chitin@MXene@Ni chain thin film material and a preparation method and application thereof. According to the chitin@MXene@Ni chain thin film material, chitin, few layers of MXene and Ni chains serve as raw materials. The thin film material is prepared from chitin, MXene and Ni chains with the mass percentage of 50 to 20-30 to 30-50, and a chitin@MXene@Ni chain thin film is finally obtained through suction filtration and hot pressing. The preparation method of the composite material has the characteristics of stability, controllability, simplicity and easiness in operation, and the material has the characteristics of thin thickness and strong electromagnetic wave shielding capability. Therefore, the invention provides a novel thought for design and synthesis of industrial production of electromagnetic wave shielding materials.

The invention discloses a weather-proof building material film and a preparation method thereof, which belong to the technical field of films. The weather-proof building material film sequentially comprises an outer layer film, a middle layer film and a veneering layer film which are fixedly connected from the upper layer to the lower layer. The weather-proof building material film disclosed by the invention has a high-strength film surface, excellent weather resistance, aging resistance and yellowing resistance, excellent transparency and long service life.

The invention relates to a high-temperature-resistant, water-oxygen-resistant and low-infrared-emissivity composite film for a ceramic-based composite material and a preparation method. The high-temperature-resistant, water-oxygen-resistant and low-infrared-emissivity composite film for the ceramic-based composite material is of a single-layer complex-phase structure, and the surface of a target object is covered with the composite film when the composite film is used; and the thin film is a continuously formed high-temperature conductive composite thin film and comprises two main components, wherein a high-conductivity metal material is used as a low-infrared-emissivity component, and an environment barrier coating material for the ceramic-based composite material is used as a protection component. After process optimization, the emissivity of the composite film of 2-22 microns can be less than 0.1 after the composite film is used in a high-temperature air environment of 1000 DEG C for 2 h, the composite film has excellent performances of low emissivity, high temperature resistance, water and oxygen resistance and the like, and the preparation process is simple and the operation is easy.