In a
thin film transistor, a first insulating film on a
silicon layer formed in an island on a substrate is smaller in thickness than the
silicon layer so that the stepped island edges is gentle in slope to facilitate covering the island with a second insulating film. This reduces occurrence of gate leak considerably. Since the
peripheral region of the stepped island is smaller in thickness than the
central region above the channel, it is possible to minimize occurrence of gate
electrode breakage. The
silicon layer contains two or more
inert gas atoms, and the atoms smaller in
mass number (e.g., He) are contained in and near an interface with a silicon
active layer while the atoms larger in
mass number (e.g., Ar) than those smaller in
mass number are contained in and near a second interface with a gate
electrode.