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55 results about "Solid-state" patented technology

Solid-state electronics means semiconductor electronics; electronic equipment using semiconductor devices such as semiconductor diodes, transistors, and integrated circuits (ICs). The term is also used for devices in which semiconductor electronics which have no moving parts replace devices with moving parts, such as the solid-state relay in which transistor switches are used in place of a moving-arm electromechanical relay, or the solid-state drive (SSD) a type of semiconductor memory used in computers to replace hard disk drives, which store data on a rotating disk.

Solid-state imaging device, method of manufacturing the same, and camera

A solid-state imaging device is provided. The solid-state imaging device includes a plurality of arrayed pixels, an optical inner filter layer, and an inner-layer lens. Each of the plurality of arrayed pixels includes a photoelectric conversion portion and a pixel transistor. The optical inner filter layer is configured to block infrared light and faces a light-receiving surface of the photoelectric conversion portion of a desired pixel among the arrayed pixels. The inner-layer lens is formed below the optical inner filter layer.
Owner:SONY CORP

Solid-state imaging apparatus

InactiveUS20080030605A1Television system detailsTelevision system scanning detailsDifferential signalingPhotoelectric conversion
A solid-state imaging apparatus including: a pixel section having two-dimensionally arrayed unit pixels each having a first pixel and a second pixel respectively containing photoelectric conversion devices that are located at positions regarded as the same position at which image is formed by an imaging optical system; a reset control means for simultaneously resetting respectively independently all first pixels and all second pixels of each unit pixel arrayed in the pixel section; a difference signal output means for obtaining a difference signal between signals of the first pixel and of the second pixel; a control section for rendering control such that a reset is effected of signals of all first pixels of the pixel section and, after a desired exposure time, a reset is effected of signals of all second pixels of the pixel section by the reset control means, and then signals of the first pixel and of the second pixel are read out respectively in a simultaneous or substantially simultaneous manner immediately after the reset of signal of all second pixels by the reset control means so as to output a difference signal between these as imaging signal by the difference signal output means; and a characteristic difference correction means for correcting a characteristic difference between the first pixel and the second pixel.
Owner:OLYMPUS CORP

Solid-state imaging device, drive method thereof and camera system

ActiveUS20110267522A1SpeedReduced settling timeTelevision system detailsTelevision system scanning detailsPhotoelectric conversionSlew rate
A solid-state imaging device includes: pixel signal reading lines; a pixel unit in which pixels including photoelectric conversion elements are arranged; and a pixel signal reading unit performing reading of pixel signals from the pixel unit through the pixel signal reading lines, wherein the pixel signal reading unit includes current source circuits each of which includes a load element as a current source connected to the pixel signal reading line forming a source follower, and the current source circuit includes a circuit generating electric current according to a slew rate of the pixel signal reading line and replicating electric current corresponding to the above electric current to flow in the current source.
Owner:SONY CORP

Solid state image pickup device, method of manufacturing the same, image pickup device, and electronic device

InactiveCN101853866AReduce the effects of chromatic aberrationReduce exposure timeSolid-state devicesRadiation controlled devicesTransducerPhotoelectric conversion
The invention relates to a solid state image pickup device, a method of manufacturing the same, an image pickup device, and an electronic device. The solid state image pickup device includes a pixel section defined by unit pixels arrayed in line and row directions of a semiconductor substrate. Each of the unit pixels includes a photoelectric transducer that is formed on the semiconductor substrate and converts incident light into a signal charge, a waveguide that is formed above the photoelectric transducer and guides the incident light to the photoelectric transducer, and a microlens that is formed above the waveguide and guides the incident light to an end of light incident side of the waveguide. The waveguide has a columnar body with a constant cross section from the end of light incident side to an end of light exit side, and is arranged such that a center of rays of the incident light incident from the microlens on the end of light incident side of the waveguide is aligned with a central axis of the waveguide.
Owner:SONY CORP

Thermal storage type vacuum tube

InactiveCN101639296AExtended service lifeIncrease the heat exchange areaHeat storage plantsSolar heat devicesSolar waterMetallic materials
The invention relates to a thermal storage type vacuum tube which comprises a tubular glass outer shell, an open end of the glass outer shell is connected with a glass flange, the glass flange is connected with a metal end cover through the hot-pressing sealing technology, a protective cap of an exhaust nozzle is arranged at the other end of the glass outer shell, an exhaust nozzle which is integrally molded with the glass outer shell is arranged in the protective cap of the exhaust nozzle, a metal material box body is arranged in the glass outer shell, a solar energy selective coating is arranged on the outer surface of the box body, space between the glass outer shell and the box body is pumped into vacuum state through the exhaust nozzle, a water inlet and a water outlet are respectively formed on the metal end cover, the water inlet and the water outlet are communicated through a heat exchange tube arranged in the box body, and a working medium in the box body adopts solid-liquid phase change materials with phase change temperature of 60DEG C-80DEG C. The working medium in the box body adopts the solid-liquid phase change materials, when the solid-liquid phase change materialsachieve the phase change point, the materials are converted to liquid state from solid state, and a large amount of heat is absorbed, and the temperature of the phase change materials can be basicallymaintained constant. The thermal storage type vacuum tube can be widely applied in a variety of solar water heaters.
Owner:北京桑达太阳能技术有限公司

