31results about "Radiation controlled devices" patented technology

An image pickup device is disclosed that has little deformation caused by thermal expansion of a transparent resin for sealing an image pickup element. The image pickup device includes an image pickup element having a light receiving surface, a micro-lens for condensing incident light to the image pickup element, a first transparent plate disposed on the light receiving surface of the image pickup element with the micro-lens in between, a transparent resin that seals the image pickup element and the first transparent plate, and a second transparent plate disposed on the transparent resin to face the first transparent plate.

A quad photoreceiver includes a low capacitance quad InGaAs p-i-n photodiode structure formed on an InP (100) substrate. The photodiode includes a substrate providing a buffer layer having a metal contact on its bottom portion serving as a common cathode for receiving a bias voltage, and successive layers deposited on its top portion, the first layer being drift layer, the second being an absorption layer, the third being a cap layer divided into four quarter pie shaped sections spaced apart, with metal contacts being deposited on outermost top portions of each section to provide output terminals, the top portions being active regions for detecting light. Four transimpedance amplifiers have input terminals electrically connected to individual output terminals of each p-i-n photodiode.

A solid-state imaging device has: an imaging region in which a plurality of pixels each having a photoelectric conversion element are arranged, and a color filter. The color filter includes: filter components of a first color (2G), filter components of a second color (2R) formed by self-alignment and each being surrounded by the filter components of the first color (2G), and filter components of a third color (2B) formed by self-alignment and each being surrounded by the filter components of the first color (2G).

The invention relates to an amorphous silicon image sensor with a storage capacitor structure, comprising a plurality of pixel units. Each pixel unit comprises a grid wiring, a first insulating layer, an active layer, a data wiring, a second insulating layer, a storage capacitor, a photosensitive diode, a passivation layer and a bias voltage wire, wherein the storage capacitor is arranged below the photosensitive diode; a lower electrode of the storage capacitor is formed on a glass substrate or the first insulating layer, and an upper electrode of the storage capacitor is formed on a dielectric layer and connected with a source electrode; a first electrode of the photosensitive diode is in co-electrode with the upper electrode of the storage capacitor; and a second electrode of the photosensitive diode is conductive with the lower electrode of the storage capacitor and the bias voltage wire. By means of the amorphous silicon image sensor disclosed by the invention, the charge storagecapacity of the pixel units is increased under the condition of not enlarging or reducing pixel dimensions by arranging the storage capacitor below the photosensitive diode, and therefore the purposeof enhancing the signal dynamic range of a thin film transistor matrix panel under the precondition of not losing the resolution ratio of the thin film transistor matrix panel is achieved.

An image sensor module structure includes a substrate, a photosensitive chip, a lens holder, and a lens barrel. The substrate has an upper surface on which first electrodes are formed, and a lower surface on which second electrodes are formed. The photosensitive chip is mounted on the upper surface of the substrate, and is electrically connected to the first electrodes of the substrate. The lens holder has an upper end face, a lower upper face, and an opening penetrating through the lens holder. The upper end of the opening is formed with an internal thread, and the lower end of the opening is formed with a breach. The lens holder is adhered on the upper surface of the substrate by glue, therefore, the photosensitive chip is located within the opening of the lens holder. The lens barrel has an upper end face, a lower end face, and an external thread screwed to the internal thread of the lens holder.

A radiological imaging apparatus capable of improving an arrangement density of semiconductor radiation detectors and detector units thereof, each detector unit consisting of a plurality of combined substrates having a detector substrate which includes semiconductor radiation detectors and a signal processing substrate which includes integrated circuits, housed in a housing. The detector substrate protrudes outward from an opening of the housing. A plurality of detector units are attached to a ring-shaped unit support section in a circumferential direction thereof. More specifically, the detector substrate protrudes inward from the unit support section and the housing is attached to the unit support section.

