62 results about "Image sensor" patented technology

The invention relates to a camera module package including a lens barrel having at least one lens therein and an IR filter installed at a lower end thereof. The package also includes a housing having the lens barrel disposed movable in an optical axis direction in an inner hole thereof. The package additionally includes a ceramic substrate attached to a lower end of the housing, the ceramic substrate having an opening formed on an upper surface thereof corresponding to the position of the lens. The package further includes an image sensor electrically connected to a lower part of the ceramic substrate, the image sensor having an image sensing region thereof exposed through the opening of the ceramic substrate. This prevents damaging the components by the adhesive leaking during the assembly, defective products due to infiltration of extraneous material, improves product reliability and reduces manufacturing costs.

An image sensor is described in which the imaging pixels have reduced noise by blocking nitridation in selected areas. In one example, an imaging pixel of an image sensor includes a photodiode region to accumulate an image charge in response to incident light, a first transistor having a gate oxide layer, the gate oxide layer having a first level of nitridation, and a second transistor having a gate oxide layer, the gate oxide layer having a second level of nitridation that is higher than the first level of nitridation.

An analog to digital converter (ADC) can include a multi-input comparison unit configured to compare a pixel voltage from an image sensor, a comparison voltage comprising a stepped voltage modified during a coarse mode of operation, and a ramp voltage comprising a ramped voltage modified to one another during a fine mode of operation, to provide a comparison result signal that indicates whether the comparison voltage combined with the ramp voltage is greater than or less than the pixel voltage. A selection control signal generation unit can receive the comparison result signal and a mode control signal, to indicate the coarse or fine mode, to provide a selection control signal allowing modification of the comparison voltage in the coarse mode and to hold the comparison voltage constant in the fine mode. A reference voltage selection unit can receive the selection control signal to control modification of the comparison voltage.

The invention relates to an amorphous silicon image sensor with a storage capacitor structure, comprising a plurality of pixel units. Each pixel unit comprises a grid wiring, a first insulating layer, an active layer, a data wiring, a second insulating layer, a storage capacitor, a photosensitive diode, a passivation layer and a bias voltage wire, wherein the storage capacitor is arranged below the photosensitive diode; a lower electrode of the storage capacitor is formed on a glass substrate or the first insulating layer, and an upper electrode of the storage capacitor is formed on a dielectric layer and connected with a source electrode; a first electrode of the photosensitive diode is in co-electrode with the upper electrode of the storage capacitor; and a second electrode of the photosensitive diode is conductive with the lower electrode of the storage capacitor and the bias voltage wire. By means of the amorphous silicon image sensor disclosed by the invention, the charge storagecapacity of the pixel units is increased under the condition of not enlarging or reducing pixel dimensions by arranging the storage capacitor below the photosensitive diode, and therefore the purposeof enhancing the signal dynamic range of a thin film transistor matrix panel under the precondition of not losing the resolution ratio of the thin film transistor matrix panel is achieved.

An optical apparatus includes a heat sink radiating the image sensor, a cooling fan unit configured to cool the heat sink, and a first lens barrel including a hollow portion configured to guide light to the image sensor. The first lens barrel holds the cooling fan unit and house the holder unit movably in the hollow portion in an optical axis direction of the image pickup optical system. The holder unit includes a first inlet and a first outlet. The first lens barrel includes a second inlet for taking in external air and a second outlet for exhausting the external air taken in through the second inlet. The first inlet is connected to the second inlet and the first outlet is connected to the second outlet when the holder unit is positioned in the hollow portion of the first lens barrel.

The invention relates to a device for detecting methane or carbon dioxide through optical interference, which comprises an optical path system using the same optical source to generate two groups of optical interference stripes, an image sensor converting the physical position information of the two groups of stripes into electric signals, and an electric signal collecting and processing part used for identifying the physical positions of the two groups of stripes and finally determining the methane content in the air. The invention also comprises a method for detecting the concentration of methane and carbon dioxide with the advantage of automatic zero tracking and precision automatic compensation capacity. The device and the method have the characteristic of adopting two groups of stripes in the same optical path to realize the differencing of the optical images; then the whole system processes data in a differencing mode, which greatly improves the anti-interference capacity of equipments. The device and the method are based on the automatic compensation principle of instrument precision, solve the difficulties of severe precision unbalancing and severe zero point excursion of the traditional optical interference methane detecting instrument caused by the aberration of the optical system, can intelligently identify when the precision of the instrument is severely unbalanced, and can effectively calibrate.

