33 results about "Thin-film transistor" patented technology

There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate electrode with a width narrower than the first gate electrode. A semiconductor layer is doped with phosphorus of a low concentration through the first gate electrode. In the semiconductor layer, two kinds of n⁻-type impurity regions are formed between a channel formation region and n⁺-type impurity regions. Some of the n⁻-type impurity regions overlap with a gate electrode, and the other n⁻-type impurity regions do not overlap with the gate electrode. Since the two kinds of n⁻-type impurity regions are formed, an off current can be reduced, and deterioration of characteristics can be suppressed.

The present invention provides a display panel of a flat panel display device of a four-color structure in which color mixture may not occur in a white sub-pixel and a method for fabricating the same. The display device includes first, second, third, and fourth sub-pixels, and each sub-pixel includes a thin film transistor. A color filter is formed adjacent to the thin film transistor of each of the first, second, and third sub-pixels, a planarization layer is formed on the color filters, and a pixel electrode is connected to each thin film transistor.

The present invention discloses a thin film transistor and a method of fabricating the same. The thin film transistor includes an insulating substrate; and a semiconductor layer, a gate insulating layer, a gate electrode, an interlayer insulator, and a source/drain electrode which are formed on the substrate, wherein the gate insulating layer is formed of a filtering oxide layer having a thickness of 1 to 20 Å.

The invention provides a preparation method of a top gate metal oxide thin film transistor (TFT), belonging to the technical field of semiconductors. The method comprises the following steps: preparing a source/drain electrode; then preparing a metal oxide material; coating a photoresist on the surface of the metal oxide material and carrying out chemical mechanical polishing on the photoresist layer; processing the metal oxide which is not masked by the photoresist by annealing or plasmas; and finally stripping the photoresist and depositing a gate insulation layer material through magnetronsputtering and forming a gate through wet etching. The method has the following beneficial effects: reliable ohmic contact between the metal oxide thin film and the source/drain electrode can be formed by utilizing the characteristic that the metal oxide material can be converted into a conductor from a semiconductor after undergoing special processing.

The invention relates to an amorphous silicon image sensor with a storage capacitor structure, comprising a plurality of pixel units. Each pixel unit comprises a grid wiring, a first insulating layer, an active layer, a data wiring, a second insulating layer, a storage capacitor, a photosensitive diode, a passivation layer and a bias voltage wire, wherein the storage capacitor is arranged below the photosensitive diode; a lower electrode of the storage capacitor is formed on a glass substrate or the first insulating layer, and an upper electrode of the storage capacitor is formed on a dielectric layer and connected with a source electrode; a first electrode of the photosensitive diode is in co-electrode with the upper electrode of the storage capacitor; and a second electrode of the photosensitive diode is conductive with the lower electrode of the storage capacitor and the bias voltage wire. By means of the amorphous silicon image sensor disclosed by the invention, the charge storagecapacity of the pixel units is increased under the condition of not enlarging or reducing pixel dimensions by arranging the storage capacitor below the photosensitive diode, and therefore the purposeof enhancing the signal dynamic range of a thin film transistor matrix panel under the precondition of not losing the resolution ratio of the thin film transistor matrix panel is achieved.

Provided is a display device in which a defect by external light reflection is minimized in a non-display area. The display device includes a display panel and a touch unit arranged on the display panel. The display panel may include: a substrate including a display area and a non-display area arranged around the display area; an insulator including a valley portion, the valley portion being defined as an opening arranged along an outer side of the display area in the non-display area; and a display unit arranged in the display area and including a light-emitting element electrically connected to a thin film transistor. The touch unit may include a reflection prevention unit that overlaps the valley portion and is configured to reduce reflectivity of external light.

The present invention relates to a transflective thin film transistor substrate and method of fabricating the same. A liquid crystal display device according to the present invention includes: a gate line crossing a data line with a gate insulating film there between to define a pixel area; a thin film transistor connected to the gate line and the data line; an organic film on the gate line, the data line and the thin film transistor, having a transmission hole passing through the gate insulating film in the pixel area; a pixel electrode on the organic film via the transmission hole and connected to the thin film transistor; and a reflective electrode having an edge part different from an edge part of the pixel electrode on the pixel electrode and exposing the pixel electrode of the transmission hole.