A solid-state image sensor includes a pixel formed, upon forming a structure where a photoelectric conversion layer is laminated on a wiring layer constituting a pixel circuit, by forming at least the photoelectric conversion layer and a wiring layer bonding layer on a different substrate from a semiconductor substrate in which the wiring layer is formed, and by bonding the wiring layer bonding film of the different substrate and the wiring layer of the semiconductor substrate together.

Provided is an image sensor and a method for manufacturing the same. The image sensor includes a substrate on which a circuitry including a first lower metal line and a second lower metal line is formed. A lower electrode is formed on the first lower metal line. A separation metal pattern surrounds the lower electrode and connected to the second lower metal line. An intrinsic layer is formed on the lower electrode. A second conductive type conduction layer is formed on the intrinsic layer. An upper electrode is formed on the second conductive type conduction layer. A bias can be applied to the second lower metal line such that the separation metal pattern can provide a Schottky Barrier, directing electrons to the lower electrode and inhibiting crosstalk between pixels.

An apparatus adapted for confocal imaging of a non-flat specimen comprising a coherent light source for producing a light beam, imaging optics adapted to focus the light beam into at least one spot on a surface of a specimen, and a detector adapted to receive and detect light reflected from the specimen surface. The imaging optics comprise at least one optical component located so that the light reflected from the specimen surface passes therethrough on its way to the detector. The optical component is movable so as to move the at least one spot, within a range of movement, to a number of distinct locations in a plane perpendicular to the apparatus' optical axis, within the detector's integration time.

The invention relates to image sensor packaging piece and its optical glass and processing method. The packaging piece includes chip carrier, annular bearing, sensor chip, and optical glass. It includes the following steps: processing grinding before cutting the whole optical glass into many monomers; forming many optical glass monomers with at least one brim rough surface to adhere on the sensor chip bearing to reduce thermal expansion coefficient difference, avoid delaminating caused by thermal stress, prevent moisture and impurity from invading to ensure sensor chip accepting optical signal capacity.

The invention provides a forming method of a back-illuminated image sensor with a three-dimensional transistor structure. The forming method of a three-dimensional transistor gate structure comprises the steps that a source follower transistor and/or reset transistor with a three-dimensional transistor structure is formed, wherein the source follower transistor and/or reset transistor is corresponding to a raised structure; an insulating sidewall is formed around the raised structure; a groove is formed between the insulating sidewall and a transistor channel region corresponding to the raised structure; and a transistor gate region is formed in the groove and is isolated by the insulating sidewall.

A semiconductor device according to an embodiment of the present disclosure includes: a first substrate provided with an active element; and a second substrate laminated with the first substrate and electrically coupled to the first substrate, in which the second substrate is provided with a first transistor configuring a logic circuit on a first surface and with a non-volatile memory element on a second surface opposite to the first surface.

The invention provides a sensing device, which comprises a light emitting module and a sensing layer arranged in a stack; the light emitting module comprises a plurality of light emitting elements which emit near infrared light; the sensing layer includes a plurality of quantum dot thin film transistors; the quantum dot thin film transistor comprises an active layer and a quantum dot covering theactive layer; the light emitted by the plurality of light emitting elements is reflected by the object to be measured and received by the plurality of quantum dot thin film transistors. The inventionalso provides a sensing method. The sensing device of the invention can better sense the suspension operation or biometric identification.

A method for manufacturing a solid-state image sensor, the method comprising preparing a substrate including a photoelectric conversion portion, forming, on the substrate, a structure which includes a first member made of a material containing silicon oxide and a second member arranged on the first member and made of a material containing silicon carbide, forming an opening in a position above the photoelectric conversion portion in the structure by removing a part of the first and the second members, and forming a transparent member in the opening, wherein the second member is formed at a first temperature and the transparent member is formed at a second temperature lower than the first temperature.