The invention relates to an unmanned corn harvester, and belongs to the technical field of unmanned aerial vehicle application. An unmanned aerial vehicle flies in low altitude over the unmanned corn harvester which performs corn harvesting operation, the lower face of the front portion of the unmanned aerial vehicle is provided with an electro-optical pod, a high-pixel digital camera installed in the electro-optical pod performs full-automatic photography work by aiming at the corn harvester which harvests corn and surrounding corn field, an image sensor of the digital camera inputs acquired aerial image information of grain field into a first electronic computer to be stored and imaged, and a digital image is input into a flight control computer to guide flying of the unmanned aerial vehicle. The aerial image information of the grain field is input into a second electronic computer through a first wireless communication device in the unmanned aerial vehicle, radio waves and a second wireless communication device in the unmanned corn harvester to be stored and calculated, and a calculated result is input into an unmanned self-control driving device to control a corn harvesting table arranged on the front portion of the unmanned corn harvester to perform operation of harvesting the corn.

An image sensor has an imaging surface irradiated with an optical image of an object scene, and repeatedly generates an object scene image. A CPU repeatedly determines whether or not a specific variation exceeding a reference is generated in the object scene captured by the image sensor, in parallel with a generating process of the object scene image by the image sensor. When a determination result is updated from a negative result to an affirmative result, the CPU waits for an elapse of a designated period, then, determines presence or absence of a generation of a flicker, and executes a flicker countermeasure process, as needed.

An image sensor module structure includes a substrate, a photosensitive chip, a lens holder, and a lens barrel. The substrate has an upper surface on which first electrodes are formed, and a lower surface on which second electrodes are formed. The photosensitive chip is mounted on the upper surface of the substrate, and is electrically connected to the first electrodes of the substrate. The lens holder has an upper end face, a lower upper face, and an opening penetrating through the lens holder. The upper end of the opening is formed with an internal thread, and the lower end of the opening is formed with a breach. The lens holder is adhered on the upper surface of the substrate by glue, therefore, the photosensitive chip is located within the opening of the lens holder. The lens barrel has an upper end face, a lower end face, and an external thread screwed to the internal thread of the lens holder.

The invention discloses a CMOS image sensor dual-mode communication receiving system of an integrated photoelectric detector. The system comprises a CMOS image sensor of the integrated photoelectric detector, a 01 picture generation module, a threshold value generation module, a light source detection module, a gray image generation module, a high-speed communication signal processing module and a low-speed communication signal processing module. The CMOS image sensor of the integrated photoelectric detector outputs an image signal, a mark picture is generated through self-feedback by employing the threshold value generation module, the gray image generation module and the 01 picture generation module, a detected light source position is fed back to the CMOS image sensor of the integrated photoelectric detector via the light source detection module, a received communication signal is processed via the high-speed communication signal processing module and the low-speed communication processing module, high-speed communication information and low-speed communication information are outputted, and the reception of dual-mode communication is realized. According to the system disclosed by the invention, the accuracy of light source detection is effectively improved; and the system can be used in visible light communication.

An image sensor pixel includes a substrate doped to have a first conductivity type. A first epitaxial layer is disposed over the substrate and doped to also have the first conductivity type. A transfer transistor gate is formed on the first epitaxial layer. An epitaxially grown photo-sensor region is disposed in the first epitaxial layer and has a second conductivity type. The epitaxially grown photo-sensor region includes an extension region that extends under a portion of the transfer transistor gate.