The invention provides a liquid crystal display device without a frame. The liquid crystal display device without the frame comprises a rear shell a backlight module arranged inside the rear shell, a rubber frame arranged on the backlight module and fixedly connected with the rear shell and a liquid crystal display panel arranged on the rubber frame. The liquid crystal display panel comprises a color filter (CF) substrate, a thin film transistor (TFT) substrate, an upper polaroid and a lower polaroid, wherein the TFT substrate is arranged with the CF substrate in an attached mode, the upper polaroid and the lower polaroid are respectively attached to the CF substrate and the TFT substrate, the upper polaroid is soft polarizing film, the upper end of the upper polaroid is connected with the rubber frame, so that the upper end of the liquid crystal display panel is fixed on the rubber frame. A distance breaking position is formed on a lower end edge position of the CF substrate and the TFT substrate, surface decoration materials are pressed and combined on the distance breaking position and fixed on the rubber frame, so that the liquid crystal display panel is assembled on the rubber frame. According to the liquid crystal display device without the frame, due to the facts that the upper polaroid is made into the soft polarizing film and the upper end of the upper polaroid is connected with the rubber frame, the upper end of the liquid crystal display panel is fixed on the rubber frame, and the surface decoration materials are pressed and combined at the lower end of the liquid crystal display panel and the lower end of the liquid crystal display panel is fixed on the rubber frame, the liquid crystal display panel can be installed on the rubber frame in a detachable mode, and fixing of the liquid crystal display panel of the liquid crystal display device without the frame is achieved.

The invention provides a LCD of a double-film transistor pixel structure, containing first and second scanning lines, first and second signal lines, and pixel. The pixel contains pixel electrodes, and first and second transistors. The gates and sources of the first and second transistors are linked with the first and second scanning lines and the first and second signal lines, respectively, the drains of the two transistors are connected to the pixel electrodes. The first transistor channel's length-width ratio is less than the second one's.

The invention discloses a light sensor comprising first and second thin film transistors, a voltage follower, a third thin film transistor and an output unit. First ends of the first and second thin film transistors and an input end of the voltage follower are connected to a first node. One thin film transistor in the first thin film transistor and the second thin film transistor is switched on inresponse to a control signal thereof, the third thin film transistor obtains the following voltage of the first node through the voltage follower and transmits the following voltage to the output unit, and a first digital voltage is outputted after conversion. The other one of the thin film transistors receives illumination to generate a light leakage current to change a potential of the first node, the third thin film transistor obtains the following voltage of the first node through the voltage follower and transmits the following voltage to the output unit, and a second digital voltage isoutputted after conversion. An embodiment of the present invention provides the light sensor, a light detecting method and a display device, and a signal to noise ratio and test accuracy can be improved.

The invention discloses a pixel structure, a method for driving the pixel structure, a display substrate and a display panel. The pixel structure comprises a first thin film transistor, a second thin film transistor and a pixel electrode, wherein the first thin film transistor is connected to a grid line on the current line, a data line on the current row, and a pixel electrode, and the second thin film transistor is connected to a grid line on the previous line, a discharge line on the previous line, and the pixel electrode; the second thin film transistor is used for being switched on under the control of the grid line on the previous line, so that the pixel electrode can conduct discharging on the discharge line on the previous line through the second thin film transistor which is switched on; the first thin film transistor is used for being switched on under the control of the grid line on the current line, so that the data line on the current row can conduct charging on the pixel electrode through the first thin film transistor which is switched on. The charging and discharging efficiency of the pixel electrode is improved.