The invention relates to an imaging device, a preparation method thereof, an imaging array and a preparation method thereof. The method comprises the following steps: providing a quantum dot photosensitive material; forming a stacked photodiode based on the quantum dot photosensitive material; wherein the photodiode comprises at least one first diode and at least two second diodes, and the first diodes and the second diodes are sequentially arranged at intervals; each first diode is conducted under a first direction voltage, and each second diode is conducted under a second direction voltage; the first direction voltage and the second direction voltage are respectively one of forward voltage and backward voltage. Therefore, according to the method, a smoke column does not need to be welded, and the problems of non-uniform signal response, blind pixels and the like caused by the smoke column are avoided; and meanwhile, the process complexity is reduced, and the manufacturing cost is reduced. According to the imaging device prepared by the method, switching of two detection modes is realized by modulating bias voltage, an imaging light path system and a later software processing process are simplified, and the pixel loss rate and alignment deviation are reduced.

The invention discloses a minisize sensing device. The minisize sensing device comprises a sensing element, a columnar formed plastic and a plurality of circuits, wherein the sensing element is provided with a bottom surface; the columnar formed plastic is axially connected with the sensing element, the columnar formed plastic comprises a connecting part and a bearing part, wherein the connecting part is provided with a first end surface which is connected with the bottom surface, the bearing part is integrally formed and connected with the connecting part, and a plurality of electronic elements are configured on the bearing part; the plurality of circuits are formed on the bearing part. According to the invention, the problem that the sensing element is connected with a circuit board by necessarily utilizing the traditional changeover mechanism is solved through the integrally formed connecting part and bearing part; and the effect of shortening the outer diameter of the integral minisize sensing device disclosed by the invention is achieved in such a way that the columnar formed plastic is axially connected with the sensing element.

A method for forming an image sensor device is provided. The method includes forming a first trench in a semiconductor substrate. The semiconductor substrate has a front surface and a back surface, and the first trench extends from the front surface into the semiconductor substrate. The method includes forming a first isolation structure in the first trench. The method includes forming a light-sensing region in the semiconductor substrate. The first isolation structure surrounds the light-sensing region. The method includes forming a second trench in the semiconductor substrate. The second trench extends from the back surface into the semiconductor substrate and exposes the first isolation structure. The method includes forming a second isolation structure in the second trench. The secondisolation structure includes a light-blocking structure to absorb or reflect incident light.

The invention belongs to the technical field of ultraviolet detectors, and particularly relates to an ultraviolet detector and a preparation method thereof. The ultraviolet detector comprises a substrate; a pixel lattice structure and a reading circuit, which are arranged on the surface of the substrate, wherein the pixel lattice structure is composed of a plurality of pixel units; and wide band gap oxide film layers that grow on the pixel units respectively, wherein the growth temperature of the wide band gap oxide film layers is 20-450 DEG C. According to the ultraviolet detector provided by the invention, the wide band gap oxide semiconductor film layers are directly grown and constructed on the substrate provided with the pixel lattice structure and the reading circuit at low temperature; and compared with a traditional mode of growing a thin film firstly and then connecting a reading circuit, the ultraviolet detector has the advantages of being simple in preparation and easy to control, and has a very wide market prospect.

The invention provides an image sensor and a manufacturing method thereof. A redistribution effect can be realized without forming a redistribution layer structure on a substrate, so that the method is flexible and easy to operate; and series-parallel connection among a plurality of sensor chips can be realized, so that electric connection after package is no longer needed.

Low-power, dual sensitivity thin oxide FG-MOSFET sensors in RF-CMOS technology for a wireless X-ray dosimeter chip, methods for radiation measurement and for charging and discharging the sensors are described. The FG-MOSFET sensor from a 0.13 μm (RF-CMOS process, includes a thin oxide layer having a device region, a source and a drain associated with the device well region, separated by a channel region, a floating gate extending over the channel region, and a floating gate extension extending over the thin oxide layer adjacent to the device well region. In a matched sensor pair for dual sensitivity radiation measurement, the floating gate and the floating gate extension of a FG-MOSFET higher sensitivity sensor are without a salicide layer or a silicide layer formed thereon and the floating gate and the floating gate extension of a FG-MOSFET lower sensitivity sensor have a salicide layer or a silicide layer formed thereon.