A digital image-capturing device includes an outer lens barrel, an image sensor disposed in the outer lens barrel, an inner lens barrel mounted in the outer lens barrel, and a lens module mounted in the inner lens barrel. The outer lens barrel has a barrel coupling segment formed with an internal screw thread, and a barrel guiding segment. The inner lens barrel has a barrel engaging segment formed with an external screw thread to engage threadedly the internal screw thread of the barrel coupling segment, and a barrel sliding segment in sliding and rotatable contact with the barrel guiding segment. When the inner lens barrel is inserted into the outer lens barrel, the barrel guiding segment can guide the barrel sliding segment to prevent the inner lens barrel from wobbling and to maintain optical axis alignment, thereby ensuring image-capturing quality of the device.

An image capturing apparatus comprises an optical system, an image sensor having pixels each including a plurality of photoelectric converters capable of outputting image signals independently, a driving unit which controls driving of the image sensor, a focus detection unit, and an addition unit which adds the output image signals on a per-pixel basis. In each pixel, the photoelectric converters are divided into groups each including at least two photoelectric converters and a charge accumulation period for one group is delayed from and partially overlaps a charge accumulation period for another. The driving unit drives the image sensor so that image signals are read from the groups in turn, and the focus detection unit detects a focus state using a phase difference method based on the read image signals independently output from the photoelectric converters.

A solid-state image sensor includes a pixel formed, upon forming a structure where a photoelectric conversion layer is laminated on a wiring layer constituting a pixel circuit, by forming at least the photoelectric conversion layer and a wiring layer bonding layer on a different substrate from a semiconductor substrate in which the wiring layer is formed, and by bonding the wiring layer bonding film of the different substrate and the wiring layer of the semiconductor substrate together.

The invention discloses a solid-state multi-line ranging device, which comprises a emitted light module, a ranging module, an image sensor and a spectroscope, wherein the emitted light module emits infrared detection light, the infrared detection light emits into the environment and is reflected when encountering a measured object; the infrared detection light and environment visible light reflected by the measured object incident on the spectroscope, and the spectroscope separates the infrared detection light from the environment visible light; the ranging module receives the infrared detection light which passes through or is reflected by the spectroscope, and obtains a distance between the ranging device and the measured object based on a time of flight method, and/or the ranging device obtains intensity of the received infrared detection light; and the image sensor receives the environment visible light which is reflected by or passes through the spectroscope, and obtains image color information of the measured object. The solid-state multi-line ranging device does not have a mechanical rotating device, is more stable, and has longer service life.

Provided is an image sensor and a method for manufacturing the same. The image sensor includes a substrate on which a circuitry including a first lower metal line and a second lower metal line is formed. A lower electrode is formed on the first lower metal line. A separation metal pattern surrounds the lower electrode and connected to the second lower metal line. An intrinsic layer is formed on the lower electrode. A second conductive type conduction layer is formed on the intrinsic layer. An upper electrode is formed on the second conductive type conduction layer. A bias can be applied to the second lower metal line such that the separation metal pattern can provide a Schottky Barrier, directing electrons to the lower electrode and inhibiting crosstalk between pixels.

The invention relates to image sensor packaging piece and its optical glass and processing method. The packaging piece includes chip carrier, annular bearing, sensor chip, and optical glass. It includes the following steps: processing grinding before cutting the whole optical glass into many monomers; forming many optical glass monomers with at least one brim rough surface to adhere on the sensor chip bearing to reduce thermal expansion coefficient difference, avoid delaminating caused by thermal stress, prevent moisture and impurity from invading to ensure sensor chip accepting optical signal capacity.

A photodiode formed over a silicon substrate is disclosed. The photodiode includes a light-receiving region formed of a diffusion region of a first conduction type at the surface of the silicon substrate and forming a pn junction; an intermediate region formed of a diffusion region of the first conduction type at the surface of the silicon substrate so as to be included in the light-receiving region; a contact region formed of a diffusion region of the first conduction type at the surface of the silicon substrate so as to be included in the intermediate region; a shield layer formed of a diffusion region of a second conduction type in a part of the surface of the silicon substrate outside the intermediate region; and an electrode in contact with the contact region. The shield layer faces the side end part of the diffusion region forming the intermediate region.