The invention relates to the technical field of display, and discloses a thin film transistor and a manufacturing method thereof and a display substrate. According to the manufacturing method of the thin film transistor, the oxygen content during film forming of a metal oxide material is reduced, so that the square resistivity of the formed film can be lowered, and the requirements of a conductivematerial can be met; and therefore, a source electrode and a drain electrode of the thin film transistor can be manufactured through the metal oxide, so that the source electrode and the drain electrode can be prepared in the same film-forming chamber as an active layer, and a film forming equipment cavity for preparing the source electrode and the drain electrode is omitted, thereby improving the production efficiency of the thin film transistor and lowering the production cost of the display substrate.

The invention discloses an array substrate row drive circuit and a drive method of the array substrate row drive circuit. The array substrate row drive circuit comprises a plurality of levels of array substrate row drive modules and a plurality of thin film transistors, wherein the input ends of the array substrate row drive modules with the set level number receive different upwards pulling control signals through the corresponding thin film transistors and output corresponding grid signals; for each of the array substrate row drive modules with the set level number, the falling edge of the upwards pulling control signals received by the input end of the array substrate row drive module is level with the rising edge of the grid signals output by the input end of the array substrate row drive module. With the adoption of the scheme, the circuit and the method have the advantages that the overlapping in time of the upwards pulling control signals received by the input ends of the array substrate row drive modules with the set level number and the grid signals output by the input ends of the array substrate row drive modules with the set level number can be avoided, so that the Q node electric potential is not influenced when the array substrate row drive circuit is in the high-temperature operation environment, and then a liquid crystal display panel can be normally used in the high-temperature operation environment.

A method for repairing base plate of thin film transistor array includes exerting a pulse light beam with pulse width of 1/20-1/4 second on residue between pixel electrodes at said base plate in order to remove off at least a partial residue and to make those pixel electrodes at two sides of said residue be electrically insulated.

The invention discloses a niobium alloy sputtering target material and a preparation method thereof. The niobium alloy sputtering target material comprises 40-80 parts of niobium element and 20-60 parts of titanium element. The preparation method of the niobium alloy sputtering target material comprises the following steps: fully and uniformly mixing niobium powder, titanium powder and activated carbon powder under the action of protective gas to obtain mixed powder; then filling a rubber sleeve with the mixed powder, and carrying out cold isostatic pressing to obtain a green body; then loading the green body into a sheath and carrying out vacuum degassing, and carrying out hot isostatic pressing treatment on the degassed sheath to obtain a sintered blank; heating the sintered blank under the protective atmosphere, and then carrying out hot rolling, leveling and annealing to obtain a niobium alloy plate blank; and finally, grinding the niobium alloy plate blank to obtain the niobium alloy sputtering target material. The niobium alloy sputtering target material produced by adopting the method is high in purity and fine in crystal grain, can be used for manufacturing a transition layer material matched with a copper film layer in a TFT-LCD (Thin Film Transistor-Liquid Crystal Display) manufacturing process, has good matching with the copper film layer in the aspects of corrosion resistance, thermal stability and the like, and relieves the defects in the TFT-LCD manufacturing process.

The invention provides a generation method for spacer supports and a liquid crystal box structure, and relates to the technical field of liquid crystals. The method includes the steps that one side ofan optical filter is coated with photoresist; a mask plate is arranged in advance, and the photoresist on appointed positions of the optical filter is irradiated from the side, coated with the photoresist, of the optical filter; the photoresist on the optical filter is cleaned, so that the spacer supports which are generated by the photoresist at the appointed positions are obtained. The photoresist at the appointed positions is irradiated and generates the spacer supports, then in the forming process of the liquid crystal box, the spacer supports on the optical filter are located on a grid electrode metal wire or a source electrode metal wire or a drain electrode metal wire of a thin film transistor on a substrate to support the optical filter and the substrate, are prevented from makingcontact with a segment gap in the thin film transistor, accordingly, it is avoided that since errors exist in the segment gap of the thin film transistor, the height of the liquid crystal box has errors, and the precision of the height of the liquid crystal box is improved.

