Solid-state imaging device, drive method thereof and camera system
a solid-state imaging and drive method technology, applied in the direction of television system, radio frequency controlled device, instruments, etc., can solve the problems of large current flow constant at high-speed operation, difficult to have sufficient dynamic range, and lowering the signal level across the board, so as to reduce the settling time of the load element circuit
Active Publication Date: 2011-11-03
SONY CORP
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Benefits of technology
[0020]The technique described in Patent Document 2 has an advantage that initial movement is speeded up, however, it is necessary to turn off the control signal before settlement to return the current to a steady state, and the final settling operation starts from the state.
[0021]It can be expected that the settling time can be reduced as a whole because the second settlement can be started from the state with reduced error, however, it is difficult to control timing and there is concern that the effect varies or will be limited.
[0023]Thus, it is desirable to provide a solid-state imaging device, a drive method thereof and a camera system capable of reducing settling time of a load element circuit without causing the increase of power consumption.
[0027]According to the embodiments of the invention, settling time of the load element circuit can be reduced without causing the increase of power consumption.
Problems solved by technology
However, in the technique described in Patent Document 1 that merely increases current, there is a problem that the signal level is lowered across the board and it is difficult to have sufficient dynamic range.
Additionally, large current flows constantly at the high-speed operation.
It can be expected that the settling time can be reduced as a whole because the second settlement can be started from the state with reduced error, however, it is difficult to control timing and there is concern that the effect varies or will be limited.
Method used
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Embodiment Construction
sensor including four transistors according to the embodiment;
[0031]FIG. 4 is a circuit diagram showing a specific configuration example of each load element unit of the current source circuit according to the embodiment;
[0032]FIG. 5 is a view showing state transition from the turning on of a selection transistor of the pixel until a vertical signal line becomes a settlement level;
[0033]FIG. 6 is a circuit diagram showing another specific configuration example of each load element unit of the current source circuit according to the embodiment; and
[0034]FIG. 7 is a view showing an example of a configuration of a camera system to which the solid-state imaging device according to an embodiment of the invention is applied.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0035]Hereinafter, embodiments of the invention will be explained with reference to the drawings.
[0036]The explanation will be made in the following order.
[0037]1. Outline of the entire configuration of a solid-state imaging devi...
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A solid-state imaging device includes: pixel signal reading lines; a pixel unit in which pixels including photoelectric conversion elements are arranged; and a pixel signal reading unit performing reading of pixel signals from the pixel unit through the pixel signal reading lines, wherein the pixel signal reading unit includes current source circuits each of which includes a load element as a current source connected to the pixel signal reading line forming a source follower, and the current source circuit includes a circuit generating electric current according to a slew rate of the pixel signal reading line and replicating electric current corresponding to the above electric current to flow in the current source.
Description
BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a solid-state imaging device typified by a CMOS image sensor, a drive method thereof and a camera system.[0003]2. Description of the Related Art[0004]In recent years, the CMOS image sensor receives attention as a solid-state imaging device (image sensor) as an alternative to a CCD image sensor. There are the following reasons for this.[0005]Dedicated processes are necessary for manufacturing CCD pixels, plural power supply voltages are necessary for the operation and further, it is necessary to coordinate plural peripheral ICs to operate the CCD.[0006]In response to the above, the CMOS image sensor overcomes various problems such that the system becomes extremely complicated in the CCD image sensor.[0007]The CMOS image sensor can use the same manufacturing processes as a common CMOS integrated circuit in manufacture thereof, which can be driven by a single power supply and which can mix ...
Claims
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IPC IPC(8): H04N5/335H01L27/146
CPCH04N5/378H04N5/335H04N25/00H04N25/75H04N23/54
Inventor GENDAI, YUJITOYOMURA, JUNJIKANAGAWA, NORIFUMI
Owner SONY CORP
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