Electrochemical pipeline erosion corrosion testing device

ActiveCN109444236AEnables electrochemical measurementsEasy to analyzeMaterial electrochemical variablesTest efficiencyMaterial Erosion
The invention provides an electrochemical pipeline erosion corrosion testing device. A sample adopted in an experimental facility is a real pipeline which is clamped by PVC (polyvinyl chloride) flanges at two ends and connected into a pipeline by the same, and the flange at one end is used for mounting of a solid-state reference electrode. A cylindrical electrode is adopted as an auxiliary electrode which is positioned on a central axis of the pipeline, a water-facing end of the auxiliary electrode which is conically shaped is inserted into a central circular ring of an externally-connected flange and has functions of supporting and position adjusting, and a thread is formed in an outer side of a water outlet end of the auxiliary electrode, is fixed in the center of a titanium alloy flangeand has functions of fixing and supporting. The electrochemical pipeline erosion corrosion testing device has the advantages that the sample in the experimental facility is tubular and can be obtained by cutting a real pipeline or processing a bar material, an internal flow state in an annular tube section of the sample is similar to that in a real pipeline, mounting is facilitated, and testing efficiency can be improved; by a three-electrode connection manner, stability maintaining of medium flow state inside an experimental pipeline can be facilitated, a testing result is enabled to be morestable and reliable, and analysis of a corrosion mechanism of a material in a pipeline erosion corrosion environment can be facilitated better.
Owner:725TH RES INST OF CHINA SHIPBUILDING INDAL CORP

Method for preparing rare-earth compound with NaZn13 structure by solid state diffusion

ActiveCN102808103AMagnetic materialsHeat-exchange elementsSolid-stateMagnetic refrigeration
The invention relates to a method for preparing a rare-earth compound with a NaZn13 structure by the solid state diffusion of an interface, and belongs to the technical field of magnetic refrigeration materials. The method comprises the following steps of: preparing rare earth-enriched intermediate alloy and Fe-base silicon-containing intermediate alloy, processing the Fe-base silicon-containing intermediate alloy into a shape required by a material with the NaZn13 structure, and processing the rare earth-enriched intermediate alloy into a shape corresponding to that of the Fe-base silicon-containing intermediate alloy, so that the rare earth-enriched intermediate alloy can cover the surface of the Fe-base silicon-containing intermediate alloy; covering the surface of the Fe-base silicon-containing intermediate alloy by the rare earth-enriched intermediate alloy sheets to form a diffusion couple with a smooth combination surface; and after annealing the diffusion couple, taking the diffusion couple out, and quenching by using ice water to obtain rare earth-transition group metal compound which has the shape of the Fe-base silicon-containing intermediate alloy and the NaZn13 structure on the surface of the Fe-base silicon-containing intermediate alloy of the combination surface of the diffusion couple. By the method, the problem of poor machining performance of the rare earth-transition group metal compound is solved, and the method can be used for a magnetic refrigeration air-conditioning technology and a magnetic refrigeration technology.
Owner:UNIV OF SCI & TECH BEIJING

Al-Co-W alloy with alternating lamellar microstructure characteristics and preparation method thereof

The invention discloses an Al-Co-W alloy with alternating lamellar microstructure characteristics and a preparation method thereof, relates to preparation of novel materials and in particular relates to an alloy with alternating lamellar microstructure characteristics and a preparation method thereof. The structure of the alloy comprises an alternating lamellar structure, and the lamellar pairs occur periodically. In the Al-Co-W alloy system, Al component can diffuse quickly, Co component can diffuse slowly and W component is immovable basically. The preparation method comprises the following steps: preparing a CoxWy type intermetallic compound or a (Co-W) solid solution by using components Co and W of which the diffusion rates are different, and grinding the intermetallic compound or solid solution into small particles; controlling the heating temperature and reaction mode in a protective atmosphere so that the component Al in solid state, liquid state or gas state reacts with the CoxWy type intermetallic compound or the (Co-W) solid solution; reacting for a proper period of time, rapidly cooling to room temperature, thereby obtaining the alloy with alternating lamellar microstructure characteristics. According to the invention, a novel path is provided for preparation of novel composite materials and connection of out-phase materials.
Owner:CHANGZHOU UNIV

Method for the compensation of image disturbances in the course of radiation image recordings and radiation image recording apparatus

A method is for the compensation of image disturbances in the course of a radiation image recording caused by a defocusing of an antiscatter grid, arranged in the beam path between a beam source and a digital radiation image receiver and focused with respect to a specific distance from the focus of the beam source. Such image disturbances are caused by a defocusing-dictated attenuation of the primary radiation incident on the radiation image receiver. A solid-state image detector includes radiation-sensitive pixels arranged in matrix form and a device for pixelwise amplification of the radiation-dependent signals. In the method, at least some of the signals supplied in pixelwise fashion are amplified by an amplifying device in a manner dependent on the actual distance of the antiscatter grid from the focus.
Owner:SIEMENS HEALTHINEERS AG
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