Solid state image pickup device, method of manufacturing the same, image pickup device, and electronic device

一种固态图像拾取、像素的技术,应用在辐射控制装置、电路、电气元件等方向,能够解决刺耳噪声、颜色阴影等问题,达到降低阴影和颜色混合的效果

Inactive Publication Date: 2010-10-06
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] The difference in sensitivity between the first and second green pixels Gb and Gr may cause noise, such as harsh noise, and may also cause color shading

Method used

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Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0107] First example structure of solid-state image pickup device

[0108] will refer to Figure 3A to Figure 3C A schematic cross-sectional view and a schematic plan layout of . Figure 3A shows the unit pixel at the center of the image corner, Figure 3B shows the unit pixel at the corner edge, Figure 3C A pixel portion including a plurality of unit pixels is shown.

[0109] Hereinafter, reference numeral 1 denotes a solid-state image pickup device, 11 denotes a semiconductor substrate, 12 denotes a photoelectric converter, 14 denotes an interlayer insulating film, 16 denotes a waveguide, 17 denotes a color filter layer, 18 denotes a microlens, and 19 denotes a waveguide hole, 20 denotes a pixel portion, 21 denotes a unit pixel, 53 denotes a waveguide material film, 200 denotes an image pickup device, 201 denotes an image pickup unit, 202 denotes a light condensing optical unit, 203 denotes a signal processing unit, and 210(1) denotes a solid state Image pickup device. ...

no. 3 example

[0245] Example structure of image pickup device

[0246] Next, we will refer to Figure 29 An example structure of an image pickup apparatus according to a third embodiment of the present invention is described. This image pickup device uses a solid-state image pickup device according to an embodiment of the present invention.

[0247] refer to Figure 29 , Image Pickup Device The image pickup device 200 includes an image pickup unit and a solid-state image pickup device 210 . A light condensing optical unit 202 for forming an image is provided on the light condensing side of the image pickup unit 201 . The image pickup unit 201 is connected to a signal processing unit 203 . The signal processing unit 203 includes a signal processing circuit that drives the drive circuit of the image pickup unit 201 to process a signal that is photoelectrically converted into an image by the solid-state image pickup device 210 . The image signal processed by the signal processing unit 203...

no. 4 example

[0251] Example structure of solid-state image pickup device

[0252] Figure 30 to Figure 32 Each shows a solid-state image pickup device according to a fourth embodiment of the present invention. The solid-state image pickup device of the present embodiment is a four-pixel sharing type MOS solid-state image pickup device, and the four pixels share one floating diffusion region, one amplification transistor, and one selection transistor. Figure 30 is a plan view showing a pixel portion in which a plurality of four-pixel sharing type unit pixel groups are two-dimensionally arranged. Figure 31A with 31B is a view showing a unit pixel group at the center of an image angle of a pixel portion and a unit pixel group at an edge of an image angle. Figure 32 is along Figure 31A Cross-sectional view taken at XXXII-XXXII in .

[0253] Hereinafter, reference numeral 40 denotes a pixel portion, 38 denotes a solid-state image pickup device, 42 denotes a unit pixel group, PD (PD1 to...

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PUM

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Abstract

The invention relates to a solid state image pickup device, a method of manufacturing the same, an image pickup device, and an electronic device. The solid state image pickup device includes a pixel section defined by unit pixels arrayed in line and row directions of a semiconductor substrate. Each of the unit pixels includes a photoelectric transducer that is formed on the semiconductor substrate and converts incident light into a signal charge, a waveguide that is formed above the photoelectric transducer and guides the incident light to the photoelectric transducer, and a microlens that is formed above the waveguide and guides the incident light to an end of light incident side of the waveguide. The waveguide has a columnar body with a constant cross section from the end of light incident side to an end of light exit side, and is arranged such that a center of rays of the incident light incident from the microlens on the end of light incident side of the waveguide is aligned with a central axis of the waveguide.

Description

technical field [0001] The present invention relates to a solid-state image pickup device and a method of manufacturing the solid-state image pickup device, the image pickup device, and electronic devices such as video cameras including the solid-state image pickup device therein. Background technique [0002] The solid-state image pickup device includes, for example, an amplifying solid-state image pickup device typified by a metal oxide semiconductor (MOS) such as a complementary metal oxide semiconductor (CMOS) image sensor. Also, the solid-state image pickup device includes a charge-transfer solid-state image pickup device typified by a charge-coupled device (CCD) image sensor. These types of solid-state image pickup devices are widely used in digital still cameras and digital video cameras. MOS solid-state image pickup devices are commonly used in mobile devices such as camera-equipped mobile phones and personal digital assistants (PDAs) due to their low power supply v...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L27/148
CPCH01L27/14621H01L27/14625H01L27/14641H01L27/14685
Inventor 中田征志伊泽慎一郎山下和芳
Owner SONY CORP
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