The invention provides an array substrate, a display panel and a manufacturing method of the array substrate. The array substrate comprises a plurality of pixels. Each pixel comprises a thin film transistor, a first conducting layer, a second conducting layer and a third conducting layer. Each second conducting layer is arranged on each thin film transistor; each third conducting layer is arranged on each second conducting layer and is connected with each first conducting layer. A plurality of pixels comprise n pixels arrayed along a first direction; the second conducting layer of the kth pixel in the n pixels is at least partially overlapped with the third conduction layer of the kth pixel so as to form a first capacitor of the kth pixel; the second conducting layer of the (k+1)th pixel in the n pixels is at least partially overlapped with the first conduction layer of the kth pixel so as to form a second capacitor of the kth pixel, wherein k is larger than or equal to 1 and less than or equal to n-1, and n is a positive integer. According to the array substrate, the display panel and the manufacturing method of the array substrate provided by the invention, the size of a pixel capacitor of each pixel can be increased.

The invention discloses manufacturing methods and manufacturing apparatuses of a display panel and a thin film transistor. The manufacturing method of the thin film transistor comprises the followingsteps of: forming an uncrystallized active layer on a substrate; forming a shading layer on the active layer; and carrying out crystallization processing on the active layer by using laser above the shading layer. The width of the shading layer is smaller than that of the corresponding active layer. According to the manufacturing method of the thin film transistor of the invention, the shading layer is arranged above an auxiliary layer before the active layer is crystallized, and then a laser-induced junction is used for enabling the active layer to have an uncrystallized region, and the region can effectively inhibit the leakage current of the device, so that the switching ratio of the device can be increased, and the stability of the device is improved.

The invention discloses a manufacturing method of a display panel. The manufacturing method comprises the following steps: forming a thin film transistor layer on a substrate; forming a flat layer onthe side of the thin film transistor layer away from the substrate, wherein the material of the flat layer is siloxane; placing a mask plate at the position at a certain distance from the flat layer,performing ultraviolet irradiation on the local area of the flat layer through the mask plate and oxidizing the flat layer located in the local area; and performing dry etching on the flat layer to remove the oxidized flat layer located in the local area and enabling the thin film transistor layer to be exposed in the local area. The temperature is not higher than 200 DEG C in case of curing the flat layer, which will not cause sharp reduction of the performance of TFT devices or even failure, thus improving the reliability of OLED.

The invention provides a high-screen duty ratio display device with fingerprint identification, which comprises a lower substrate, an upper substrate and a cover plate. The lower substrate has a thinfilm transistor array layer provided with a plurality of thin film transistors and corresponding capacitors to provide a display area on the thin film transistor array layer. The upper substrate is located on one side of the thin film transistor array layer and has an optical film layer and a color filter layer. The cover plate is located on one side of the upper substrate, and has an aperture toreceive a fingerprint identification module, wherein the aperture of the cover plate is at least partially corresponding to the display area, and a space is formed below the aperture of the cover plate to receive a part of the fingerprint identification module.

The invention provides a display structure of double-gate driving equipment and a display device. The display structure of the double-gate driving equipment comprises a substrate, thin film transistors, and a plurality of pixel areas formed by insulating layers and passivation layers in sequence; and gate lines which are used for transmitting display signals, wherein the two gate lines penetrate through each pixel area; and the two thin film transistors arranged in each pixel area are arranged on the two sides of a first space formed by the two gate lines respectively. The two film transistors in each pixel area are arranged on the two sides of the first space formed by the two gate lines respectively, so that the problem that in the prior art, the risk of flicker of a display screen of display equipment and the probability of crosstalk are high is solved, namely, the storage capacitance of the display structure is increased, and the risk of flicker of the display screen and the probability of crosstalk are reduced.

The invention provides a display panel, a manufacturing method thereof and a display device. The display panel comprises a substrate and a thin film transistor layer, wherein the thin film transistor layer is located on the substrate and comprises an active layer, a metal layer and an anti-reflection layer; the anti-reflection layer is at least located on the side, close to the active layer, of the metal layer; and the reflectivity of the anti-reflection layer is smaller than that of the metal layer. According to the display panel, light irradiated to the active layer can be reduced, the risk of failure caused by performance change of the thin film transistor layer is reduced, and the working stability and reliability of the thin film transistor layer are improved.