The invention provides a forming method of a back-illuminated image sensor with a three-dimensional transistor structure. The forming method of a three-dimensional transistor gate structure comprises the steps that a source follower transistor and/or reset transistor with a three-dimensional transistor structure is formed, wherein the source follower transistor and/or reset transistor is corresponding to a raised structure; an insulating sidewall is formed around the raised structure; a groove is formed between the insulating sidewall and a transistor channel region corresponding to the raised structure; and a transistor gate region is formed in the groove and is isolated by the insulating sidewall.

An image restoration method includes providing image data (260) including image statistics (230) using a digital camera module. A set of digital camera module characterization parameters is selected from a common dynamic camera configuration file (210) using the image statistics (230). The selected digital camera module characterization parameters are converted to image signal processing parameters and the image data is tuned using the image signal processing parameters for providing a tuned image (270). The method may involve lens shading correction as well adjusting the processing to the characteristics of the image sensor (250).

A drive apparatus that guarantees the stable operation of a CCD image sensor. The drive apparatus includes a drive circuit for supplying a pulse signal to the CCD image sensor. A power supply circuit is connected to the drive circuit to supply the drive circuit with a voltage for generating the pulse signal. The power supply circuit includes an over-boosting circuit for temporarily over-boosting the voltage supplied to the drive circuit to generate an over-boosted voltage, prior to the charge transfer operation of the CCD image sensor.

An image sensor with color filters capable of minimizing a distance through which incident light reaches photodiodes and flattening the color filters by minimizing step heights among color filters, and a method of manufacturing the same are provided. In the image sensor with the color filters, a metal is doped into an interlayer insulating SiO₂ layer opened through a photosensitive film, and the color filters of red, green, and blue are formed in the interlayer insulating SiO₂ layer through a heat treatment. In this case, a color filter array can be flattened by removing step heights among color filters generated in an conventional method in which the interlayer insulating SiO₂ layer is sequentially coated with the color filters of red, green, and blue so as to form a color filter array. In addition, the distance through which the incident light reaches the photodiodes can be reduced by forming the color filters in the interlayer insulating SiO₂ layer, thereby improving the sensitivity of the image sensor.

A projection assembly displays a virtual driving environment, associated with a vehicle, in the interior portions of an actual vehicle. A capture and processing subsystem includes at least one image sensor and at least one processor, and is removably mounted to the interior of the actual vehicle and is operatively coupled to the projection assembly. The image sensor has a field of view encompassing at least a portion of a driver's side area of the actual vehicle. The processor translates a vehicle operating action performed by a driver of the vehicle to a virtual action in the virtual driving environment. The translation is based in part on images captured by the image sensor.

An image sensing apparatus, a color-correction matrix correcting method and a look-up table establishing method are provided. The image sensing apparatus calculates a block statistics value corresponding to a block of pixels in an image sensor array. Based on a look-up table, the image sensing apparatus determines a covariance value corresponding to a current gain value. According to the covariance value and the block statistics value, the image sensing apparatus corrects a color-correction matrix corresponding to the block of pixels. The image sensing apparatus can use an amended color-correction matrix to correct the color of the pixel, so as to reduce chroma noise or other noise.

The invention discloses a method for detecting an edge sealing effect of a board. The method comprises the following steps: acquiring first board image information through a first image sensor, wherein the first board image information comprises a first board surface image and an edge sealing band area image; acquiring second board image information through a second image sensor, wherein the second board image information comprises a second board surface image, the second board surface image comprises a laser projection line projected on the surface of the board, and first board image information and the second board image information are the image information of the same board; and performing board defect early warning on the acquired image information. The invention further discloses anelectronic device and a computer-readable storage medium. According to the method for detecting the edge sealing effect of the board, by matching laser projection with image identification, the purpose of detecting multiple different defects at the same time can be achieved, and the detection efficiency and the detection effect of the edge sealing effect of the board are greatly improved.